101 results on '"Adamu-Lema, Fikru"'
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2. Scaling and intrinsic parameter fluctuations in nano-CMOS devices
3. Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit
4. Statistical Study of Bias Temperature Instabilities by Means of 3D 'Atomistic' Simulation
5. TCAD-Based Design Technology Co-optimization for Variability in Nanoscale SOI FinFETs
6. RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
7. TCAD Simulation of Novel Semiconductor Devices
8. Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell
9. Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework
10. The Extraction of Polyoxometalate Flash Compact Model and Corresponding Circuit Simulation
11. Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment
12. Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulation
13. A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory
14. Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs
15. Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study
16. Dynamic Simulation of Write ‘1’ Operation in the Bi-stable 1-Transistor SRAM Cell
17. Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)
18. Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
19. Multiscale Modeling of Charge Trapping in Molecule Based Flash Memories
20. Variability predictions for the next technology generations of n-type \ud SixGe1-x nanowire MOSFETs
21. Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study
22. Intrinsic parameter fluctuations in nanometre scale thin-body SOI devices introduced by interface roughness
23. Understanding Electromigration in Cu-CNT Composite Interconnects
24. Z²-FET as capacitor-less eDRAM cell for high-density integration
25. Extended analysis of the Z²-FET: operation as capacitorless eDRAM
26. Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs
27. Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs
28. The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study
29. NESS: new flexible Nano-Electronic Simulation Software
30. Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study
31. Modelling and simulation of advanced semiconductor devices
32. ${Z}^{\textsf {2}}$ -FET as Capacitor-Less eDRAM Cell For High-Density Integration
33. Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications
34. Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM
35. Does a nanowire transistor follow the golden ratio? A 2D Poisson-Schrödinger/3D Monte Carlo simulation study
36. Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels
37. Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs
38. (Invited) Modelling and Simulation of Advanced Semiconductor Devices
39. Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs
40. Z^\textsf 2 -FET as Capacitor-Less eDRAM Cell For High-Density Integration.
41. A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs
42. Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS
43. Scaling and intrinsic parameter fluctuations in nanoCMOS devices
44. Time-Dependent 3-D Statistical KMC Simulation of Reliability in Nanoscale MOSFETs
45. 3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET
46. Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs.
47. Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis
48. Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs
49. Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs
50. Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’ simulation
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