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3 results on '"ANR: ACCENT '

1. ACCENTS: a Vision for D2D Communications within 5G Networks

Author

Bader, Faouzi, Bodinier, Quentin, Rousset, Olivier, Untersee, Alain, Dziri, Aii, Rostom Zakaria, Pischella, Mylene, Iacobelli, Lorenzo, Bourrous, Anael, Conservatoire National des Arts et Métiers [CNAM] (CNAM), Centre d'études et de recherche en informatique et communications (CEDRIC), Ecole Nationale Supérieure d'Informatique pour l'Industrie et l'Entreprise (ENSIIE)-Conservatoire National des Arts et Métiers [CNAM] (CNAM), Teamcast, Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), French National Research Agency (ANR) through the ACCENTS project [ANR-14-CE28-0026-01], ANR-14-CE28-0026,ACCENT5,Formes d'onde avancées, MAC et allocation dynamique de ressource radio pour les communications directes de terminal à terminal dans les réseaux 5G(2014), Université de Nantes (UN)-Université de Rennes 1 (UR1), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)

Subjects
Research agency, ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS, LTE Networks, Medium access control, Network layers, [SPI.TRON]Engineering Sciences [physics]/Electronics, Deviceto-device (D2D) communication, [INFO.INFO-NI]Computer Science [cs]/Networking and Internet Architecture [cs.NI], 5G mobile communication systems, Mobile telecommunication systems, D2D communications, Queueing networks, Design and dynamics, Wireless telecommunication systems, Thales Communications, Physical layers, Radio resource allocation
Abstract

International audience; The paper presents the studies that have been led toward the integration of device-to-device (D2D) communications within LTE networks in the frame of the project ACCENTS (Advanced Waveforms, MAC Design and Dynamic Radio Resource Allocation for Device-to-Device in SG Wireless Networks) supported by the French National Research Agency. The solutions presented in this paper cover several aspects of D2D communications; they are the result of a close cooperation between four partners: Thales Communications and Security, CNAM, TeamCast and CentraleSupelec. Physical Layer aspects have been investigated, especially concerning waveforms envisioned for D2D communications within SG networks. Also, a new MAC protocol has been designed to address the issues raised by the integration of D2D transmissions within LTE cells. The solution coming out of the study guarantees a minimum QoS for both types of users (D2D users and regular users) and aims at reusing spectrum while offloading the burden on the base station.

Published
2017
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2. Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits

Author

Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Fregonese, Sebastien, Programme National en Nanosciences et Nanotechnologies (PNANO) - Action Calcul Composants En NanoTubes de carbone : simulation multi-échelle, de l'atomistique au circuit - - ACCENT2006 - ANR-06-NANO-0069 - PNANO - VALID, Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, and ANR: Projet ACCENT, PANINI, NANOGRAIN,Projet ACCENT, PANINI, NANOGRAIN

Subjects
Materials science, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 02 engineering and technology, Ring oscillator, Carbon nanotube, CNTFET, 01 natural sciences, law.invention, law, 0103 physical sciences, Materials Chemistry, Electronic engineering, compact modelling, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Electronic circuit, 010302 applied physics, carbon nanotubes, business.industry, Transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Carbon nanotube field-effect transistor, Nanoelectronics, Logic gate, Optoelectronics, transistor, Field-effect transistor, 0210 nano-technology, business
Abstract

International audience; This paper investigates the impact of the metallic nanotube (M-NT) presence within CNTFET circuits: circuit yield and performances are analyzed using calibrated compact models for both the CNTFET and the M-NT. The major cause of technological dispersion in CNTFET technology comes from the control of the carbon nanotube chirality. This lack of control may lead to the presence of metallic nanotubes in the transistor. These M-NTs create shorts which dramatically increase the source–drain leakage current. The random presence and position of M-NT in the ring oscillator circuit is analyzed using Monte Carlo simulation. Two inverter layout configurations are considered in the study and we deduce that a strong improvement in term of yield and power consumption can be obtained using a specific layout configuration where the tubes are shared for the P-CNTFET and the N-CNTFET.

Published
2009

3. Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design

Author

Thomas Zimmer, Sebastien Fregonese, Cristell Maneux, H. Cazin d'Honincthun, Jean-Philippe Bourgoin, Philippe Dollfus, J. Goguet, S. Galdin-Retailleau, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Département de Recherche sur l'Etat Condensé, les Atomes et les Molécules (DRECAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-06-NANO-0069,ACCENT,Action Calcul Composants En NanoTubes de carbone : simulation multi-échelle, de l'atomistique au circuit(2006), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), ANR: ACCENT & HF CNTFET,ACCENT & HF CNTFET, and Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1

Subjects
Engineering, Circuit design, Monte Carlo method, technological dispersion, 02 engineering and technology, Ring oscillator, CNTFET, 01 natural sciences, Carbon nanotube, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Monte Carlo simulation, 010302 applied physics, Computer simulation, business.industry, Transistor, Propagation delay, compact modeling, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Carbon nanotube field-effect transistor, Nanoelectronics, transistor, 0210 nano-technology, business
Abstract

International audience; Abstract—We present a computationally efficient physics-based compact model designed for the conventional CNTFET featuring a MOSFET-like operation. A large part of its novelty lies on the implementation of a new analytical model of the channel charge. In addition, Boltzmann Monte Carlo (MC) simulation is performed with the challenge to cross-link this simulation technique to the compact modeling formulation. The comparison of the electrical characteristics obtained from the MC simulation and from the compact modeling demonstrates the compact model accuracy within its range of validity. Then, from a study of the CNT diameter dispersion for three technological processes, the compact model allows us to determine the CNTFET threshold voltage distribution and to evaluate the resulting dispersion of the propagation delay from the simulation of a ring oscillator.

Published
2008

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