151. Silicon-On-Insulator Devices
- Author
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F. Balestra, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Latch and Breakdown ,Tunnel FET ,Integrated circuit ,02 engineering and technology ,Hardware_PERFORMANCEANDRELIABILITY ,01 natural sciences ,7. Clean energy ,Short Channel Effects ,law.invention ,Strained Channels ,law ,SIMOX ,0202 electrical engineering, electronic engineering, information engineering ,Threshold Voltage ,Self-Heating ,Electronic circuit ,010302 applied physics ,Transient Effects ,Transistor ,Partially Depleted SOI ,Nanoelectronics ,FinFET ,Optoelectronics ,Fully Depleted SOI ,Ground-Plane ,Inversion-Mode MOSFET ,Double-Gate ,Materials science ,Silicon ,Driving current ,Nanowire ,Silicon on insulator ,chemistry.chemical_element ,Nanotechnology ,SOI Materials ,Multi-Channels ,Quantum Effects ,Accumulation-Mode MOSFET ,Silicon-On-Insulator ,Subthreshold Swing ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,Variability ,Multi-Gate ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Kink Effect ,business.industry ,020208 electrical & electronic engineering ,020206 networking & telecommunications ,Gate-All-Around ,Wafer Bonding ,High k and Low k Dielectrics ,Semiconductor ,chemistry ,Hot-Carrier Effects ,Influence of Temperature ,Smart Cut ,business ,Noise ,Hardware_LOGICDESIGN - Abstract
International audience; Silicon On Insulator-based devices seem to be the best candidates for the ultimate integration of Integrated Circuits on silicon. An overview of the main SOI materials and advantages of SOI for the Nanoelectronics of the next decades is presented. Nanoscale CMOS, emerging and beyond-CMOS nanodevices, based on innovative concepts, technologies and device architectures, are addressed. The flexibility of the SOI structure and the possibility to realize new architectures allow to obtain optimum electrical properties for both low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are investigated in single- and multi-gate/multi-channel inversion- or accumulation-mode thin film MOSFETs, realized on various semiconductors (Si, Ge, III-V, CNT), down to sub-10 nm gate length. The impact of strains in the channel and of high k materials is discussed. The interest of advanced emerging and beyond-CMOS nanodevices on SOI for long term applications, based on nanowires or small slope switch structures is also highlighted. The influence of key device parameters on electrical and thermal floating body effects, short channel and quantum effects, noise, variability, as well as on hot carrier effects, versus temperature, is shown for various device architectures.
- Published
- 2014