1. High temperature single photon emitter monolithically integrated on silicon
- Author
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L. Cavigli, 1 S. Bietti, 2 N. Accanto, 1 S. Minari, 1 M. Abbarchi, 1 G. Isella, 3 C. Frigeri, 4 A. Vinattieri, 1 M. Gurioli, 1, S. Sanguinetti2, Cavigli, L, Bietti, S, Accanto, N, Minari, S, Abbarchi, M, Isella, G, Frigeri, C, Vinattieri, A, Gurioli, M, and Sanguinetti, S
- Subjects
Silicon ,Photon ,Photoluminescence ,Physics and Astronomy (miscellaneous) ,Exciton ,chemistry.chemical_element ,Gallium arsenide ,chemistry.chemical_compound ,Optics ,Quantum Dots ,Microelectronics ,Monolithical integration ,FIS/03 - FISICA DELLA MATERIA ,Common emitter ,Physics ,business.industry ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,III-V Semiconductor ,Quantum Nanostructure ,chemistry ,Quantum dot ,Optoelectronics ,Molecular Beam Epitaxy ,Si ,business ,Single Photon - Abstract
We report on triggered single photon emission from GaAs quantum dots, grown on Si substrates and obtained by means of fabrication protocols compatible with the monolithic integration on Si based microelectronics. Very bright and sharp individual exciton lines are resolved in the spectra and can be followed up to 150 K. The nature of quantum emitters of single photon pulses can be measured up to liquid nitrogen temperature by Hanbury Brown and Twiss interferometric correlations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726189]
- Published
- 2012
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