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Abstract: A new artificial receptor 1 was developed, and its chromogenic and fluorogenic behaviors toward various metal ions were investigated. Receptor 1 shows exclusively responses toward Hg2+ and Cu2+ ions. It selectively senses Hg2+ and Cu2+ ions through two different color changes in aqueous solution (DMSO/H2O=4/1) and also distinguishes them from other metal ions. In addition, receptor 1 also exhibits pronounced enhancements of the fluorescence, which can visually be discernible by an orchid fluorescence in the presence of Hg2+ ions and a strong blue fluorescence in the presence of Cu2+ ions. [Copyright &y& Elsevier]

Recent research found that fine‐tuning pre‐trained models is superior to training models from scratch in just‐in‐time (JIT) defect prediction. However, existing approaches using pre‐trained models have their limitations. First, the input length is constrained by the pre‐trained models.Secondly, the inputs are change‐agnostic.To address these limitations, we propose JIT‐Block, a JIT defect prediction method that combines multiple input semantics using changed block as the fundamental unit. We restructure the JIT‐Defects4J dataset used in previous research. We then conducted a comprehensive comparison using eleven performance metrics, including both effort‐aware and effort‐agnostic measures, against six state‐of‐the‐art baseline models. The results demonstrate that on the JIT defect prediction task, our approach outperforms the baseline models in all six metrics, showing improvements ranging from 1.5% to 800% in effort‐agnostic metrics and 0.3% to 57% in effort‐aware metrics. For the JIT defect code line localization task, our approach outperforms the baseline models in three out of five metrics, showing improvements of 11% to 140%. [ABSTRACT FROM AUTHOR]

In this paper, an equi-section division method utilizing the symmetry property and amplitude approximation of a sinusoidal waveform to design a direct digital frequency synthesizer (DDFS) is proposed. The sinusoidal phase of a onequarter period is divided into equi-sections. The error value between each line segment value and the sinusoidal amplitude value is stored in a read-only memory (ROM) to reconstruct the real sinusoidal waveform. The upper/lower bound of the maximum error value stored in error-compensation ROM will be derived to determine the minimum required memory wordlength relative to the bit number of the equi-sections. In addition, the minimum size of the total ROMs can be computed according to the bit number of the equi-sections. Thus, the equi-section division method is implemented on a field programmable gate array (FPGA) development board. As a result, the total compression ratio of the DDFS using the equisection division method is superior to that of the DDFS using the traditional compression methods. The simulation and experimental results show that the proposed ROM compression method can effectively achieve a better compression ratio and lower complexity, compared with the DDFS using the traditional compression methods, without affecting the spectrum performance. [ABSTRACT FROM AUTHOR]

Abstract: Electrical properties of RF sputtered ZrO2 memory thin films were investigated in this study. The device with structure Al/ZrO2/Pt shows a reproducible resistive switching behavior traced over 100 times at room temperature. Moreover, by using various top electrodes, such as Pt, Cu, Ni, Ag, Ti, and even W-probe, the resistive switching phenomenon can be observed in ZrO2-based memory with Pt bottom electrode, indicating that the ZrO2 bulk dominates the resistive switching. The bias polarity dependent resistive switching behavior is demonstrated in the Ti/ZrO2/Pt device, which might be due to interface reaction between Ti and ZrO2 film. The resistance value of high conductive state in the Ti/ZrO2/Pt device decreases with increasing current compliance implying the possibility for multi-bit storage. Besides, the Ti/ZrO2/Pt device can be operated over 2000 resistive switching cycles at 85 °C by sweeping DC voltage, and the two memory states demonstrate good stability under read voltage stress at room temperature and 85 °C. The write-read-erase-read operations can be over 103 cycles at 85 °C. No data loss is found upon successive readout before and after performing 103 endurance cycles at 85 °C. According to above experimental results, the ZrO2 thin film has high potential for nonvolatile memory application. [Copyright &y& Elsevier]