401. BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm.
- Author
-
Razzak, Towhidur, Chandrasekar, Hareesh, Hussain, Kamal, Lee, Choong Hee, Mamun, Abdullah, Xue, Hao, Xia, Zhanbo, Sohel, Shahadat H., Rahman, Mohammad Wahidur, Bajaj, Sanyam, Wang, Caiyu, Lu, Wu, Khan, Asif, and Rajan, Siddharth
- Subjects
- *
DIELECTRIC materials , *SCHOTTKY barrier diodes , *DIODES , *HETEROJUNCTIONS , *ELECTRIC fields , *MATERIALS management - Abstract
In this Letter, we demonstrate a Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diode with enhanced breakdown characteristics. By using BaTiO3, a high-k material, as a dielectric material between the anode and semiconductor, the peak electric field at the anode edge near the cathode was significantly reduced and an average breakdown field exceeding 8 MV/cm was achieved for devices with an anode to cathode spacing of <0.2 μm. In contrast, Pt/Al0.58Ga0.42N control Schottky diodes displayed an average breakdown field of ∼4 MV/cm for devices with similar dimensions. The use of a high-k dielectric can more effectively utilize the high breakdown fields in ultra-wide bandgap materials by proper management of the electric field. This demonstration thus provides a framework to realize ultra-scaled lateral devices with improved breakdown characteristics. [ABSTRACT FROM AUTHOR]
- Published
- 2020
- Full Text
- View/download PDF