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562 results on '"Xu, Xinlong"'

152. Terahertz Surface Emission from MoSe2 at the Monolayer Limit

Author

Fan, Zeyu, primary, Xu, Manzhang, additional, Huang, Yuanyuan, additional, Lei, Zhen, additional, Zheng, Lu, additional, Zhang, Zhiyong, additional, Zhao, Wu, additional, Zhou, Yixuan, additional, Wang, Xuewen, additional, Xu, Xinlong, additional, and Liu, Zheng, additional

Published
2020
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168. Broadband terahertz generation from an epsilon-near-zero thin film

Author

Jia, Wenhe, primary, Liu, Meng, additional, Lu, Yongchang, additional, Feng, Xi, additional, Wang, Qingwei, additional, Zhang, Xueqian, additional, Ni, Yibo, additional, Hu, Futai, additional, Gong, Mali, additional, Xu, Xinlong, additional, Huang, Yuanyuan, additional, Zhang, Weili, additional, Yang, Yuanmu, additional, and Han, Jiaguang, additional

Published
2020
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174. Spin‐Polarized Electrons Impact on Terahertz Emission by High‐Order Shift Current in CsPbBr3.

Author

He, Yuhang, Su, Rui, Huang, Yuanyuan, Zhao, Qiyi, Zhou, Yixuan, Khurgin, Jacob B., Xiong, Qihua, and Xu, Xinlong

Subjects
LAMB waves, ELECTRONS, SPIN-polarized currents, OPTICAL polarization, SPIN-orbit interactions, EMISSION spectroscopy, TERAHERTZ spectroscopy
Abstract

Ability to generate and manipulate spin‐polarized electrons is the cornerstone of prospective energy‐efficient spin‐based information processing technologies. Here, we report a novel method of generating transient spin‐polarized electrons by two‐photon absorption (TPA) in all‐inorganic perovskite CsPbBr3 using circularly polarized light (CPL) excitation. The photo‐generated transient spin‐polarized current serves as a source for terahertz emission detected in our experiment that shows quadratic pump fluence dependence, consistent with our previous report under linear polarized light excitation. Density functional calculations confirm the experimental results and pinpoint the role of the spin−orbit coupling in enabling TPA of CPL in CsPbBr3. In addition, the maximum degree of spin‐polarization under excitation by the CPL is ~21.3% at room temperature and can be tuned by the polarization of the excitation light with a quarter wave plate. The technique developed in this work can be applied to the analysis of spin‐related properties of materials, making it an important analytical tool for the exploration of future spintronic technology based on inorganic perovskites. [ABSTRACT FROM AUTHOR]

Published
2021
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175. Facile Two‐Step van der Waals Epitaxial Growth of Bi2S3/ReS2 Heterostructure with Improved Saturable Absorption.

Author

Lu, Chunhui, Luo, Mingwei, Yang, Dan, Ma, Jingyao, Qi, Mei, and Xu, Xinlong

Subjects
EPITAXY, PHYSICAL vapor deposition, X-ray photoelectron spectroscopy, CHEMICAL vapor deposition, OPTICAL devices
Abstract

2D van der Waals (vdW) heterostructure provides a novel platform to modulate linear and nonlinear optical (NLO) properties for optical devices by interface engineering. However, NLO properties and mechanisms based on vdW heterostructures are far from complete understanding. Herein, two‐step vdW vapor epitaxial growth by either physical or chemical vapor deposition methods is successfully demonstrated to synthesize uniform Bi2S3/ReS2 vdW heterostructures in large area. Type‐II band‐alignment of these heterostructures is confirmed by X‐ray photoelectron spectroscopy combined with the UV–Vis spectra. The enhanced NLO response of Bi2S3/ReS2 films is observed with high saturable absorption coefficient (≈−445 cm GW−1), large modulation depth (≈10.5%), and low saturation intensity (≈105 GW cm−2). Energy level model based on type‐II charge transfer process is used successfully to understand the optical physics process at the interface of the vdW heterostructures. Constructing heterostructures with two‐step vdW vapor epitaxial growth provides a new method to design high‐performance nonlinear photonic devices with 2D materials. [ABSTRACT FROM AUTHOR]

Published
2021
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177. Large nonlinear optical absorption and refraction of β-In2Se3thin film from above to below bandgap excitation

Author

Wu, Dan, Dong, Wen, Ge, Yanqing, Cao, Xueqin, Shi, Mingjian, Li, Erkang, Ma, Nan, Zhou, Yixuan, Huang, Yuanyuan, Lu, Chunhui, and Xu, Xinlong

Abstract

Nonlinear optical materials, especially two-dimensional materials, are anticipated to reveal broadband optical nonlinearity for future miniaturized photonic applications. Herein, we report a physical vapor deposition method to produce β-In2Se3thin film and investigate the broadband nonlinear absorption (β) and refraction (n2) characteristics. The β-In2Se3semiconductor shows an excellent optical nonlinearity with large βin 102cm GW−1scale and n2in 10−12cm2W−1scale from visible to NIR wavelengths, which are superior to those of metal carbides and nitrides (MXenes) and metal-organic frameworks. This excellent optical nonlinearity makes β-In2Se3a promising candidate for advanced nanophotonic devices and beyond.

Published
2024
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178. Layer-Dependent Nonlinear Optical Properties of WS2, MoS2, and Bi2S3Films Synthesized by Chemical Vapor Deposition

Author

Lu, Chunhui, Luo, Mingwei, Ge, Yanqing, Huang, Yuanyuan, Zhao, Qiyi, Zhou, Yixuan, and Xu, Xinlong

Abstract

Two-dimensional (2D) layered materials have shown layer-dependent optical properties in both linear optical and nonlinear optical (NLO) regimes due to prominent interlayer coupling and quantum confinement in an atomic scale. However, the NLO properties become more complicated as both saturable absorption (SA) and reverse saturable absorption (RSA) easily happen in 2D materials, which results in a significant challenge to understand the evolution of nonlinear absorption with layers. Motivated by this, chemical vapor-deposited chalcogenide compounds (WS2, MoS2, and Bi2S3) are used to investigate the pump intensity and layer number-dependent NLO properties. The values of nonlinear absorption coefficients of these chalcogenide compounds increase with the pump intensity by an 800 nm femtosecond laser, which can be described by an empirical power law function. The SA process due to the large transition probability of the ground state readily takes place in thick samples, while RSA occurs easily in thin samples due to the two-photon absorption (TPA). The transition from TPA to SA is deduced to occur at 13L-WS2, 15L-MoS2, and 5L-Bi2S3, which is related to the layer-dependent band gaps. Our results provide an efficient way to tune optical nonlinearities with a controlled layer number and to design corresponding NLO devices such as optical switches and saturable absorbers.

Published
2022
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179. Vertically oriented SnS2on MoS2nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

Author

Liu, Yuqi, Lu, Chunhui, Luo, Mingwei, Han, Taotao, Ge, Yanqing, Dong, Wen, Xue, Xinyi, Zhou, Yixuan, and Xu, Xinlong

Abstract

Van der Waals heterostructures have great potential for the emerging self-powered photoelectrochemical photodetectors due to their outstanding photoelectric conversion capability and efficient interfacial carrier transportation. By considering the band alignment, structural design, and growth optimization, the heterostructures of vertically oriented SnS2with different densities on MoS2nanosheets are designed and fabricated using a two-step epitaxial growth method. Compared with SnS2, MoS2, and low density–vertical SnS2/MoS2heterostructure, the high density–vertical SnS2/MoS2heterostructure exhibits largely enhanced self-powered photodetection performances, such as a giant photocurrent density (∼932.8 μA cm−2), an excellent photoresponsivity (4.66 mA W−1), and an ultrafast response/recovery time (3.6/6.4 ms) in the ultraviolet-visible range. This impressive enhancement of high density–vertical SnS2/MoS2photodetectors is mainly ascribed to the essentially improved charge transfer and carrier transport of type-II band alignment heterostructures and the efficient light absorption from the unique light-trapping structure. In addition, the photoelectrocatalytic water splitting performance of the high density–vertical SnS2/MoS2heterostructure also benefits from the type-II band alignment and the light-trapping structure. This work provides valuable inspiration for the design of two-dimensional optoelectronic and photoelectrochemical devices with improved performance by the morphology and heterostructure design.

Published
2022
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180. Terahertz radiation from layered crystal and thin-film tungsten disulfide surface pumped by a femtosecond laser

Author

Zhang Longhui, Yao Zehan, Zhu Lipeng, Huang Yuanyuan, Zhao Qiyi, and Xu Xinlong

Subjects
Materials science, genetic structures, business.industry, Terahertz radiation, Tungsten disulfide, Field effect, Laser, eye diseases, law.invention, Crystal, Optical rectification, chemistry.chemical_compound, chemistry, law, Femtosecond, Optoelectronics, sense organs, Thin film, business
Abstract

Terahertz radiation from layered tungsten disulfide crystal and thin-film on substrates are investigated experimentally. The results indicated different effect such as optical rectification and field effect, which are significant in terahertz emission process.

Published
2018

193. Insight into the role of Ni–Fe dual sites in the oxygen evolution reaction based on atomically metal-doped polymeric carbon nitride

Author

Wu, Chuchu, primary, Zhang, Xiaoming, additional, Xia, Zhangxun, additional, Shu, Miao, additional, Li, Huanqiao, additional, Xu, Xinlong, additional, Si, Rui, additional, Rykov, Alexandre I., additional, Wang, Junhu, additional, Yu, Shansheng, additional, Wang, Suli, additional, and Sun, Gongquan, additional

Published
2019
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