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374 results on '"Nohira, H."'

153. Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400°C

Author

Nohira, H., Kuroiwa, T., Nakamura, M., Hirose, Y., Mitsui, J., Sakai, W., Nakajima, K., Suzuki, M., Kimura, K., Sawano, K., Nakagawa, K., Shiraki, Y., and Hattori, T.

Subjects
*PHOTOSYNTHETIC oxygen evolution, *PHOTOELECTRON spectroscopy, *MOLECULAR orbitals, *MOLECULAR spectroscopy
Abstract

Abstract: The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si0.7Ge0.3 using atomic oxygen at 400°C was studied with the aid of angle-resolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si0.7Ge0.3 layer at 720°C; (2) when the entire Si layer was oxidized, 1.8% of the Si layer remained in the SiO2 in the form of Si0.7Ge0.3 alloy; and (3) an abrupt compositional transition took place at the SiO2/SiGe interface. [Copyright &y& Elsevier]

Published
2004
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154. Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer

Author

Nohira, H., Shiraishi, T., Takahashi, K., Hattori, T., Kashiwagi, I., Ohshima, C., Ohmi, S., Iwai, H., Joumori, S., Nakajima, K., Suzuki, M., and Kimura, K.

Subjects
*SPECTRUM analysis, *ELECTRON spectroscopy, *PHOTOELECTRON spectroscopy, *MOLECULAR orbitals
Abstract

The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. [Copyright &y& Elsevier]

Published
2004
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155. Chemical and electronic structures of Lu2O3/Si interfacial transition layer

Author

Nohira, H., Shiraishi, T., Nakamura, T., Takahashi, K., Takeda, M., Ohmi, S., Iwai, H., and Hattori, T.

Subjects
*PHOTOELECTRONS, *SILICON
Abstract

The composition of transition layer (TL) formed between Lu2O3 and Si(1 0 0) substrate was determined non-destructively by applying newly developed depth profiling method to the angle-resolved Si 2p and Lu 4d photoelectron spectra. The conduction and valence band alignments of Lu2O3 with respect to Si(1 0 0) were also determined from the measurement of O 1s photoelectron spectra and valence band spectra. [Copyright &y& Elsevier]

Published
2003
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157. Valence charges for ultrathin SiO2 films formed on Si(100)

Author

Hirose, K., Kihara, M., Okamoto, H., Nohira, H., Ikenaga, E., Takata, Y., Kobayashi, K., and Hattori, T.

Abstract

We measure the relative chemical shift between Si 1s and Si 2p, ?E31- ?E02, for 0.20?1.96-nm-thick SiO2 films formed on Si substrates using high-resolution high-energys x-ray radiation. It is found that ?E31 - ?E02 is independent of SiO2 film thickness for films thicker than 1.0?nm, whereas it is smaller for films thinner than 0.5?nm. The result, in conjunction with first principles molecular orbital calculations, indicates that the valence charge of the Si atom is larger for in ultrathin SiO2 films than in the thicker SiO2 films.

Published
2006

158. (S)-3-Methyl-2-phenylbutylamine, a Versatile Agent to Resolve Chiral, Racemic Carboxylic Acids<SUP>1</SUP>

Author

Chikusa, Y., Fujimoto, T., Ikunaka, M., Inoue, T., Kamiyama, S., Maruo, K., Matsumoto, J., Matsuyama, K., Moriwaki, M., Nohira, H., Saijo, S., Yamanishi, M., and Yoshida, K.

Abstract

(S)-Ibuprofen 2, (S)-ketoprofen 3, and (S)-naproxen 4 are all obtained by optical resolution of the respective racemates with (S)-3-methyl-2-phenylbutylamine (PBA) 1:  (S)-2, 98.7% ee, 39.8% yield; (S)-3, 99.4% ee, 36.7% yield; (S)-4, 99.2% ee, 35.1% yield. (S)-PBA 1 is also useful in resolving other racemic carboxylic acids of pharmaceutical importance; (R)-2-hydroxy-4-phenylbutanoic acid (HPBA) 5, a key intermediate for ACE inhibitors such as benazapril 7, and (S)-2-benzylsuccinic acid (BSA) 6, a key intermediate for hypoglycemic KAD-1229 8, are obtained in 99% ee and 34.4% yield, and in 99% ee and 32.2% yield, respectively.

Published
2002
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162. X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300 °C.

Author

Shioji, M., Shiraishi, T., Takahashi, K., Nohira, H., Azuma, K., Nakata, T., Takata, Y., Shin, S., Kobayashi, K., and Hattori, T.

Subjects
THIN film transistors, THIN films, PHOTOELECTRONS, SILICON oxide, INTERFACES (Physical sciences), SEMICONDUCTORS
Abstract

Using the high-brilliant synchrotron radiation at SPring-8 we have studied the SiO2/Si interface structures, the interface state densities, and the uniformities of ∼1-nm-thick oxide films formed by three kinds of atomic oxygen at 300 °C by measuring Si 2p photoelectron spectra at the photon energy of 1050 eV and the energy loss spectra of O 1s photoelectrons at the photon energy of 714 eV. Among silicon oxide films studied here the abrupt compositional transition at SiO2/Si interface, the smallest deviation in interface state density, the interface state density comparable to that for thermal oxide formed in dry oxygen at 950 °C, and the highest uniformity was obtained with oxide film formed in krypton-mixed oxygen (Kr:O2=97:3) plasma. [ABSTRACT FROM AUTHOR]

Published
2004
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163. Accurate determination of SiO[sub 2] film thickness by x-ray photoelectron spectroscopy.

Author

Takahashi, K., Nohira, H., Hirose, K., and Hattoria, T.

Subjects
*SILICA, *PHOTOELECTRONS, *X-ray spectroscopy, *MONTE Carlo method
Abstract

We established the number of Si 2p photoelectrons emanating from a Si(100) substrate covered with a silicon–oxide film as a function of azimuthal and polar angles using the oxide film thickness as a parameter. The elastic and inelastic scattering cross sections of Si 2p photoelectrons in silicon oxide were deduced by reproducing the experimental results with Monte Carlo simulation for the path of Si 2p photoelectrons in silicon oxide. Based on the simulation, we found that the elastic scattering of Si 2p photoelectrons in silicon oxide could effectively be neglected in several specific directions. We also found that an emitting direction different to these specific directions is indispensable when precisely determining the thickness using XPS with a large receiving angle. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2003
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167. Initial stage of SiO2valence band formation

Author

Hirose, K., Nohira, H., Koike, T., Aizaki, T., and Hattori, T.

Abstract

Detailed changes in valence band spectra of ultra-thin SiO2at initial stages of oxidation are revealed by high resolution X-ray photoelectron spectroscopy. Comparisons of the experimental data with molecular orbital calculations deduce the transition structure near the SiO2/Si interfaces.

Published
1998
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169. Analysis on cycle–by–cycle variation of combustion from pressure indicator data

Author

Nohira, H., Konomi, T., and Ishiyama, S.

Abstract

An indicator analyser has been developed capable of statistical analysis from pressure data from each cylinder of a multi–cylinder engine under steady state conditions by an on–line mini–computer. This analyser is able to acquire engine data under transient conditions as well and to perform interlocutory analyses of any specified combustion cycle utilizing an off–line large computer. Analysis on the causes of cycle–by–cycle variation of combustion has been made and a simple relationship has been derived therefrom such that the variance of indicated mean effective pressure may be broken down into three terms such as variances of released heat and change of internal energy and their co–variance. Experiments revealed that the variance of released heat manifests some characteristics related to the fuel supply system and that of change of internal energy manifests some characteristics related to the pattern of heat released in the cylinder, but the interpretation of the physical significance of the co–variance term remains to be solved. This method is found to be a useful one for analysing the causes of cycle–by–cycle variation of combustion and its improvement in actual engines.

Published
1980
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198. Physical characterisation of high-k gate stacks deposited on HF-last surfaces

Author

Bender, H., primary, Conard, T., additional, Nohira, H., additional, Petry, J., additional, Richard, O., additional, Zhao, C., additional, Brijs, B., additional, Besling, W., additional, Detavernier, C., additional, Vandervorst, W., additional, Caymax, M., additional, De Gendt, S., additional, Chen, J., additional, Kluth, J., additional, Tsai, W., additional, and Maes, J.W., additional

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200. Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition

Author

Cosnier, V., primary, Bender, H., additional, Caymax, A., additional, Chen, J., additional, Conard, T., additional, Nohira, H., additional, Richard, O., additional, Tsai, W., additional, Vandervorst, W., additional, Young, E., additional, Zhao, C., additional, De Gendt, S., additional, Heyns, A., additional, Maes, J.W.H., additional, Tuominen, M., additional, Rochat, N., additional, Olivier, M., additional, and Chabli, A., additional

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