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102. First experimental programs with the free electron laser

Author

Margaritondo, G., primary, Coluzza, C., additional, Staehli, J.-L., additional, Tuncel, E., additional, McKinley, J. T., additional, Albridge, R. G., additional, Barnes, A. V., additional, Ueda, A., additional, Yang, X., additional, and Tolk, N. H., additional

Published
1994
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103. First experimental tests at the new synchrotron radiation facility ELETTRA in Trieste

Author

Abrami, A., primary, Alfè, D., additional, Antonini, S., additional, Bernardini, M., additional, Bertolo, M., additional, Bocchetta, C.J., additional, Bulfone, D., additional, Cargnello, F., additional, Darclon, F., additional, Di Fonzo, S., additional, Fontana, S., additional, Galimberti, A., additional, Giannini, M., additional, Jark, W., additional, Massarotti, A., additional, Mazzolini, F., additional, Puglisi, M., additional, Richter, R., additional, Rindi, A., additional, Rosei, R., additional, Rubbia, C., additional, Tommasini, D., additional, Savoia, A., additional, Viani, G., additional, Walker, R.P., additional, Wrulich, A., additional, Coluzza, C., additional, dell'Ortò, Tiziana, additional, Gozzo, F., additional, Margaritondo, G., additional, De Stasio, Gelsomina, additional, Perfetti, P., additional, Gentili, M., additional, Ciotti, M.T., additional, Mercanti, D., additional, and Fonda, L., additional

Published
1994
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106. Free‐electron laser spectroscopy of semiconductors and interfaces

Author

McKinley, J. T., primary, Albridge, R. G., additional, Barnes, A. V., additional, Chen, G. C., additional, Davidson, J. L., additional, Languell, M. L., additional, Polavarapu, P. L., additional, Smith, J. F., additional, Yang, X., additional, Ueda, A., additional, Tolk, N., additional, Coluzza, C., additional, Baudat, P. A., additional, Dupuy, C., additional, Gozzo, F., additional, Iilegems, M., additional, Martin, D., additional, Morier‐Genoud, F., additional, Rudra, A., additional, Tuncel, E., additional, and Margaritondo, G., additional

Published
1994
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108. Spatially resolved X-ray spectroscopy of CsI deposits

Author

Coluzza, C., primary, Almeida, J., additional, Berger, H., additional, Perez, L., additional, Margaritondo, G., additional, Paic, G., additional, Braem, A., additional, Piuz, F., additional, Mauro, A.Di, additional, and Nappi, E., additional

Published
1994
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109. Free-electron lasers and semiconductor physics: first results on nonlinear optics, interfaces, and desorption

Author

McKinley, J.T., primary, Albridge, R.G., additional, Barnes, A.V., additional, Baudat, P.A., additional, Chen, G.C., additional, Coluzza, C., additional, Davidson, J.L., additional, Dupuy, C., additional, Gozzo, F., additional, Illegems, M., additional, Languell, M.L., additional, Martin, D., additional, Morier-Genoud, F., additional, Polavarapu, P.L., additional, Rudra, A., additional, Smith, J.F., additional, Tuncel, E., additional, Yang, X., additional, Ueda, A., additional, Margaritondo, G., additional, and Tolk, N., additional

Published
1994
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115. Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser

Author

Coluzza, C., primary, Tuncel, E., additional, Staehli, J.-L., additional, Baudat, P. A., additional, Margaritondo, G., additional, McKinley, J. T., additional, Ueda, A., additional, Barnes, A. V., additional, Albridge, R. G., additional, Tolk, N. H., additional, Martin, D., additional, Morier-Genoud, F., additional, Dupuy, C., additional, Rudra, A., additional, and Ilegems, M., additional

Published
1992
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124. LUMINESCENCE of STEP-BY-STEP HYDROGENATED GaAs/GaAlAs MQW.

Author

Capizzi, M., Coluzza, C., Frankl, P., Frova, A., Colocci, M., Gurioli, M., Vinattieri, A., Martelli, F., Pavesi, L., and Reinhart, F. K.

Subjects
LUMINESCENCE, HYDROGENATION, PHOTOLUMINESCENCE, QUANTUM wells, SEMICONDUCTORS
Published
1990

138. Surface analyses of In–V oxide films aged electrochemically by Li insertion reactions

Author

Coluzza, C., Cimino, N., Decker, F., Santo, G. Di, Liberatore, M., Zanoni, R., Bertolo, M., and Rosa, S. La

Abstract

The surface of a Li-insertion In–V mixed-oxide electrode and the evolution of its composition and morphology upon prolonged intercalation/deintercalation cycles have been studied by a combination of the following bulk and surface-sensitive analytical techniques: Electrochemical analysis (cyclic voltammetry, impedance spectroscopy), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and scanning photoelectron spectromicroscopy (SPEM). The In–V oxide film, obtained by rf sputtering as a thin film on conductive glass for use as a transparent electrode in electrochromic windows, is a Li-insertion material with good reversibility and high charge capacity, having a surface morphology characterised by a low initial roughness. XPS results showed that Li+-insertion brought about the reduction of V5+ to V4+ and V3+, with the onset of new structures in the valence band, related to the formation of Li2CO3 on the electrode surface. Such chemical changes were largely reversed upon Li-deinsertion and only a barely detectable effect on the surface morphology was seen after up to ten cycles. Extensive Li-charge–discharge cycling induced larger changes in the electrode morphology (increase in grain size and roughness), in the surface composition and microscopic aspect, with a partial passivation effect on the film electrochemical behaviour. The formation of surface deposits with a characteristic, elongated shape has been revealed to occur after 500 Li charge–discharge cycles. Submicron chemical analysis of such deposits onto aged oxide electrodes has been performed by SPEM, which enabled the location and assignment of the surface composition.

Published
2003

139. Surface evolution of Ni–V transparent oxide films upon Li insertion reactions

Author

Zanoni, R., Decker, F., Coluzza, C., Artuso, F., Cimino, N., Santo, G. Di, and Masetti, E.

Abstract

A detailed picture is reported of the nature of an Li insertion Ni–V mixed-oxide electrode and of its evolution upon prolonged intercalation/deintercalation cycles. A combination of bulk and surface-sensitive techniques is used, including electrochemical analysis (cyclic voltammetry, impedance spectroscopy), atomic force microscopy (AFM) and XPS. The Ni–V oxide film, obtained by r.f. sputtering as a thin film on conductive glass for use as a transparent electrode in electrochromic windows, is an Li insertion material with high charge capacity, very good reversibility and a surface morphology characterized by a low initial roughness. Its surface composition shows an initial Ni enrichment. The nominal Ni–V stoichiometry is recovered already after ten cycles. Extended Li charge–discharge cycles induce progressive changes in the electrode reversibility (capacity fading) and in the reaction kinetics (increase of impedance). The surface evolution consists of the progressive accumulation of an Li carbonate layer, with thickness and roughness increasing with the number of cycles. The constancy of the core level and Auger peaks of Ni and V after 100 cycles excludes major changes in the electronic structure of the host oxide. However, electrochemical and AFM experiments performed after 1000 cycles indicate that the carbonate deposition on the electrode progresses further, therefore the surface layer is unable to yield a permanent electrode passivation and stabilization. Copyright © 2002 John Wiley & Sons, Ltd.

Published
2002
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143. Laterally-resolved study of the Au/SiN x/GaAs(100) interface

Author

Almeida, J., Margaritondo, G., Coluzza, C., Davy, S., Spajer, M., and Courjon, D.

Abstract

We report a microscopic study of the Au/5Å SiN x/GaAs Schottky barrier based on scanning near-field optical microscopy. Photocurrent yield microimages taken at different photon energies reveal non-topographic features. Taking into account their dependence on photon energy and bias, such features are consistent with lateral variations of the local density of states related to defects. The results, therefore, confirm that lateral variations must be considered when analyzing semiconductor interfaces and of the corresponding devices.

Published
1998
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144. Electroreflectance and photoluminescence measurement of passivation by hydrogenation in GaAs/AlGaAs structures

Author

Yang, D., Garland, J.W., Raccah, P.M., Coluzza, C., Frankl, P., Capizzi, M., Chambers, F., and Devane, G.

Abstract

We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AlGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximate pinning levels and interace charges of the RTS.

Published
1991
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146. Study of hydrogenation in GaSb/AlSb multiple quantum well structures by time-resolved luminescence.

Author

Capizzi, M., Coluzza, C., Frova, A., Cebulla, U., and Forchel, A.

Subjects
*QUANTUM wells, *LUMINESCENCE, *PHYSICS
Abstract

Continuous and pulsed photoluminescence experiments in GaSb/AlSb multiple quantum wells have been performed before and after exposure to hydrogen. An appreciable increase in the emission efficiency has been observed for H ion doses as low as 1013/cm2. Since the results cannot be accounted for in terms of the plain passivation of nonradiative centers, the effect is ascribed mostly to a change in the mechanism of carrier relaxation within the lower end of the bound-state distribution. [ABSTRACT FROM AUTHOR]

Published
1989
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149. Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a-Si:H diodes by photoemission with synchrotron radiation.

Author

Fortunato, G., D'Amico, A., Coluzza, C., Sette, F., Capasso, C., Patella, F., Quaresima, C., and Perfetti, P.

Subjects
HYDROGEN, SCHOTTKY barrier diodes, PHOTOEMISSION, SYNCHROTRON radiation, VALENCE (Chemistry)
Abstract

The Pd/SiOx/a-Si:H hydrogen sensor has been investigated by photoemission spectroscopy with synchrotron radiation. We measured directly the valence-band discontinuity and the built-in potential during the first stage of formation of the interface obtained by depositing thin amorphous silicon overlayers on Pd/SiOx substrates. Changes of the interface parameters were measured after hydrogen exposure and subsequent hydrogen removal with oxygen. Hydrogen sensitivity is related to hydrogen induced Schottky barrier modulation. [ABSTRACT FROM AUTHOR]

Published
1984
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150. REALISTIC CLUSTER APPROACH FOR INTERPRETING THE VALENCE-BAND STRUCTURE OF PHOSPHORUS OXYANIONS

Author

Cserny, I., Kover, L., Nemethy, A., Adachi, H., Isao Tanaka, Sanjines, R., Coluzza, C., and Margaritondo, G.

Subjects
CALCULATIONS, PO43, ELECTRONIC-STRUCTURE, METAL, X-RAY SPECTROSCOPY, CHEMICAL-STATE ANALYSIS, SPECTRA, SULFUR, OXIDES, MO, CHLORINE
Abstract

The electronic structures of different phosphates were studied by using the DV-X alpha cluster molecular orbital method, Experimental data on crystal structures from x-ray diffraction measurements were used to set up realistic model clusters. Theoretical XPS valence band spectra obtained from the DV-X alpha calculations were compared to our high-resolution XPS measurements on polycrystalline powder Li3PO4, Na3PO4, Na4P2O7 and (NaPO3)(n) samples, These new measurements made possible a more rigorous test of the theoretical approach and more reliable shape analysis than the previous set of data obtained by non-monochromatized measurements combined with the resolution enhancement technique, Systematic study of different clusters showed that the cations around the PO4 cluster and the distortion of the PO4 tetrahedra due to the anisotropic crystal forces play only a minor role and their influence on the valence band spectra was found to be negligible, In the case of polyphosphates, considerable changes were found in the valence band spectra as a consequence of small changes in the bond angle of the P-O-P bridges, Our results, based on cluster parameters specific to the anhydrous crystals, are in good agreement with the experiments.

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