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ZnO:Mn thin films were prepared on glass substrates using RF magnetron sputtering method.Raman spectroscopy,X-ray diffraction spectra and SEM were used to analyze the structural characteristics of ZnO:Mn films with the different working pressure.The results show that ZnO:Mn thin films have the significant wurtzite structure with the different working pressure.The leftshifts of the Raman peaks corresponding to E2(High) mode and related to Mn doping are explained by the appearance of much more lattice defects and disorder in ZnO:Mn films with decreasing working pressure,which are also evidenced by XRD and SEM results.

ZnO∶ Mn thin films with different Mn concentration were prepared on glass substrates at room temperature using RF magnetron sputtering method.Raman spectroscopy,X-ray diffraction spectra and SEM were used to analyze the structural characteristics of the ZnO∶ Mn films.The results show that ZnO∶ Mn thin films have significant wurtzite structure with Mn doping mole fraction from 0 up to 5.6%.The redshift of Raman peaks at 437 cm-1and 527 cm-1can be explained by the lattice defects and disorder induced by the increasing of Mn concentration.The appearance of Raman spectra at 647 cm-1indicates the formation of MnO,leading to the worse crystallization of ZnO∶ Mn films,which is also evidenced by XRD and SEM results.

A method to improve the performance of polymer waveguide devices by Inductively Coupled Plasma(ICP) etching is proposed and the principle and advantages of ICP etching technology are introduced.Polymethyl Methacrylate-glycidyl Methacrylate(P(MMA-GMA)) is chosen as the waveguide material to study the influence of various ICP parameters on the etching results when oxygen is selected to be the process gas.Firstly,the fabrication process of an inverted ridge waveguide device is introduced in detail.Then the variations of etching results with time,powers,pressures,gas flow parameters are analyzed by changing a single process parameter.Finally,the optimized groove and the slab structures are characterized.Experimental results indicate that the waveguide surface morphology can be improved effectively and a good shape of P(MMA-GMA) groove structure can be achieved by using the optimized IPC etching parameters in an antenna RF of 300 W,a bias RF power of 30 W,a gas pressure of 0.5 Pa and a oxygen flow velocity of 50 cm3/min.