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1. Imaging of interstitial atoms in Ga1-xMnxAs layers by means of X-ray diffuse scattering.

Author

Kopecký, Miloš, Busetto, Edoardo, Lausi, Andrea, Šourek, Zbynēk, Kub, Jiří, Cukr, Miroslav, Novák, Vít, Olejník, Kamil, and Wright, Jonathan P.

Subjects
ATOMS, IMAGING systems, X-ray crystallography, DIFFUSION, CRYSTAL optics, GALLIUM, TETRAHEDRA
Abstract

The local atomic structure of a Ga1-xMnxAs (x = 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of gallium and/or arsenic tetrahedra in the GaMnAs unit cell. [ABSTRACT FROM AUTHOR]

Published
2008
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