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In defiance with the meager tally of craniosynostosis, the surgical treatment of non syndromic craniosynostosis is one of the most common stratagem detained by craniofacial surgeon. By dint of the onerous anatomy secondary to the imperfection in embryogenesis, a long haul of drill is required to obtain perfection in surgical sequel.1 With the advancement in neurosurgical gadgetry and improvement in agility of neurosurgical authority, a multitude of strategy has evolved over time with the eminent intent to bring forth the supreme aftermath. Browsing through the archives of craniofacial reconstruction discloses vault remodeling techniques evolving over time with disparate modification tactics to the inception of state-of-the-art strategies like endoscopic suturectomy, spring treatment and cranial vault distraction osteogenesis.2 Regardless of all these alternatives, we still resort to the standard cranial vault remodeling with a fairly approving outcome. We herein attempt to disclose our result of vault remodeling in a series of patients with craniosynostosis.

Due to urbanization, there is an increasing need for infrastructure and services, leading to pressure on the sewage system. As a result, water contamination and sewage-related illnesses are emerging. On-site sanitary facilities are insufficient, and current sewage systems are outdated, causing freshwater contamination and diseases such as typhoid, malaria, etc. Untreated domestic sewage/wastewater, mining waste, industrial wastewater, agricultural waste, and other contaminants are polluting most aquatic ecosystems worldwide, leading to harm to surface water bodies, sewage drainage systems, surface water, and groundwater. Various sewage disposal methods are discussed, but they are not sustainable. The UN proposed Sustainable Development Goals (SDGs) in response to the need for sustainability and the effects of pollution and population growth. SDG 6 aims to ensure equitable access to safe and affordable drinking water, sanitation, and hygiene. It also includes goals to enhance water quality, increase water usage efficiency, develop integrated water resource management, and restore aquatic ecosystems. Efficient sewage disposal is crucial to reduce detrimental effects on the environment and public health. It is necessary to emphasize SDGs to protect the environment sustainably. It is crucial for the international community to work together to find effective and sustainable solutions to the problem of sewage management.

Disparities in the public sector motivate individuals to seek healthcare in the private sector even though the real cost exceeds their expectations in Bangladesh. Performance standard and service quality are critical concerns while considering the situation. After observing a lack of research, the researchers initiated this study to analyze the significant cost differences within the private healthcare industry in Chittagong, Bangladesh. The study also intends to apply a SERVQUAL framework to assess customer experiences in private healthcare sector in the mentioned area. The primary data was collected through a customized questionnaire. The findings will contribute to policymaking as well as benefit the public health stakeholders, healthcare workers, sincere learners, practitioners, and academia.

‘PSB Portal’ is a micro-service digital platform which primarily connects funding needs of Micro, Small and Medium Enterprises (MSMEs) to Banks for business. It is a strategic initiative of SIBDI with five other Public Sector Banks and was launched by Government of India, in November 2018, to provide loans to MSMEs of up to Rs.1 crore. The main motive of this initiative is to ease the process of fund availability to MSMEs and decrease the turnaround time of credit delivery to MSME sector. The new ‘PSB portal’ also makes it possible to provide timely finance at reasonable and competitive rates of interest to MSME sector. MSME sector forms a vital component of the economy in terms of their contribution to employment generation, exports and inclusive growth. One-third of the country's GDP is contributed by more than 50 million MSMEs in India. Thus, the role of MSMEs in the economic and social development of the country is not to be over-looked. There is need for finance that meets the life-cycle needs of MSMEs with a strong oversight mechanism in Banks to see that MSME-related lending policies are implemented at the operating level, is high. Such measures by the Government would serve the purpose of ease of access to funding requirements of MSME’s and also help open new avenues for Banks to increase their business while tapping new customers thereby increasing their priority sector assets. It will make formal banking more inclusive and deepen the roots of financial inclusion via digitization in the economy. After almost after a year of this initiative, on September 5 2019, Retail products (Home Loan Personal Loan and Auto Loan) were also added to the portal to increase the ease of credit to retail customers to further facilitate purchasing power in the economy. This paper will analyse the challenges faced by the Bankers while financing MSMEs via PSB portal and the reasons for rejection of the applications with further prospects of the scheme.

Planar-gate 2.3 kV 4H-SiC power MOSFETs were successfully fabricated in a commercial foundry with the gate oxide thickness reduced from 55 to 27 nm for the first time. Results of numerical simulations demonstrate acceptable gate oxide electric field despite the increased blocking voltage. For a gate bias of 15 V, the measured specific ON-resistance ( ${R}_{\mathrm {ON},\text {sp}}$ ) and high-frequency figures-of-merit (FOM[ ${R}_{\mathrm {ON}} \times {C}_{\text {gd}}$ ], FOM[ ${R}_{\mathrm {ON}} \times {Q}_{\text {gd}}$ ]) were improved by a factor of $1.3\times $ by reducing the gate oxide thickness even at the larger blocking voltage. Analytical modeling shows that the channel and accumulation layer resistances are still important contributors even at this larger blocking voltage capability. Operating the 27 nm gate oxide devices with the commonly accepted ON-state gate oxide electric field of 4 MV/cm for reliable operation makes the ${R}_{\mathrm {ON},\text {sp}}$ and FOMs for the 27 nm gate oxide case 10% worse than the 55 nm gate oxide case. However, the reduced gate bias of 11 V for the 27 nm gate oxide case reduces input switching power loss in half from a gate drive perspective. In addition, operation at this gate bias makes the saturation current for the 27 nm gate oxide devices three times smaller than for the conventional devices operating at a gate bias of 20 V, which will proportionally increase short-circuit withstand time.

In this paper, underpricing of Initial Public Offerings across thirteen different sectors in the Indian stock market have been analyzed, during the period 2010–2020 (Data available till 31st October 2020). A sample of 129 companies, having an issue size greater than INR 100 crores, was examined and analyzed through IPO listing gains, weighted mean, standard deviation and coefficient of variation. The study shows that Retail, FMCG and Consumer Durables industry was underpriced the most while Engineering, Construction and Infrastructure industry issues were underpriced the least or overpriced. It was also found that Initial Public Offerings (IPOs) could be a window to make immediate gains in a very short period of time if thorough analysis of the issues and the market conditions is performed. Furthermore, it was observed that the first day return of the companies varies highly and cannot be fairly predicted by the weighted average first day return of the respective sector.

Neural stimulation with infrared radiation has been explored for brain tissue, peripheral nerves, and cranial nerves including the auditory nerve. Initial experiments were conducted at wavelengths between λ = 1850 and λ = 2140 nm and the radiant energy was delivered with square pulses. Water absorption of the infrared radiation at λ = 1860 nm is similar to absorption at wavelengths between λ = 1310 and λ = 1600 nm, which are in the radiation wavelength range used for the communication industry. Technology for those wavelengths has already been developed and miniaturized and is readily available. The possibility of the infrared light to evoke compound action potentials (CAP) in the cochlea at λ = 1,375, λ = 1,460, and λ = 1550 nm was explored and compared to that of λ = 1860 nm in guinea pigs. Furthermore, rise and fall times of the 100 μs long pulses were changed and four basic pulse shapes (square, triangular, ramp-up, and ramp-down) were explored in their ability to evoke a CAP. In animals with pure tone threshold averages (PTAs) above 70 dB SPL, the results show that the favorable wavelength is λ = 1460 nm to reach threshold for stimulation and λ = 1375 nm or λ = 1460 nm for obtaining maximum amplitude. The most favorable pulse shape is either ramp-up or triangular.

This article presents the potential of Internet-of-Things (IoT) in the area of greenhouse farming and leading to the smart agriculture. The different parameters, such as humidity, water nutrients solution level, pH and electrical conductivity (EC) value, temperature, UV light intensity, CO2 level, mist, and amount of insecticides or pesticides, are monitored through various sensors so that significant knowledge can be captured and early fault detection and diagnosis can be done. A decision support system (DSS) acts as the central operating system that governs and coordinates all the activities. Furthermore, this work also accounts for the different challenges of greenhouse rose farming and highlights a new IoT-based solution, which is smart and sustainable. The model presented in this work is well adapted to the changing environment, thereby redefining the terms of sustainability.

Background Neonatal sepsis is considered a ubiquitous worldwide cause of mortality and morbidity in newborn infants. The incidence is 10-50 per 1000 live births. Neutrophil to lymphocyte ratio (NLR) is an easily accessible and cost-effective hematological marker for prompt diagnosis of neonatal sepsis. Aim and objectives The purpose of this study was to analyze the clinical significance of NLR in neonates clinically diagnosed with sepsis and its impact on the management. Methods This retrospective study was conducted on 265 neonates diagnosed with sepsis and compared with 341 healthy controls. The statistical analysis was performed by using the Student's t-test to compare the variables. Result Median NLR levels were significantly higher in patients than in controls. NLR had a modest power of predicting neonatal sepsis, as suggested by an area under a curve of 0.569. Conclusion NLR is an important predictor of neonatal sepsis. There is a significant modest positive correlation between NLR and sepsis.

Planar 650-V 4H-silicon carbide (SiC), inversion-channel, 55-nm gate oxide junction barrier Schottky field effect transistors (JBSFETs) with three types of cells are compared in this article for the first time. Devices with linear, hexagonal, and octagonal layouts were fabricated in a commercial foundry. The JBS diode was integrated within each cell type. The Schottky contact width for the JBS diode was adjusted to optimize third-quadrant ON-state voltage drop to below 2.5 V for each cell type to ensure by-passing the body diode while maintaining good blocking characteristics in the first quadrant. The hexagonal cell case was the only one whose breakdown voltage (560 V) fell below the 650-V rating. The highest breakdown voltage (710 V) was observed with the octagonal cell layout with a low leakage current of 10 nA at 600 V. The lowest specific ON-resistance was observed for the hexagonal cell design. However, its gate–drain charge was twice that of the conventional linear cell design and four times that of the octagonal cell design. The data from this work demonstrate that the best overall performance for the 650-V SiC, inversion-channel, 55-nm gate oxide junction barrier Schottky field effect transistors is achieved by using the octagonal cell design.

Advanced SiC planar-gate power MOSFET s have been successfully manufactured in a 6-inch commercial foundry with device structures optimized for operation with gate drive voltage of 10 V, compatible with gated drive voltage for Si superjunction products. The electrical characteristics of three advanced SiC MOSFET options are described in this article and compared with those of a state-of-the art Si superjunction MOSFET . The new advanced SiC power MOSFET s are demonstrated to exhibit superior on -state and switching losses with significantly better body-diode reverse recovery performance. Their short-circuit withstand time is also found to be significantly longer than typical commercially available planar-gate SiC power MOSFET s. These improved characteristics make the advanced SiC power MOSFET s suitable replacements for Si superjunction transistors to enhance high frequency circuit performance.

Blazars are a class of AGN, one of their jets is pointed towards the earth. Here, we report about the multi-wavelength study for blazar S5 1803+78 between MJD 58727 to MJD 59419. We analysed $\gamma$-ray data collected by Fermi-LAT, X-ray data collected by Swift-XRT \& NuSTAR, optical photons detected by Swift-UVOT \& TUBITAK observatory in Turkey. Three flaring states are identified by analysing the $\gamma$-ray light curve. A day scale variability is observed throughout the flares with the similar rise and decay times suggesting a compact emission region located close to the central engine. Cross-correlation studies are carried out between $\gamma$-ray, radio, and X-ray bands, and no significant correlation is detected. The $\gamma$-ray and optical emission are significantly correlated with zero time lag suggesting a co-spatial origin of them. A significant positive correlation between the R-I index and the V magnitude is observed. The broadband spectral energy distributions (SEDs) modeling was performed for all the flaring episodes as well as for one quiescent state for comparison. SEDs are best fitted with the synchrotron-self Compton (SSC) model under a one-zone leptonic scenario. The SED modeling shows that to explain the high flaring state strong Doppler boosting is required., Comment: 13 pages, 14 figures, 4 tables, Accepted in MNRAS

The performance of four cell topologies is compared for 2.3-kV 4H-SiC power MOSFETs fabricated in a commercial 6-in foundry. The devices were simultaneously manufactured with the same channel length (0.5 $ {\mu } \text{m}$ ), JFET width (1.1 $ {\mu } \text{m}$ ), and gate oxide thickness (55 nm) for comparison. In addition, an octagonal cell design with a JFET width of 1.5 $ {\mu } \text{m}$ was included for comparison. The square and hexagonal cell designs had the lowest specific ON-resistance, but their breakdown voltage was found to be reduced below 2.3 kV due to sharp cell corners. The smallest reverse transfer capacitance and gate charge were observed for the octagonal cell design with significantly larger (~5 $\times $ ) values for the square and hexagonal designs. The high-frequency figure-of-merit HF-FOM[ ${R}_{\mathrm{\scriptscriptstyle ON}}{\ast } {C}_{\text {rss}}$ ] for the octagonal cell design was $3.5\times $ superior to the hexagonal and square cells and $1.5\times $ better than the linear cell. Its high-frequency figure-of-merit HF-FOM[ ${R}_{\mathrm{\scriptscriptstyle ON}} {\ast } {Q}_{\text {gd}}$ ] was $1.5\times $ superior to the hexagonal and square cells and $1.2\times $ better than the linear cell. This work demonstrates that the square and hexagonal cells are the best for low-frequency applications, whereas the octagonal cell design is the most suitable for achieving the best high-frequency performance of 2.3-kV 4H-SiC power MOSFETs.

World is moving fast and is being more connected. Thus as to be ready for future upgrades we must bring in new technologies and use it for better understanding and protection. In the following paper we will discuss about protection of transformer using microcontroller based relays and the store therespective analyzed data on the closed cloud network for real time monitoring, controlling of devices and future updation. This paper deals with real time monitoring of voltage levels, oil levels, and temperature of transformer and gas sensors. Minimum and maximum values are set for each parameter mentioned. These devices will continuously compare both set values with values at that particular instant, if any of the equipment shows disturbance in the values then error message will be displaye

This paper compares the static and dynamic performance of 1.2 kV 4H-SiC ACCUFETs and INVFETs with identical channel length (0.5 μm) and gate oxide thickness (55 nm). It is demonstrated for the first time that ACCUFETs have lower total switching losses in comparison to the INVFETs. ACCUFETs are therefore superior devices for applications due to their lower specific on-resistance and overall switching losses. However, short circuit tests conducted on the devices show that ACCUFETs have a smaller short-circuit time (tSC) in comparison the INVFETs due to their higher short-circuit current.

2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs manufactured with the same cell-pitch and process to quantify the improved performance. The gate charge and high-frequency figures-of-merit (HF-FOM) of the 2.3 kV SG-MOSFETs were experimentally verified to be a factor of 1.8x better than that of the conventional MOSFETs with no difference in specific on-resistance.

Grid interface power conversion systems for commercial, industrial and residential solar power generation are becoming ubiquitous due to the competitive cost of solar energy. The AC/DC dual active bridge (DAB) converter is an upcoming topology in industrial PV energy and energy storage applications, providing bidirectional power transfer and galvanic isolation. In this paper, the properties of a DAB-type converter are leveraged to propose a design optimization process. It can optimize the high-frequency RMS current, size of magnetic elements and zero-voltage-switching (ZVS) region of the converter. The resulting design is compared against that derived from a conventional approach. In addition, an algorithm to compute the harmonic currents at the DC and line frequency AC ports of the system is proposed, and the respective filter designs are presented. The optimized design of the AC/DC DAB converter is implemented using the newly developed, 1200 V, $46 \mathrm{m}\Omega$, four quadrant, SiC-based monolithic bidirectional FETs (BiDFET). Experimental results from the 2.3 kW, $400\mathrm{V}/277\mathrm{V}_{{\mathrm {RMS}}}$ hardware prototype are finally presented to verify the design process.

We report three AstroSat observations of BL Lacertae object OJ 287. The three observations caught it in very different flux states that are connected to different broadband spectral states. These observations trace the source spectral evolution from the end-phase of activity driven by a new, additional HBL like emission component in 2017 to its complete disappearance in 2018 and re-emergence in 2020. The 2017 observation shows a comparatively flatter optical-UV and X-ray spectrum. Supplementing it with the simultaneous NuSTAR monitoring indicates a hardening at the high-energy-end. The 2018 observation shows a harder X-ray spectrum and a sharp decline or cutoff in the optical-UV spectrum, revealed thanks to the Far-UV data from AstroSat. The brightest of all, the 2020 observation shows a hardened optical-UV spectrum and an extremely soft X-ray spectrum, constraining the low-energy peak of spectral energy distribution at UV energies -- a characteristic of HBL blazars. The contemporaneous MeV-GeV spectra from LAT show the well-known OJ 287 spectrum during 2018 but a flatter spectrum during 2017 and a hardening above ~1 GeV during 2020. Modeling broadband SEDs show that 2018 emission can be reproduced with a one-zone leptonic model while 2017 and 2020 observations need a two-zone model, with the additional zone emitting an HBL radiation., 2 figures, 7 pages