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Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy.
- Source :
- Proceedings of SPIE; Nov2000, Issue 1, p14-19, 6p
- Publication Year :
- 2000
Details
- Language :
- English
- ISSN :
- 0277786X
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Conference
- Accession number :
- 65687738
- Full Text :
- https://doi.org/10.1117/12.405385