51. Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon
- Author
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Emanuele Rimini, A. La Ferla, P. K. Giri, Salvo Coffa, G. Galvagno, Vito Raineri, and V. Privitera
- Subjects
Secondary ion mass spectrometry ,Ion implantation ,Photoluminescence ,Materials science ,Silicon ,chemistry ,Spreading resistance profiling ,Annealing (metallurgy) ,Transmission electron microscopy ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Dislocation - Abstract
Low-temperature photoluminescence (PL) spectroscopy, in conjunction with transmission electron microscopy (TEM) and optical microscopy (OM) have been carried out to investigate the origin of radiative recombination from various extended defects that evolve during high-temperature processing of ion-implanted epitaxial silicon. From PL studies on N2-annealed samples, we provide spectroscopic evidence of precipitation of the implanted impurities well below the solid-solubility limit. This result is being supported by observations from secondary ion mass spectrometry and spreading resistance profiling of the implanted ions. Cross sectional TEM analyses on these samples reveal 〈111〉-oriented precipitates located in a region containing a high dislocation density. Postimplantation annealing in oxygen ambient results in the formation of dislocations and oxidation-induced stacking faults (OISF). A systematic analysis of PL spectra on different-implanted and preannealed samples, in conjunction with TEM and OM analy...
- Published
- 2001