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The Kaplan-Meier estimation (KME) (1958) is a popular nonparametric method in analyzing the survival data. Efron (1967) proposes a re-distribution-to-the-right algorithm for right censored data, which can also be re-distributed from right to left by a method of Dinse (1985). We extend the above approaches to include the left censored data and other incomplete observations. Comparisons are made for the three methods: the KME, and the re-distributions by Efron and by Dinse.

With the introduction of ultra-thin gate oxides (GOXs) and low-k dielectrics into IC manufacturing, some new dielectric failure mechanisms arisen. These changes make the evaluations of dielectric reliability more complex. We propose a new method to accurately define the dielectric intrinsic breakdown specification (Spec) of V-ramp (Voltage ramp) tests. Base on the physical failure process and statistical correlation between V-ramp and TDDB (Time Dependent Dielectric Breakdown) tests, the applicability of our proposed method can be further extended to ultra-thin GOX and low-k dielectrics. A quicker and more accurate judgment on dielectric reliability can be achieved by using our method to better assess dielectric reliability risk.