288 results on '"Lin, Chia-Chun"'
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102. Formation of SiGe nanocrystals embedded in Al2O3 for the application of write-once-read-many-times memory
103. Chemical Analysis and Transplacental Transfer of Oseltamivir and Oseltamivir Carboxylic Acid in Pregnant Rats
104. $\hbox{ZrLaO}_{x}\hbox{/ZrTiO}_{x}\hbox{/ZrLaO}_{x}$ Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling Effect
105. Rewiring for threshold logic circuit minimization.
106. Isolation and characterization of lactic acid bacteria from pobuzihi (fermented cummingcordia), a traditional fermented food in Taiwan
107. Strong Tamper-Localization, Visual Secret Sharing Scheme Based on Exploiting Modification Direction
108. Effect of Nitrogen Passivation on the Performance of MIM Capacitors With a Crystalline- $\hbox{TiO}_{2}/\hbox{SiO}_{2}$ Stacked Insulator
109. A novel multi-group exploiting modification direction method based on switch map
110. MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing
111. Integration of Amorphous $\hbox{Yb}_{2}\hbox{O}_{3}$ and Crystalline $\hbox{ZrTiO}_{4}$ as Gate Stack for Aggressively Scaled MOS Devices
112. $\hbox{ZrTiO}_{x}$-Based Resistive Memory With MIS Structure Formed on Ge Layer
113. MIM Capacitors With Crystalline-$\hbox{TiO}_{2}/ \hbox{SiO}_{2}$ Stack Featuring High Capacitance Density and Low Voltage Coefficient
114. Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions
115. Efficacy of intratracheal instillation of a meropenem/perfluorochemical suspension in acute lung injury
116. High-Performance Metal–Insulator-Metal Capacitor Using Stacked $\hbox{TiO}_{2}/\hbox{Y}_{2}\hbox{O}_{3}$ as Insulator
117. MOS devices with tetragonal ZrO2 as gate dielectric formed by annealing ZrO2/Ge/ZrO2 laminate
118. Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer
119. Comparison of Ge Surface Passivation Between $ \hbox{SnGeO}_{x}$ Films Formed by Oxidation of Sn/Ge and $ \hbox{SnGe}_{x}/\hbox{Ge}$ Structures
120. A mutual information based approach for evaluating the quality of clustering
121. Transformation for adults in an Internet‐based learning environment—is it necessary to be self‐directed?
122. High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric
123. Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer
124. Preexisting Antibody Response against 2009 Pandemic Influenza H1N1 Viruses in the Taiwanese Population
125. Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer
126. Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO4 film
127. Microbiological Characteristics of Community-Associated Staphylococcus aureus Causing Uncomplicated Bacteremia and Infective Endocarditis
128. Oral Bioavailability, Urinary Excretion and Organ Distribution of Melamine in Sprague−Dawley Rats by High-Performance Liquid Chromatography with Tandem Mass Spectrometry
129. Clinical Features of Children Infected With Different Strains of Influenza B in Southern Taiwan
130. A 242mW, 10mm 2 1080p H.264/AVC high profile encoder chip
131. A 242mW 10mm2 1080p H.264/AVC High-Profile Encoder Chip
132. Hardware Efficient Skip Mode Detection for H.264/AVC
133. Application of Rat In Situ Single-pass Intestinal Perfusion in the Evaluation of Presystemic Extraction of Indinavir Under Different Perfusion Rates
134. PMRME: A Parallel Multi-Resolution Motion Estimation Algorithm and Architecture for HDTV Sized H.264 Video Coding
135. TiO2-based MIM capacitors featuring suppressed leakage current by embedding Ge nanocrystals.
136. Simplified ZrTiO-based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.
137. A Fast Algorithm and Its Architecture for Motion Estimation in MPEG-4 AVC/H.264 Video Coding
138. A 242mW, 10mm21080p H.264/AVC high profile encoder chip.
139. Formation of amorphous Yb2O3/crystalline ZrTiO4 gate stack and its application in n-MOSFET with sub-nm EOT.
140. Excluded Volume Model for the Reduction of PolymerDiffusion into Nanocomposites.
141. Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiO x -based metal–insulator-metal devices.
142. Do Attractive Polymer–Nanoparticle InteractionsRetard Polymer Diffusion in Nanocomposites?
143. MOS Devices With High-κ (ZrO_2) _x(La _2O_3) 1-x Alloy as Gate Dielectric Formed by Depositing ZrO _2/La_2O _3/ZrO_2 Laminate and Annealing.
144. Stepwise Evolution of Photocatalytic Spinel-Structured (Co,Cr,Fe,Mn,Ni) 3 O 4 High Entropy Oxides from First-Principles Calculations to Machine Learning.
145. In vitroand in vivoMethods to Measure the Ceftriaxone Distribution into the Rat Tail Intervertebral Disc
146. Surface Passivation of Ge MOS Devices by SmGeO\bf{x} With Sub-nm EOT.
147. One-Time Programmable Memory Based on ZrTiOx Antifuse for Crossbar Memory Application Featuring High Speed Operation and Low Power Consumption.
148. MIM Capacitors Based on ZrTiOx/\rm BaZry\rm Ti1-y\rm O3 Featuring Record-Low VCC and Excellent Reliability.
149. Improved Leakage and Reliability for ZrLaOx/ZrTiOx/ZrLaOx-Based MIM Capacitors by Plasma Nitridation.
150. \ZrLaOx\/ZrTiOx\/ZrLaOx Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling Effect.
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