Search

Your search keyword '"3S Photonics"' showing total 9 results
Start Over Author "3S Photonics"
9 results on '"3S Photonics"'

1. Optical Transimpedance Receiver for High Data Transmission in OFDM Modulation Format

Author

Frederique Deshours, Georges Alquie, Ghalid Idir Abib, Emmanuel Grard, Victor Rodrigues, Eric Leclerc, Ali Kabalan, Anne-Laure Billabert, Laboratoire d'Electronique et Electromagnétisme (L2E), Université Pierre et Marie Curie - Paris 6 (UPMC), Département Electronique et Physique (TSP - EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), 3S Photonics, United Monolithic Semiconductors (UMS), Electronique, Systèmes de communication et Microsystèmes (ESYCOM), Conservatoire National des Arts et Métiers [CNAM] (CNAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris, Département Electronique et Physique (EPH), and Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris-Conservatoire National des Arts et Métiers [CNAM] (CNAM)

Subjects
Transimpedance amplifier, Engineering, business.industry, Orthogonal frequency-division multiplexing, Optical link, 020208 electrical & electronic engineering, Electrical engineering, 02 engineering and technology, Optical performance monitoring, Optical modulation amplitude, Noise figure, Passive optical network, Atomic and Molecular Physics, and Optics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 020210 optoelectronics & photonics, Radio over fiber, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, business
Abstract

International audience; This paper presents the design and performance of a single-ended transimpedance amplifier (TIA) for gigabit passive optical networks (GPON) implementing orthogonal frequency division multiplexing (OFDM) modulation format. The circuit is realized using an industrial GaAs integrated technology. Low power consumption and small chip area are the main challenges in the TIA design. On-wafer characterization in terms of S-parameters, noise figure, gain compression and intermodulation are presented and compared to simulated results showing a good agreement. The TIA is linked with a broadband PIN photodiode and introduced in a radio over fiber (RoF) system. The optical link is simulated in a microwave software and characterized in terms of error vector magnitude (EVM) by varying the radio frequency (RF) input power and the laser bias current.

Published
2015

2. 1060nm seed laser diodes in pulsed operation: performances and safe operating area

Author

Le Gales, Germain, Giulia, Marcello, Joly, Simon, Pedroza, Guillaume, Morisset, Adèle, Laruelle, François, Darracq, Frederic, Bechou, Laurent, Université de Bordeaux (UB), Université de Cagliari, Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, ALPhANOV, and 3S Photonics

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

3. Thermal Behavior of High Power GaAs-Based Laser Diodes in Vacuum Environment

Author

Laurent Bechou, François Laruelle, Jérémy Michaud, Stefan Dilhaire, David Veyrie, Stéphane Grauby, Laboratoire Ondes et Matière d'Aquitaine (LOMA), Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Centre National d’Études Spatiales [Paris] (CNES), and 3S Photonics

Subjects
Facet (geometry), Materials science, Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Temperature measurement, law.invention, Semiconductor laser theory, 010309 optics, 020210 optoelectronics & photonics, Optics, law, unpumped window, 0103 physical sciences, Thermal, Vacuum environment, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Diode, Catastrophic optical damage, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Laser diode, laser diode, business.industry, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Optoelectronics, business, facet temperature variation
Abstract

International audience; Since 980-nm GaAs-based laser diodes are now implemented in space missions, there is a huge need to study their thermal behavior under vacuum in order to evaluate their reliability. Then spatially resolved temperature variations have been evaluated by thermoreflectance on the front facet under atmospheric and vacuum conditions, and for two different unpumped windows lengths. We show that, in all cases, vacuum induces a front facet temperature variation increase of the laser diodes, making them more sensitive to a catastrophic optical damage.

Published
2016

4. Precise Facet Temperature Distribution of High- Power Laser Diodes: Unpumped Window Effect

Author

Stéphane Grauby, Laurent Bechou, Jérémy Michaud, Pamela del Vecchio, Mauro Bettiati, David Veyrie, François Laruelle, Laboratoire Ondes et Matière d'Aquitaine (LOMA), Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS), 3S Photonics, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and Centre National d'Études Spatiales [Toulouse] (CNES)

Subjects
Catastrophic optical damage, Facet (geometry), [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Laser diode, business.industry, Catastrophic optical degradation, Laser, Temperature measurement, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Semiconductor laser theory, Power (physics), law.invention, Optics, Facet temperature variation, law, unpumped window, Optoelectronics, Electrical and Electronic Engineering, business, Diode
Abstract

International audience; A thermoreflectance technique is used to evaluate the temperature variations at the output facet of high-power GaAs-based laser diodes emitting at 980 nm. Two kinds of diodes with different unpumped windows (UPWs) are studied to determine the influence of UPW length on the temperature variation. We show that in the vicinity of the active region, where a catastrophic optical damage is most susceptible to occur, the short UPW diode heats much more (up to 40%) than the long UPW one.

Published
2015

5. Accurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement

Author

Mauro Bettiati, Pamela del Vecchio, Yannick Deshayes, François Laruelle, Laurent Bechou, Simon Joly, 3S Photonics, Laboratoire Ondes et Matière d'Aquitaine (LOMA), Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and Joly, Simon

Subjects
Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], Gallium nitride, 02 engineering and technology, 01 natural sciences, Semiconductor laser theory, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Breakdown voltage, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Diode, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, High voltage, 021001 nanoscience & nanotechnology, Laser, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Degree of polarization, Optoelectronics, 0210 nano-technology, business, Light-emitting diode
Abstract

International audience; In this study, we report on a methodology based on reverse and forward current-voltage curves (I-V) and on Degree of Polarization (DoP) of electroluminescence measurements on 980 nm laser diodes chip-on-submount (CoS) for the improvement of screening tests. Current-voltage curves are performed at reverse bias up to breakdown voltage (VBR) using both a high current accuracy (< 1 pA) and high voltage resolution (< 10 mV) at different submount-temperatures (20-50°C). The DoP of luminescence of such devices, related to strains in materials and effect of shear strain on the birefringence, is calculated from the simultaneous measurement of TE (LTE) and TM (LTM) polarized light emissions. We observe that application of high reverse voltages occasionally produces significant micro-plasma (MP) pre-breakdown on reverse I-V characteristics as recently observed in InGaN/GaN LEDs and assumed to be a response of electrically active defects. Comparisons between breakdown voltages and number of MP, and changes of leakage current at low forward voltage (< 0.1 V) are considered. DoP measurements are also analyzed versus temperature. Finally the usefulness of these measurements for effective screening of devices is discussed.

Published
2014

6. Spectral phase en/decoders for OCDMA access network

Author

Ihsan Fsaifes, Audrey Millaud, Marc Douay, Catherine Lepers, Cédric Ware, Steevy Cordette, Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Département Communications & Electronique (COMELEC), Laboratoire Traitement et Communication de l'Information (LTCI), Télécom ParisTech-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Télécom ParisTech-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure des Télécommunications (ENST), 3S Photonics, Département Electronique et Physique (EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Centre National de la Recherche Scientifique (CNRS), and Département Electronique et Physique (TSP - EPH)

Subjects
Access network, Optical communication, Phase (waves), Physics::Optics, 02 engineering and technology, Interference (wave propagation), 01 natural sciences, Passive optical network, 010309 optics, 020210 optoelectronics & photonics, Fiber Bragg grating, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Refractive index, Mathematics, Computer Science::Information Theory
Abstract

International audience; OCDMA en/decoders based on chirped fiber Bragg grating with phase shifts are realized by using a photo-writing setup based on the travelling interference fringe method. Experimental results, both for the spectral phase en/decoders fabrication and the OCDMA system demonstration are presented and discussed

Published
2010

7. Optimisation du facteur de qualité d'une OLED en microcavité : vers des diodes lasers organiques

Author

Chakaroun, M., Alexis P.A. Fischer, Romero, R., Boudrioua, A., Nourine, M., Dogheche, K., Solard, J., Chambonnet, D., Chen, C., Laboratoire de Physique des Lasers (LPL), Université Paris 13 (UP13)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), 3S Photonics, Department of Optics ad Photonics, National Central University [Taiwan] (NCU), and Fauvez, Valérie

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; Cette étude a pour objectif l'optimisation du facteur de qualité de micro cavités destinées à permettre la réalisation de diodes lasers organiques. Le confinement vertical assuré par une structure de type VECSEL à miroirs multicouches et le confinement latéral assuré par des matériaux nanostructurés à bande interdite sont étudiés et discutés. Plus particulièrement, les facteurs de qualité de microcavités à base de trois couples de matériaux différents TiO2/SiO2, Ta2O5/SiO2, Mgf2/ZnS, sont comparés et étudiés en fonction du nombre de couches des miroirs. Des facteurs de qualités supérieurs à 10 000 sont obtenus pour des structures optimisées à cavités étendues.

Published
2009

8. Resonant tunnelling spectroscopy of the local density of states in a disordered conductor

Author

A. K. Savchenko, Giancarlo Faini, J. P. Holder, E. Bedel, F. Laruelle, Benoit Jouault, Vladimir I. Fal'ko, Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), 3S Photonics, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
Physics, Local density of states, Condensed matter physics, Spectrometer, Magnitude (mathematics), FLUCTUATIONS, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Omega, Electronic, Optical and Magnetic Materials, Magnetic field, Conductor, Impurity, Condensed Matter::Superconductivity, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Quantum tunnelling
Abstract

8th International Conference on Hopping and Related Phenomena (HRP8), MURCIA, SPAIN, SEP 07-10, 1999; International audience; We have studied the effects of magnetic field on the fluctuations of the electron density of states in a disordered conductor, a contact in the resonant tunnelling structure GaAlAs/GaAs/GaAlAs. The local density of states (LDOS) in the contact is detected by an impurity which acts as a `spectrometer'. In the regime of weak magnetic field, omega(c)tau less than or equal to 1, a linear increase of the fluctuation magnitude with B-2 is seen, due to the decrease of the volume where the LDOS is formed and a decrease in the statistical averaging. In the regime omega(c)tau greater than or equal to 1, large oscillations of the fluctuation magnitude have been observed. We suggest an explanation of this new effect, de Haas-van Alphen type oscillations in the fluctuation magnitude. The behaviour of impurity spectrometers in a magnetic field and images given by a complex spectrometer are also discussed.

Published
2000

9. Multi-wavelength dye concentration determination for enzymatic assays: evaluation of chromogenic para-nitrophenol over a wide pH range.

Author

Max JJ, Meddeb-Mouelhi F, Beauregard M, and Chapados C

Subjects
Coloring Agents chemistry, Fungal Proteins chemistry, Hydrogen-Ion Concentration, Hydrolysis, Lipase chemistry, Nitrophenols chemistry, Spectrophotometry, Ultraviolet, Coloring Agents analysis, Enzyme Assays methods, Enzyme Assays standards, Nitrophenols analysis
Abstract

Enzymatic assays need robust, rapid colorimetric methods that can follow ongoing reactions. For this, we developed a highly accurate, multi-wavelength detection method that could be used for several systems. Here, it was applied to the detection of para-nitrophenol (pNP) in basic and acidic solutions. First, we confirmed by factor analysis that pNP has two forms, with unique spectral characteristics in the 240 to 600 nm range: Phenol in acidic conditions absorbs in the lower range, whereas phenolate in basic conditions absorbs in the higher range. Thereafter, the method was used for the determination of species concentration. For this, the intensity measurements were made at only two wavelengths with a microtiter plate reader. This yielded total dye concentration, species relative abundance, and solution pH value. The method was applied to an enzymatic assay. For this, a chromogenic substrate that generates pNP after hydrolysis catalyzed by a lipase from the fungus Yarrowia lipolytica was used. Over the pH range of 3-11, accurate amounts of acidic and basic pNP were determined at 340 and 405 nm, respectively. This method surpasses the commonly used single-wavelength assay at 405 nm, which does not detect pNP acidic species, leading to activity underestimations. Moreover, alleviation of this pH-related problem by neutralization is not necessary. On the whole, the method developed is readily applicable to rapid high-throughput of enzymatic activity measurements over a wide pH range.

Published
2012
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results