51. Dissociation of GaN2+ and AlN2+ in APT: Analysis of experimental measurements.
- Author
-
Zanuttini, D., Blum, I., di Russo, E., Rigutti, L., Vurpillot, F., Douady, J., Jacquet, E., Anglade, P.-M., and Gervais, B.
- Subjects
- *
GALLIUM nitride , *ALUMINUM nitride , *ATOM-probe tomography , *DISSOCIATION (Chemistry) , *MOLECULAR probes - Abstract
The use of a tip-shaped sample for the atom probe tomography technique offers the unique opportunity to analyze the dynamics of molecular ions in strong DC fields. We investigate here the stability of AlN2+ and GaN2+ dications emitted from an Al0.25Ga0.75N sample in a joint theoretical and experimental study. Despite the strong chemical resemblance of these two molecules, we observe only stable AlN2+, while GaN2+ can only be observed as a transient species. We simulate the emission dynamics of these ions on field-perturbed potential energy surfaces obtained from quantum chemical calculations. We show that the dissociation is governed by two independent processes. For all bound states, a mechanical dissociation is induced by the distortion of the potential energy surface in the close vicinity of the emitting tip. In the specific case of GaN2+, the relatively small electric dipole of the dication in its ground 13Σ− and excited 11Δ states induces a weak coupling with the electric field so that the mechanical dissociation into Ga+ + N+ lasts for sufficient time to be observed. By contrast, the AlN2+ mechanical dissociation leads to Al2+ + N which cannot be observed as a correlated event. For some deeply bound singlet excited states, the spin-orbit coupling with lower energy triplet states gives another chance of dissociation by system inter-system crossing with specific patterns observed experimentally in a correlated time of flight map. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF