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The Acrylate resin layer has lower dielectric constant(e≈3.5),better optical transparency,and can be spin-coated as a flat surface film easily.By using resin as passivation layer in the array process,the vertical gap is increased between the Common ITO and bus line and plannar the devices.This reduces unwanted capacitive coupling and enables the pixel electrode to be extended over the gate and data lines,thus increasing aperture area,specifi-cally decreases power.In this work,there were some problems between the resin passivation layer and pixel ITO,such as Mo attack,missing ITO and so on.After optimizing the process of ITO Etching,photosensitive resin and non-photosensitive resin perfectly match with ITO etchant and Resin Coating,the resin passivation layer is sucessfully applied to the TFT-LCD.

A low dielectric material, acrylate resin has been investigated as a passivationdielectric layer for thin-film transistor (TFT) arrays in this paper. Compared with the conventional nitride film (SiNx, e≈7), the acrylate resin passivation layer exhibits a flat surfaceand a low dielectric constant (e≈4.5) which lowers the RC delay in a device. The hightransmittance and good planarization characteristics of the low dielectric acrylate resin filmenhance the brightness and aperture ratio of thin film transistors liquid crystal displays (TFT-LCDs), and lower the manufacture cost.

By analyzing the relation among different slit bar design of mask,TFT channel profile and electric characteristic,it's found that the TFT electric characteristic,ripple size and channel FICD bias are becoming better while slit or bar size decreases.The slit size has greater influence than bar size on TFT characteristic.Considering the ratio of short in the corner of channel,the small slit bar design is suitable for four mask processing,and the corner defect can be avoided by tuning bar size.