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In this work, we have fabricated a novel electrochemical biosensor based on TiO2/PS. Heterostructure by sol–gel assisted with spin-casting technique. XRD profile showed the tetragonal phase of TiO2 thin films. SEM images observed the nanoporous-like surface morphology. The film has 78 nm of grain size calculated from AFM analysis. The PL spectrum recorded a strong emission peak at 485 nm, 530 nm, and 545 nm due to blue and green emission. The enhancement of the electrochemical reaction was analysed by cyclic voltammetry (CV). The fabricated electrode has shown the sensitive and stable detection of carbohydrates. The more consistent results showed that TiO2/PS electrode is a promising material for the carbohydrates biosensor. Most importantly, the TiO2/PS electrode achieved a correlation between the coefficient (R2) and sensitivity 0.99 and 26 μA mM−1 cm−2 of glucose. Similarly, 0.98 & 16 μA mM−1 cm−2 for sucrose and 0.96 & 11 μA mM−1 cm−2 for starch. [ABSTRACT FROM AUTHOR]

NiCo2S4 is a promising material for use in supercapacitors due to its high conductivity and redox activity. However, its cycling stability is poor due to the structural degradation of the electrode caused by the redox reaction. NiCo2S4 is encased with an ultrathin graphene oxide layer to produce a core/shell structure (NiCo2S4@GO). We present a simple approach for the fabrication of NiCo2S4/graphene composites. With a specific capacitance of 1100 F g−1 and a current density of 1 A g−1, the NiCo2S4@GO composite demonstrates exceptional electrochemical performance. A hybrid supercapacitor assembled using the synthesized NiCo2S4@GO as a positive electrode and porous carbon as a negative electrode demonstrates a high energy density of 26.9 W h kg−1 at a power density of 658 W kg−1 in the voltage range 0–3.5 V. After 10,000 charge/discharge cycles, the device still retains 78% of its initial capacitance. [ABSTRACT FROM AUTHOR]

The present research explores the fabrication of a metal insulator semiconductor Schottky barrier diode (SBD) with rare earth metal oxide (Yb2O3) thin films as insulators that are effectively developed on a large scale using the low-cost jet nebulizer spray pyrolysis technique (JNSP). The Yb2O3 thin films are deposited at various substrate temperatures (350 °C–550 °C) to ascertain its influence on the characteristic properties of the material. The structural, morphological and opto-electrical properties are investigated using various characterization techniques. Here, X-ray diffraction (XRD) analysis revealed the single crystalline cubic crystal structure of Yb2O3 thin films. Field emission scanning electron microscope (FESEM) images show the presence of uniformly distributed cage and globular like structures spread over the entire surface of the Yb2O3 films. The elemental composition study demonstrates the presence of Yb and O. The optical direct energy band gap of Yb2O3 thin films have been analyzed through UV-Visible spectra. Current – voltage measurements were analyzed in dark and light conditions for the Al/Yb2O3/p-Si structured Schottky barrier diodes (SBDs) which are fabricated with interfacial layers at different substrate temperatures. Further, the functionality of the SBDs was tested at different temperatures ranging from 30 °C to 150 °C. The experimental results of all SBDs indicate a linear reduction in the ideality factor (n) up to 2.537 and 2.059 with a slight increase in the effective barrier height (ФB) of 0.789 eV& 0.638 in dark and light conditions, respectively. The SBD fabricated at 550 °C recorded good performance, which will be suitable for thermal dependent electronic device applications. [ABSTRACT FROM AUTHOR]

We report on the fabrication of p-Si/n-CdO and p-Si/n-CdIn2O4 junction diodes using chemically prepared pure CdO and In 5–20 wt.%-doped CdO nanoparticles. The cadmium oxide (CdO) and indium-doped cadmium oxide (ICO) nanoparticles were characterized using x-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy, energy dispersive analysis, high-resolution transmission electron microscopy (HRTEM), UV-Vis analysis, photoluminescence (PL) and electrical conductivity measurements. The strongest orientation along the (111) plane for CdO indicates a fcc crystal system. The average particle size of ICO nanoparticles vary from 26 nm to 41 nm. The FTIR bands for ICO samples at 508–511 cm−1 was strongly remodeled while increasing the doping concentration of In at 15 wt.%. HRTEM revealed a clear spherical morphology ~16.28 nm of average particle size for the ICO with 20 wt.% In. Moreover, a maximum electrical conductivity of 15.084 × 10−10 S cm−1 with higher transmittance range of about 76.11% was achieved. The photosensitivity of the p-Si/n-CdIn2O4 diode varied from 103 to 104 %. Also, high quantum efficiency ~225.92% and specific detectivity 5.1952×1011 Jones were found for p-Si/n-CdIn2O4 photodiode. These outcomes suggest that the developed p-Si/n-CdIn2O4 diode is suitable one in the fabrication of UV photodetector and solar cell devices for electronic communication. [ABSTRACT FROM AUTHOR]

An ultrahigh photosensitive diode was developed using a Cu-doped CeO2 thin film through spray pyrolysis processing, which has made a unique contribution in the field of optoelectronic device fabrication process. Phase identification revealed a good arrangement of atoms in the as-prepared nanostructured thin films via structural analysis. The formation of wire-shaped nanorods was confirmed. Elemental distribution and their valence states were systematically monitored using X-ray photoelectron spectroscopy analysis, where the presence of Ce3+ was evidenced. Good mechanical properties were obtained owing to the Cu-doping in the cerium host matrix, which was investigated by nano-indentation. Bandgap energy fluctuation was the root cause for electrical conductivity. The present work revealed a decrease in the band gap energy upon Cu-doping alters the electrical conductivity. An as-fabricated photodiode demonstrated superior detectability upon Cu-doping. In the depletion region, on account of a high surface-to-volume ratio, the generation of electron–hole pairs increased along with photoresponsivity with increases in the quantum efficiency and current gain. [ABSTRACT FROM AUTHOR]