390 results on '"Yoon, Soon Fatt"'
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152. Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm
153. Doping effect on two-state lasing in 1.3µm InAs/GaAs quantum dot lasers
154. 1.55-$\mu$m GaNAsSb-Based Photoconductive Switch for Microwave Switching
155. Temperature-Dependent Study on Modal Gain and Differential Gain of 1.3-$\mu$m InAs–GaAs QD Lasers With Different $p$-Doping Levels
156. Gallium arsenide (GaAs) island growth under SiO2nanodisks patterned on GaAs substrates
157. III-V/Si integration
158. Large-area and high-resolution distortion measurement based on moiré fringe method for hot embossing process
159. White-light scanning interferometer for absolute nano-scale gap thickness measurement
160. 1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge
161. Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication
162. A novel white-light scanning interferometer for absolute nano-scale gap thickness measurement
163. Fusion of metrology data for large-scale high-volume manufacturing of polymer-based microfluidic devices
164. Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-$\mu{\hbox {m}}$ InAs–GaAs Quantum-Dot VCSELs
165. Fabrication of 3-D Curved Microstructures by Constrained Gas Expansion and Photopolymerization
166. Review of production of microfluidic devices: material, manufacturing and metrology
167. Three dimensional sidewall measurements by laser fluorescent confocal microscopy
168. Growth of 1-eV GaNAsSb-based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios.
169. Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
170. Two-Dimensional Electron Gas Mobility Enhancement in Inverted GaAs/n-AlGaAs Heterostructures Grown by Molecular Beam Epitaxy
171. PERFORMANCE OF PMMA FOR NANODOT PATTERNING USING ELECTRON BEAM LITHOGRAPHY
172. Influence of k·p Formalisms on the Band Structure of InxGa1-xAs1-yNy/GaAs Quantum Well: A Comparison of 8-Band and 10-Band Models
173. Comparison of Lasing Characteristics of GaInNAs Quantum Dot Lasers and GaInNAs Quantum Well Lasers
174. Growth of GaAs on (100) Ge and Vicinal Ge Surface by Migration Enhanced Epitaxy
175. THERMAL CHARACTERIZATION OF GaAsN THIN FILMS BY PULSED PHOTOTHERMAL REFLECTANCE TECHNIQUE
176. Review of production of microfluidic devices: material, manufacturing and metrology.
177. Strained p-type InGaAs/AlGaAs multiple quantum well infrared photodetectors
178. Characterization of GaInAsP/InP multiple quantum wells grown by solid source MBE for long wavelength infrared detection
179. RM3 integration of InP based 1.55 μm P-i-N photodetectors with silicon CMOS optical clock distribution circuits.
180. Analysis of optical gain of GaInNAs/GaAs compressive strained quantum well lasers
181. Strained p-type InGaAs/AlGaAs multiple quantum well infrared photodetectors.
182. The integration of InGaP LEDs with CMOS on 200 mm silicon wafers
183. Analysis of optical gain of GaInNAs/GaAs compressive strained quantum well lasers.
184. Pseudomorphic InxGa1-xAs/InyAl1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy.
185. InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam epitaxy.
186. Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy.
187. High microwave performance of InGaP/GaAs HBT with beryllium-doped base grown by solid source MBE.
188. InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam epitaxy
189. Pseudomorphic In x Ga 1-x As/In y Al 1-y As high-electron mobility transistor structures grown by solid source molecular beam epitaxy
190. High microwave performance of InGaP/GaAs HBT with beryllium-doped base grown by solid source MBE
191. Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy
192. Deposition of potassium lithium niobate films by sol-gel method
193. InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for long-wavelength infrared detection
194. Effects of V/III Ratio on the Properties of In1-xGaxP/GaAs Grown by a Valved Phosphorus Cracker Cell in Solid Source Molecular Beam Epitaxy
195. Influence of IMP copper flash layer on the properties of copper films deposited by metal organic chemical vapor deposition
196. Doping Effects on P-type InGaAs/AlGaAs Quantum Well Structures for Infrared Photodetectors Grown by Molecular Beam Epitaxy
197. Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell: Optimization of Electrical, Optical and Surface Morphology Characteristics
198. Measurements and analysis of beam current and beam diameter of an electron-beam lithography system
199. Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
200. Growth of strained InGaAs/GaAs by molecular beam epitaxy: a surface morphology, Raman spectroscopy and photoluminescence combined study
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