323 results on '"Grossner, Ulrike"'
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102. Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy
103. Temperature Dependence of On-State Inter-Terminal Capacitances (Cgd and Cgs) of SiC MOSFETs and Frequency Limitations of their Measurements
104. Two-dimensional defect mapping of the SiO2/4H-SiC interface
105. Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H -SiC
106. «Das Energiesparpotenzial ist enorm»
107. Towards Full Silicon 4H-SiC Based X-Ray Beam Monitoring
108. Cartographie bidimensionnelle des défauts à l'interface SiO2 / 4H-SiC
109. Hydrothermally Grown Single-Crystalline Zinc Oxide; Characterization and Modification
110. Parasitic Extraction Procedures for SiC Power Modules
111. Analytical Formulas for the Computation of the Electric Field in the Partial Element Equivalent Circuit Method With Conductive, Dielectric, and Magnetic Media
112. Spatially-Resolved Evaluation of Interface Defect Density on Macrostepped SiO2/SiC using Local Deep Level Transient Spectroscopy
113. Two-dimensional defect mapping of the SiO2/4H−SiC interface
114. Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS
115. Surface Morphology of 4H-SiC after Thermal Oxidation
116. SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation
117. Time-Resolved Short Circuit Failure Analysis of SiC MOSFETs
118. Circuit synthesis techniques of rational models of electromagnetic systems: A tutorial paper
119. High-Temperature Impact-Ionization Model for 4H-SiC
120. Silicon carbide X-ray beam position monitors for synchrotron applications
121. Short Circuit Ruggedness of New Generation 1.2 kV SiC MOSFETs
122. Power Cycling of Commercial SiC MOSFETs
123. Continuous Compact Model of a SiC VDMOSFET Based on Surface Potential Theory
124. Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs
125. Effect of Negative Gate Bias on Single Pulse Avalanche Ruggedness of 1.2 kV Silicon Carbide MOSFETs
126. Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs
127. Electromagnetic Modeling Approaches Towards Virtual Prototyping of WBG Power Electronics
128. A more accurate electromagnetic modeling of WBG power modules
129. Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs
130. Exploring the behavior of parallel connected SiC power MOSFETs influenced by performance spread in circuit simulations
131. Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition.
132. 1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time
133. Electrical properties of [Al.sub.2][O.sub.3]/4H-SiC structures grown by atomic layer chemical vapor deposition
134. Thin layer Ag-Sn transient liquid phase bonding using magnetron sputtering for chip to baseplate bonding
135. (Invited) Requirements for Highly Accurate Multiphysics Modeling of SiC Power MOSFETs and Power Modules
136. Highly accurate virtual dynamic characterization of discrete SiC power devices
137. Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
138. Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
139. Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
140. Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
141. Modelling Challenges towards Virtual Prototyping of SiC based Power Modules
142. Al+ ion implanted on-axis <0001>semi-insulating 4H-SiC
143. 4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
144. 1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
145. Al+ Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC
146. SiC Device Manufacturing: How Processing Impacts the Material and Device Properties
147. Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
148. Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
149. Characterization of the SiO2/SiC Interface with Impedance Spectroscopy
150. Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
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