963 results on '"DenBaars, S. P."'
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52. Optical Anisotropy Studies of Sapphire by Raman Scattering and Spectroscopic Transmission Ellipsometry
53. MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode
54. Flow modulation epitaxy of indium gallium nitride
55. InP-based multiple quantum well structures grown with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP): Effects of growth interruptions on structural and optical properties
56. Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission.
57. Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs(100) surfaces
58. High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition
59. Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts.
60. High performance InP JFETs grown by MOCVD using tertiarybutylphosphine
61. Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers
62. GALLIUM NITRIDE BASED SEMICONDUCTORS FOR SHORT WAVELENGTH OPTOELECTRONICS
63. Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1-xN/GaN quantum wells studied with time-resolved cathodoluminescence.
64. High spatial uniformity of photoluminescence spectra in semipolar (2021) plane InGaN/GaN quantum wells.
65. Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\left( {10\overline 1 \overline 1 } \right)$$\end{document} GaN templates
66. Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN
67. Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure
68. Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures
69. Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe
70. Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire
71. Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
72. Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
73. Fabrication and Characterization of GaN Junctionfield Effect Transistors
74. Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures
75. Electrical transport of an AlGaN/GaN two-dimensional electron gas
76. Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions
77. Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides
78. Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
79. Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
80. Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells
81. Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
82. Spectroscopic Studies in InGaN Quantum Wells
83. Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
84. Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates.
85. Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes
86. Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes
87. Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates.
88. Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation.
89. Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures.
90. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition.
91. Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy.
92. Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition.
93. Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells.
94. Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells.
95. Characterization of AlGaN/GaN p-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors.
96. Measurement of second order susceptibilities of GaN and AlGaN.
97. Nonpolar a-plane p-type GaN and p-n Junction Diodes.
98. Refractive index study of Al[sub x]Ga[sub 1-x]N films grown on sapphire substrates.
99. Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells.
100. Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy.
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