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Transport properties of polycrystalline (In, Mn)Sb samples are investigated. Behavior of the temperature and magnetic field dependencies of the resistivity, anomalous Hall coefficient and magnetoresistivity at low temperatures points out the influence of Mn complexes, Mn ions and nano- and microsizes MnSb precipitates on charge transport. [ABSTRACT FROM AUTHOR]

The high anisotropy of the critical current density in the high-temperature superconductor YBa2Cu3O6+x can be compensated by changing the pinning landscape, for example, through doping with BaZrO3. We measure the change due to BaZrO3 doping in the effective electron mass anisotropy, γ, by resistive measurements of the upper critical field in pulsed high magnetic fields. It is found that the angular dependence of the upper critical field follows the Blatter scaling up to 30 T but the irreversibility field does not. We also report a significant reduction in the effective electron mass anisotropy from 6.0 to 3.4 by BaZrO3 doping. [ABSTRACT FROM AUTHOR]

We have studied the effect of silicon-enriched vapor phase composition, deposition temperature, and CHSiCl precursor concentration on the microstructure, resistivity, and compressive strength of 3 C-SiC layers and optimized the conditions for the growth of polycrystalline 3 C-SiC layers possessing high resistivity and compressive strength. [ABSTRACT FROM AUTHOR]

Dilute magnetic semiconductors based on manganese-doped Zn0.9Cd0.1GeAs2 solid solution with various doping levels were synthesized. Their Curie point in 5-T magnetic field was 349 K. Ferromagnetic ordering in these semiconductors was due to MnAs nanoclusters, whose sizes were 3.7–3.8 nm. [ABSTRACT FROM AUTHOR]

Single crystals of the solid solutions CdGeAs2:Mn( x) and Cd0.964Zn0.036GeAs2:Mn( x) have been grown by the vertical Bridgman method. An X-ray diffraction study has demonstrated that Cd0.964Zn0.036GeAs2 ( I), Cd0.964Zn0.036GeAs2:Mn (1.5 wt%) ( II), and Cd0.964Zn0.036GeAs2:Mn (2.18 wt %) ( III) retain the CdGeAs2 structure (tetragonal system, space group I $$\bar 4$$ 2 d). The unit cell parameters of the solid solutions are as follows: a = b = 5.934(1) Å, c = 11.219(2) Å for I; a = b = 5.919(1) Å, c = 11.204(2) Å for II; and a = b = 5.918(1) Å, c = 11.208(2) Å for III. Many of Mn atoms in II and III occupy interstitial sites in the crystal lattice. Selected electrical and magnetic properties of single crystals of CdGeAs2:Mn( x) are discussed. [ABSTRACT FROM AUTHOR]

Shubnikov-de Haas (SdH) effect and magnetoresistance measurements of single crystals of diluted II-V magnetic semiconductors (Cd 1-x-y Zn x Mn y ) 3 As 2 (x  +  y  =  0.4, y  =  0.04 and 0.08) are investigated in the temperature range T  =  4.2 ÷ 300 K and in transverse magnetic field B  =  0 ÷ 25 T. The values of the cyclotron mass m c , the effective g-factor g*, and the Dingle temperature T D are defined. In one of the samples (y  =  0.04) a strong dependence of the cyclotron mass on the magnetic field m c (B)  =  m c (0)  +  αB is observed. The value of a phase shift close to β  =  0.5 indicates the presence of Berry phase and 3D Dirac fermions in a single crystals of (Cd 1-x-y Zn x Mn y ) 3 As 2 in one of the samples (y  =  0.08).