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151. 3DVLSI with CoolCube process: An alternative path to scaling

156. The light curve of SN 1987 A

159. Hypernovae as possible sources of Galactic positrons

160. Reexamination of the Re-187 bound on the variation of fundamental couplings

161. Study of the piezoresistive properties of NMOS and PMOS Ω-gate SOI nanowire transistors: Scalability effects and high stress level

162. Dual-channel CMOS co-integration with Si NFET and strained-SiGe PFET in nanowire device architecture featuring sub-15nm gate length

163. A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies

164. New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI

166. High mobility w-gate nanowire P-FET on cSGOI substrates obtained by Ge enrichment technique

167. nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines

168. Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs

169. FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration

171. Low temperature junction formation by solid phase epitaxy on thin film devices: Atomistic modeling and experimental achievements

177. The Compton Cube

178. Constraints on $\Omega_b$ from nucleosynthesis of $^7$Li in the standard big bang model

179. Gamma-ray line emission from $^7$Li and $^7$Be production by cosmic-rays

180. Plasmas et physique nucleaire

181. Gate-last integration on planar FDSOI MOSFET: Impact of mechanical boosters and channel orientations

182. Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations

184. ADVANCED SOLUTIONS FOR MOBILITY ENHANCEMENT IN SOI MOSFETS

188. Gamma-ray lines of carbon and oxygen from orion

191. Comparison between <100> and <110> oriented channels in highly strained FDSOI pMOSFETs

194. Strained tunnel FETs with record ION: first demonstration of ETSOI TFETs with SiGe channel and RSD

195. Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10nm Width

196. Efficiency of mechanical stressors in Planar FDSOI n and p MOSFETs down to 14nm gate length

197. Improvements in low temperature (&#60;625°C) FDSOI devices down to 30nm gate length

199. Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width

200. First demonstration of ultrathin body c-SiGe channel FDSOI pMOSFETs combined with SiGe(:B) RSD: Drastic improvement of electrostatics (Vth,p tuning, DIBL) and transport (μ0, Isat) properties down to 23nm gate length

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