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BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm.
- Source :
-
Applied Physics Letters . 1/13/2020, Vol. 116 Issue 2, p1-5. 5p. 6 Graphs. - Publication Year :
- 2020
-
Abstract
- In this Letter, we demonstrate a Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diode with enhanced breakdown characteristics. By using BaTiO3, a high-k material, as a dielectric material between the anode and semiconductor, the peak electric field at the anode edge near the cathode was significantly reduced and an average breakdown field exceeding 8 MV/cm was achieved for devices with an anode to cathode spacing of <0.2 μm. In contrast, Pt/Al0.58Ga0.42N control Schottky diodes displayed an average breakdown field of ∼4 MV/cm for devices with similar dimensions. The use of a high-k dielectric can more effectively utilize the high breakdown fields in ultra-wide bandgap materials by proper management of the electric field. This demonstration thus provides a framework to realize ultra-scaled lateral devices with improved breakdown characteristics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 116
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 141280114
- Full Text :
- https://doi.org/10.1063/1.5130590