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In some multiple myeloma cases, symptoms of amyloidosis are exhibited more prominently than symptoms of multiple myeloma. These cases are believed to have poorer prognosis compared to those in whom the major symptom is not amyloidosis. On the other hand, the prognosis of patients in whom amyloidosis is associated with peripheral neuropathy is poor, and suitable therapeutics has not been established. In this paper, we report a case of severe orthostatic hypotension as the major symptom associated with systemic amyloidosis. The patient was treated with bortezomib followed by autologous peripheral blood stem cell transplantation. This case was rare in that after relapse; amyloid protein was deposited in different organs, resulting in treatment resistance.

We propose the hotpress method as a novel fabrication process of flexible sheet electronic devices. This process has the same advantages with the printing processes. And also, “solvent free” and “crystallization of organic semiconductor” are the additional advantages of this process. Sufficient crystallization of organic semiconductor contributes to the device performance, and no solvent emission provides a low environmental load process. Legal control on solvent emission will be overcome by this process. The low energy and no solvent emission process will also lead to not only the factory manufacturing but also the personal production of flexible sheet electronic devices in the future.

Optical and electrical changes in several kinds of organic films after ion implantation were investigated. Vacuum evaporated organic films were irradiated by 30-100 keV N + ion beam. The ion dose was varied from 10 14 to 10 16 ions/cm 2 . The surface resistivity varies 9 orders of magnitude from the order of 10 17 ohm/ □ to 10 8 ohm/ □. Furthermore, the film color changes to dark brown with increasing dose, and main optical absorption peaks of the organic molecule itself decreased. The electrical and optical changes by ion implantation seem to reflect chemical elements and physical properties of these films originated from the molecular structure. Furthermore, the large increase in conductivity by ion beam irradiation is due to the formation of carbon clusters in the organic films. These experimental results suggest that the modification of optoelectric properties and three dimensional wiring in organic films by ion implantation are promising techniques for molecular electronic devices.

The orientations of TTF-TCNQ films co-evaporated onto several kinds of organic buffer layers were investigated. The c*-axis of TTF-TCNQ was normal to the substrates. However, the direction of the b-axis was random on CaF2 and cadmium-stearate LB film deposited CaF2 substrates. The b-axis of TTF-TCNQ evaporated on polytetra- fluoroethylene (PTFE) rubbing layer arranged across the rubbing direction, but the film contained many grooves due to PTFE rubbing. TTT-TCNQ films on calcium-stearate/PTFE buffer layer had flat surface, even though the degree of the b-axis orientation was not high.

Polarization-resolved photoluminescence (PPL) measurements were performed to investigate the origin of the PL peaks of InAs/GaAs quantum well structures grown on variously oriented GaAs substrates. PL peaks around 1.37 eV show strong dependence on polarization. The results demonstrate that the PL polarization is mainly due to the quantum structures in tetrahedral three-dimensional microstructures formed on the sample surface.

Surface morphologies and photoluminescence (PL) spectra of the InAs/GaAs thin layer structures show the obvious dependence on substrate orientation. In addition, the structures grown on non-(100) substrates show a strong dependence on flux ratio, InAs layer thickness, and growth temperature. In particular, PL spectra and surface morphologies of (211)A specimens grown under several conditions show not only quantum well (QW) features but also three-dimensional microstructure ones. The results suggest that well defined layer-by-layer growth and three-dimensional growth can be controlled by changing the V/III flux ratio and growth temperature.

Field-effect transistors (FETs) using charge-transfer (CT)-complex Langmuir-Blodgett (LB) films were fabricated and their FET characteristics were measured. Four-layer (2 bilayers), 3-layer (a bilayer and a monolayer) and monolayer of Y-type TMPD-CnTCNQ LB films were examined as active layers of the FET. The FET characteristics strongly depended on the number of CT-complex layers. The monolayer FET showed the highest dependence of drain-source current (IDS) on gate voltage (VG) although the film was the least conductive among the three. Elimination of bilayer units, of which the structure is symmetric against the substrate normal, was concluded to be essential for improving the VG dependence. The cutoff frequency of the CT-complex FET was estimated to be 5 Hz.

Hepatitis C virus (HCV) is one of the viruses known to cause hepatic cancer. HCV is also believed to be involved in malignant lymphoma. In this paper, we investigated characteristics of malignant lymphoma cases that were anti-HCV antibody (HCV-Ab) positive. We were able to perform pathological examinations on 13 out of 14 HCV-positive cases. Of these, lymphoid tissues of 10 stained positive for HCV-Ab. There was no significant correlation between the degree of HCV staining and the rate of recurrence or resistance to treatment. However, there did appear to be a consistent decrease in the amount of HCV-RNA between pre- and posttreatment among HCV-Ab-positive cases; that is, treatment-resistant cases that exhibited resistance from the first treatment and recurrent cases more frequently had a higher HCV level at treatment termination compared to the pretreatment level. This suggests that the HCV virus either accelerates oncogenesis by direct interaction with B cells or indirectly affects lymphoma prognosis.

This chapter examines the current status of the internationalization of Japanese universities by focusing on the multiplicity of its connotations and practices from a Japanese socio-historical perspective. First, it conceptualizes university internationalization and introduces emerging phenomena in the internationalization of Japanese universities. It then illustrates what we name ‘stratified diversification’ of university internationalization, by presenting a categorical model of five distinctive approaches of Japanese universities toward internationalization (global, innovative, ad hoc, pseudo-international, and no-international). The model highlights the multiple yet stratified modes of internationalization practices, with each approach based upon different rationales and facing different problems and issues at stake. Finally, the chapter concludes with a brief discussion on the implications of the model for future research and development of Japanese higher education.

The effects of annealing InAs/GaAs multiple quantum well structures grown by molecular beam epitaxy on variously oriented substrates have been investigated by means of photoluminescence (PL) spectroscopy. PL properties of specimens are found to be strongly dependent on annealing temperature and substrate orientation. The annealing temperature dependence of the emission lines made possible the assignment of the origin of these radiative recombination processes as well as the alloying process involved during the heat treatment. Further, the broad peaks at the lower-energy side show a blue-shift with increase of the annealing temperature, suggesting that dislocations or defects play a principal role in the inter-diffusion of the atoms at the hetero-interface.

We have investigated thermal oxidation of silicon, and dry and wet etching characteristics of the oxide layer after N+ (Ar−) ion implantation and subsequent annealing. An oxidation resistance is observed in the N+ implanted silicon with doses more than 1 × 1015 N+ /cm2. The etch rate of the oxide layer in a diluted HF solution is enhanced with a dose of 1 × 1015 N+ / cm2, whereas an etching resistance is observed for the samples with doses more than 2 × 1015 N+ /cm2. However, only the etching resistance appears in the dry etching. These resistances are also observed by argon implantation and easily removed by subsequent annealing. These results indicate that the oxidation and etching resistances are related to a thin oxynitride formation and the surface modification by ion implantation.

The formation of carbon clusters in ion implanted organic films was examined by electrical conductivity and optical absorption measurements. The surface resistivity of the films decreased by seven orders of magnitude after the ion implantation. The main optical absorption peaks of the film decreased gradually with increasing ion dose, and the absorption profile of the film was changed into a broad and monotonical one. Ion implanted polyethylene films had strong peaks at shorter wavelengths in the absorption spectrum. These results demonstrate that carbon clusters containing fullerenes (C60, C70) were created in organic films by ion implantation.

東日本の皮膚科4施設でテルビナフィンに抵抗性のカンジダ症8例を経験した。白癬に対しテルビナフィンを内服していた6例で指間カンジダ症や陰部カンジダ症を生じた。また指間カンジダ症と肛囲カンジダ症の各1例でテルビナフィンを外用したが難治だった。これらのカンジダ症は,イミダゾール系の抗真菌剤を外用することにより改善した。山形市立病院済生館と水戸済生会総合病院の計6例でカンジダに対するMICを測定したところ50から100μg/ml以上であった。上記のテルビナフィン抵抗性カンジダ症は,山形市立病院済生館のテルビナフィン内服例の約10%にみられた。

IR and inelastic electron tunneling spectroscopy (IETS) techniques are employed to investigate adsorption Langmuir-Blodgett monolayers deposited on silicon substrate with a thin SiO2 film. Merocyanine dye (MC) and crystal violet (CV) are used as a spreading material and an adsorption dye from an aqueous subphase, respectively. IR and IETS data show that the carboxyl group in the MC molecule and the substituent group in the CV molecule are concerned with the adsorption mechanism.

We have grown InAs/GaAs strained-layer quantum structures (SLQSs) on variously oriented GaAs substrates by molecular beam epitaxy to examine the possibility of devices with self-constructed microstructures. Three-dimensional nucleation and defects originated from large lattice mismatch in InAs/GaAs SLQSs have been evaluated by various measurements, such as X-ray diffraction, photoluminescence and photoconductivity. The critical points as functions of growth temperature and substrate orientation for the generation of 3D nuclei, misfit dislocations and defects are discussed.

The effects of organic buffer layers consisting of Langmuir-Blodgett (LB) monolayers on the film growth of organic materials were investigated. Tetracyanoquinodimethane (TCNQ) was vacuum-evaporated onto the LB monolayers formed on silicon and glass substrates. The crystallinity and molecular orientation in the evaporated films were analyzed by using X-ray diffraction measurement. These results revealed that the organic buffer layer using LB films strongly affects the orientation of the TCNQ molecules, and the LB films are suitable materials to use for investigating the growth mechanism in relation to the interaction between evaporated molecules and the organic buffer layer.

We fabricated the photo-spectral sensitivity controllable cells with a multi-layered structure of organic dyes and investigated the photoelectrical properties. The photocurrent spectra of these cells shows high sensitivity in the visible spectral range, and the spectral sensitivity can be controlled by the bias voltage. These phenomena can be explained by the field-dependent and wavelength-dependent quantum efficiency of the organic dye layers.

An optical fiber sensor for albumin detection has been fabricated and tested. The adsorption Langmuir–Blodgett (LB) method was employed to form organic thin films on the optical fiber. The spectral change can be monitored by the interaction between the evanescent light from the fiber core and the adsorption LB films. A relatively high sensitivity and linear relationship between the spectral change and the albumin concentration were obtained.

PROBLEM TO BE SOLVED: To provide a vertical type organic transistor at a low cost wherein high operational speed and high power are realized and mass production is enabled with superior reproducibility. SOLUTION: In the vertical type organic transistor wherein a source electrode 2, a first organic semiconductor layer 3, a gate electrode 4 of a comb type or a mesh type, a second organic semiconductor layer 5, and a drain electrode 6 are formed in order, the first organic semiconductor layer 3 and the second organic semiconductor layer 5 are constituted by using different organic semiconductor material, so as to form a potential barrier on an interface of the first layer 3 and the second layer 5. The potential barrier is generated by potential energy difference of the organic semiconductor material. For example, the potential barrier can be formed by constituting the first layer 3 and the second layer 5 of the same conductivity type organic semiconductor material, or can be formed by constituting the layers 3, 5 of different conductivity type organic semiconductor material. COPYRIGHT: (C)2004,JPO

Vertical type organic light emitting transistors (OLETs), which combined with the organic static induction transistors (OSITs) as the vertical type organic transistors and conventional organic light emitting diodes (OLEDs), are promising for flexible sheet displays. In our recent research, pentacene based OSITs fabricated on flexible plastic substrates exhibited stable electrical characteristics under bending condition. However, several problems have remained in the OSITs with low on/off ratio and low current value for use in the vertical type OLETs. This paper describes our recent efforts to improve the performance of vertical type OLETs by optimizing the device structure and organic materials used in the OSITs. Interface between organic source electrode and semiconductor is important factor to control the device operation of vertical type organic transistors. CuPc layer was inserted between ITO source electrode and pentacene film in order to improve the performance of OSITs. The results showed that both the high on/off ratio more than 103 and the high current value of larger than 40 μA were achieved. In addition, vertical type OLET and logic devices were fabricated using the OSITs for the realization of flexible sheet displays. These results exhibit that the OSITs attract attention for application in organic flexible displays.

Reactions of substituted acetone derivatives with acrylic acid esters (>200 mol %) in the presence of t-BuOK (200 mol %) in t-BuOH-THF (1:1 by volume) turned out to proceed as a cascade process consisting of the first Michael addition, the second Michael addition, and the last Claisen reaction to afford 4,4-disubstituted cyclohexane-1,3-diones. Only more substituted enolates play the role of a Michael donor in this cascade process, and therefore the ketone took up two alkoxycarbonylethyl groups on the same carbon bearing more substituents. Such intermediates were followed by intramolecular Claisen reactions leading to cyclohexane-1,3-diones bearing quaternary stereogenic centers at C(4), which bears an alkoxycarbonylethyl group and the substituent of the starting acetone derivatives. Thus-obtained 4,4-disubstituted cyclohexane-1,3-diones were successfully employed for total syntheses of intricate alkaloids of biological interest such as (+)-aspidospermidine, (±)-galanthamine, (±)-lycoramine, and (±)-mesem...

Organic conducting and semiconducting materials are promising as thermoelectric conversion materials in flexible and wearable electronics because they have large Seebeck coefficients and small thermal conductivities. Since there have been only a limited number of studies on the thermoelectricity of organic materials to date, precise evaluation of Seebeck coefficient and electrical conductivity of various organic conducting/semiconducting thin films is important to examine what kind of material is the most effectual. To carry out such experiments, a specially designed instrument for organic thin films has been developed. Its ability to measure Seebeck coefficients of highly resistive materials was confirmed and Seebeck coefficients and power factors of several typical organic functional materials were preliminary evaluated.

Microstructures formed in InAs/GaAs multiple quantum well structures grown on variously oriented GaAs substrates have been investigated. Details of structure and the optical properties of the microstructures are evaluated by X-ray diffraction and low temperature photoluminescence measurements. Results show the formation of the microstructure depending on the substrate orientation and growth conditions.

InAs/GaAs strained-layer superlattices (SLSs), grown by molecular-beam epitaxy on variously oriented GaAs substrates, have been investigated. X-ray diffraction and photoluminescence (PL) studies reveal the formation of coherent SLS and microstructures due to the three-dimensional nucleation is strongly dependent on the substrate orientation and the growth parameters. The relationship between PL spectra and growth modes and potential applications of self-aligned microstructures, including quantum pyramids, are described.

A novel fabrication technique for making plastic electronics has been developed by applying an ultrasonic welding method that is already widely used in cutting, molding, and joining plastic sheets and parts for many industrial products. One major use of ultrasonic welding is the assembly of blood transfusion bags and other medical supplies, because the inert plastic parts can be joined and sealed without any adhesive agent and within a very short processing time. In this study, the same method is applied to make plastic electronics. The successful fabrication of organic TFTs is shown without affecting the gate insulator layer and the self-assembled monolayer (SAM) of pentafluorobenzenethiol (PFBT). We therefore demonstrate that ultrasonic welding can also be used to fabricate plastic electronics. Using this process, for example, one could add electronic functionality not only on the surface of a blood transfusion bag, but also in or through the welding margin at the fringe of the bag.

Ambipolar carrier conduction has been observed in a metal-insulator-semiconductor field-effect transistor made using (BEDT-TTF)(TCNQ) crystals. The temperature dependence of the source current with the applied positive gate voltage exhibits metal-like behavior at around room temperature. The metal-like conduction transforms into thermal-activation-type behavior below $240\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The ${I}_{\mathrm{S}}\text{\ensuremath{-}}{V}_{\mathrm{DS}}$ curve for an applied gate voltage of $80\phantom{\rule{0.3em}{0ex}}\mathrm{V}$ exhibited a corresponding change in the curvature below $240\phantom{\rule{0.3em}{0ex}}\mathrm{K}$.

There have been various reports on the association of hepatitis C virus (HCV) infection with B lymphocyte proliferative disorders, such as non-Hodgkin lymphoma (NHL). We experienced a case (Case 1) of anti-HCV antibody (HCV-Ab)-positive NHL in which HCV nonstructural protein 3 (NS3) expression was observed in lymphoma tissue at the time of recurrence and in which the serum HCV RNA level exhibited a transient increase prior to recurrence. We investigated the HCV RNA genome in lymphoma tissue in Case 1, and it could be detected at recurrence. We also investigated HCV NS3 protein expression in lymphoma tissue and changes in serum HCV RNA level during the clinical course in four other cases of HCV-Ab-positive NHL treated in our hospital. We examined lymphoma tissues for HCV NS3 protein expression in four of the five cases, but it was not identified except for in Case 1 at recurrence. In three cases with no recurrence, serum HCV RNA levels showed a tendency to decrease after completion of chemotherapy and became stable thereafter. Further studies are necessary to clarify the association between serum HCV RNA and the onset and exacerbation of NHL.

Zinc oxide (ZnO) nanowires (NWs) are grown on fluorine-doped tin oxide (FTO) glass substrates via a simple reactive evaporation method without the presence of any catalysts or additives. The ZnO NWs show high crystallinity and preferential elongation along the c-axis of the hexagonal wurtzite crystal structure. The highly crystalline NWs as electron transporting layer have been used to fabricate the CH3NH3PbI3 perovskite solar cells and their photovoltaic performance were investigated. In this report, we studied the effect of filtration of PbI2-solution on surface morphology of CH3NH3PbI3 layer. Spin-coating of the filtered PbI2-solution leads to a better crystallization and relatively homogenous coverage of the CH3NH3PbI3 film, resulting in an enhancement of the solar cell efficiency compared to the cell fabricated using non-filtrated PbI2-solution. By synthesizing the CH3NH3PbI3 film using filtrated PbI2-solution, we achieved the best power conversion efficiency of 4.8% with a current density of 7.6 mA cm−2, the open circuit voltage of 0.79 V and fill factor of 0.63.

The electronic structure of pentacene/graphite, pentacene/Cu-phthalocyanine (CuPc)/graphite, and $\text{pentacene}∕\mathrm{Si}{\mathrm{O}}_{2}∕\mathrm{Si}(100)$ was studied by ultraviolet photoelectron spectroscopy as a function of the thickness of the pentacene film. We observed that the binding energy position of the highest occupied molecular orbital (HOMO) of pentacene becomes significantly lower on CuPc and $\mathrm{Si}{\mathrm{O}}_{2}$ surfaces than that on graphite. Furthermore, a splitting of the UPS band was observed only for the HOMO of thicker crystalline films on CuPc and $\mathrm{Si}{\mathrm{O}}_{2}$ surfaces, where the molecules are oriented with their long axis nearly perpendicular to the substrate surface. The splitting is ascribed to the intermolecular band dispersion, and the decrease in the threshold ionization energy on CuPc and $\mathrm{Si}{\mathrm{O}}_{2}$ surfaces originates from the HOMO-band dispersion as well as the increase in the relaxation/polarization energies, which may be caused by the better molecular packing structure with a nearly standing molecular orientation.

We propose a new type organic light emitting transistor (OLET) combining static induction transistor (SIT) with double hetero junction type organic light emitting diodes (OLED) using n-type zinc oxide (ZnO) films which works as a transparent and electron injection layer. The device characteristics of newly developed OLED and ZnO-SIT showed relatively high luminance of about 500 cd/m 2 at 7.6 mA/cm 2 and is able to control by gate voltage as low as a few volts, respectively. The crystal structures of the ZnO films as a function of Ar/O 2 flow ratio and the basic characteristics of the thin film transistor (TFT) and SIT depending on the ZnO sputtering conditions are investigated. The results obtained here show that the OLET using ZnO film is a suitable element for flexible sheet displays.