295 results on '"Kanemaru S"'
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52. Demonstration of threshold voltage control techniques for vertical-type 4-terminal double-gate MOSFETs (4T-DGFET).
53. Damageless vacuum sealing of Si field emitters with CHF[sub 3] plasma treatment
54. Silicon nanowire memory using surface charging and its operation analysis by scanning Maxwell-stress microcopy (SMM).
55. Single electron memory characteristic of silicon nanodot nanowire transistor
56. Individual tip evaluation in Si field emitter arrays by electrostatic lens projector
57. Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs
58. Charging Damage of SOI Wafer Diagnosed by Scanning Maxwell-Stress Microscopy
59. Effects of conduction type on field-electron emission from single Si emitter tips with extraction gate
60. Optimization of transistor structure for transistor-stabilized field emitter arrays
61. 43.1: Invited Paper: Active-Matrix Field-Emitter Arrays for the Next-Generation FEDs
62. Band-Bending Effects on Field Electron Emission From N- and P-Type Silicon Gated Emitter Tips
63. A field emitter array with an amorphous silicon thin-film transistor on glass
64. Fabrication Of A Nanometer-Scale Si Wire By Micromachining Of A Silicon-on-Insulator Substrate
65. Fabrication Of A Field Emitter Array Monolithically Integrated With Thin-Film-Transistor On Glass
66. Suppressed threshold voltage roll-off characteristic of 40 nm gate length ultrathin SOI MOSFET
67. On estimating the amplitude of Jovian whistlers observed by Voyager 1 and implications concerning lightning
68. Beam focusing characteristics of silicon microtips with an in-plane lens
69. Amorphous-silicon-on-glass field emitter arrays
70. Transforming growth factor [beta]3 for the prevention of vocal fold scarring.
71. Regenerative treatment for tympanic membrane perforation.
72. Prevention of buccal mucosa scarring with transforming growth factor [beta]3.
73. Microscopic characterization of field emitter array structure and work function by scanning Maxwell-stress microscopy.
74. Control of emission characteristics of silicon field emitter arrays by ion implantation technique.
75. Electron beam characteristics of double-gated Si field emitter arrays.
76. A MOSFET-structured Si tip for stable emission current.
77. A novel switching converter simulation algorithm by averaged state transition matrices.
78. Three-Dimensional Vacuum Magnetic Sensor with a Si Emitter Tip.
79. MOSFET-structured Si field emitter tip.
80. Tower structure Si field emitter arrays with large emission current.
81. New structure Si field emitter arrays with low operation voltage.
82. Band-Bending Effects on Field Electron Emission From N- and P-Type Silicon Gated Emitter Tips.
83. Fabrication and characterization of lateral field-emitter triodes
84. Regeneration of aged vocal fold: first human case treated with fibroblast growth factor.
85. Tracheal regeneration after partial resection: a tissue engineering approach.
86. Cranial bone regeneration using a composite scaffold of Beta-tricalcium phosphate, collagen, and autologous bone fragments.
87. Characterization of enhanced field emission from HfC-coated Si emitter arrays through parameter extraction.
88. Damageless vacuum sealing of Si field emitters with CHF3 plasma treatment.
89. 15-nm-thick Si channel wall vertical double-gate MOSFET.
90. Improvement of electron emission characteristics of Si field emitter arrays by surface modification
91. Stable emission from a MOSFET-structured emitter tip in poor vacuum
92. Control of emission currents from silicon field emitter arrays using a built-in MOSFET
93. Highly suppressed threshold voltage roll-off characteristics of the 4 nm-thick SOI n-MOSFETS in the 40-135 NM gate length regime
94. Fabrication of poly-Si TFT controlled FED
95. 15-nm-thick Si channel wall vertical double-gate MOSFET
96. Control of the Initial Stage of Ge Overgrowth on CaF2/Si Structures by Electron Beam Exposure
97. Effective Area of Medium-sized Ships
98. 40 nm gate length ultra-thin SOI n-MOSFETs with a backside conducting layer
99. Fabrication of Si FEA integrated with MOSFET driving circuits
100. Monolithic integration of Si field emitter arrays with n-MOSFET circuits
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