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The nanoscale electric potential distribution in a gallium arsenide single p–n junction cell under artificial illumination, or the photovoltaic (PV) effect, was investigated using in situ electron holography with a transmission electron microscope. A custom-made specimen holder with biasing and illumination capabilities was used for this purpose. To determine the practical potential of the specimen prepared by a focused ion beam (FIB), the thickness of active layers that directly contribute to the PV effect was accurately derived by analyzing the results of in situ biasing electron holography. In situ light-illumination electron holography directly visualized the PV effect in the cell, where the potential difference between the p and n regions decreased with the increase in the intensity of light illumination. Using PV simulations, in conjunction with some reasonable assumptions regarding the practical specimen parameters in the FIB-milled specimen, we can generate a credible explanation of the experimental result. These findings will help to fully understand the PV effect in various types of solar cells, including perovskite and quantum dot cells. [ABSTRACT FROM AUTHOR]

In this study, a noise-reduction technique for series low-dose electron holograms using tensor decomposition is demonstrated through simulation. We treated an entire dataset of the series holograms with Poisson noise as a third-order tensor, which is a stack of 2D holograms. The third-order tensor, which is decomposed into a core tensor and three factor matrices, is approximated as a lower-rank tensor using only noise-free principal components. This technique is applied to simulated holograms by assuming a p-n junction in a semiconductor sample. The peak signal-to-noise ratios of the holograms and the reconstructed phase maps have been improved significantly using tensor decomposition. Moreover, the proposed method was applied to a more practical situation of time-resolved in situ electron holography by considering a nonuniform fringe contrast and fringe drift relative to the sample. The accuracy and precision of the reconstructed phase maps were quantitatively evaluated to demonstrate its effectiveness for in situ experiments and low-dose experiments on beam-sensitive materials. [ABSTRACT FROM AUTHOR]

Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p–n junction and clarify how local band structures, depletion layer widths and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices. [ABSTRACT FROM AUTHOR]

Phase-shifting electron holography (PS-EH) using a transmission electron microscope (TEM) was applied to visualize layers with different concentrations of carriers activated by Si (at dopant levels of 1019, 1018, 1017 and 1016 atoms cm−3) in n -type GaN semiconductors. To precisely measure the reconstructed phase profiles in the GaN sample, three electron biprisms were used to obtain a series of high-contrast holograms without Fresnel fringes generated by a biprism filament, and a cryo-focused-ion-beam (cryo-FIB) was used to prepare a uniform TEM sample with less distortion in the wide field of view. All layers in a 350-nm-thick TEM sample were distinguished with 1.8-nm spatial resolution and 0.02-rad phase-resolution, and variations of step width in the phase profile (corresponding to depletion width) at the interfaces between the layers were also measured. Thicknesses of the active and inactive layers at each dopant level were estimated from the observed phase profile and the simulation of theoretical band structure. Ratio of active-layer thickness to total thickness of the TEM sample significantly decreased as dopant concentration decreased; thus, a thicker TEM sample is necessary to visualize lower carrier concentrations; for example, to distinguish layers with dopant concentrations of 1016 and 1015 atoms cm−3. It was estimated that sample thickness must be more than 700 nm to make it be possible to detect sub-layers by the combination of PS-EH and cryo-FIB. [ABSTRACT FROM AUTHOR]

The innate electric potentials in biased p- and n-type GaAs compound semiconductors and the built-in potential were successfully measured with high accuracy and precision by applying in situ phase-shifting electron holography to a wedge-shaped GaAs specimen. A cryo-focused-ion-beam system was used to prepare the 35°-wedge-shaped specimen with smooth surfaces for a precise measurement. The specimen was biased in a transmission electron microscope, and holograms with high-contrast interference fringes were recorded for the phase-shifting method. A clear phase image around the p–n junction was reconstructed even in a thick region (thickness of ~700 nm) at a spatial resolution of 1 nm and precision of 0.01 rad. The innate electric potentials of the unbiased p- and n-type layers were measured to be 12.96 ± 0.17 V and 14.43 ± 0.19 V, respectively. The built-in potential was determined to be 1.48 ± 0.02 V. In addition, the in situ biasing measurement revealed that the measured electric-potential difference between the p and n regions changed by an amount equal to the voltage applied to the specimen, which indicates that all of the external voltage was applied to the p–n junction and that no voltage loss occurred at the other regions. [ABSTRACT FROM AUTHOR]

This study investigates equilibrium-to-nonequilibrium solid phase transitions induced by MeV-scale electron irradiation in B2-CoTi and L12-Co3Ti intermetallic compounds by means of high-voltage electron microscopy. Under MeV-scale electron irradiation, B2-CoTi transforms into a body-centered cubic solid solution through chemical disordering and eventually transforms into an amorphous phase. The critical temperature for amorphisation is found to be 110 K. L12-Co3Ti also exhibits chemical disordering at temperatures below 700 K. However, its amorphisation does not occur even at a low temperature of 20 K. The dominant factor in these solid phase transitions is discussed in terms of the Gibbs free energy. [ABSTRACT FROM PUBLISHER]

Highlights: [•] Solid-state amorphization (SSA) of Ti-rich intermetallic compounds (Ti>50at.%) was investigated. [•] SSA of C11b–Ti2Pd under MeV electron irradiation was observed by high-voltage electron microscopy. [•] Decomposition of C11b–Ti2Pd to bct solid solution occurred prior to SSA. [Copyright &y& Elsevier]

Highlights: [•] The irradiation-induced phase transition in Cr2M (M=Ti and Al) was investigated. [•] Cr2Ti transforms into amorphous phase and then changes to b.c.c. crystalline phase. [•] Cr2Al directly changes to b.c.c. phase without forming an amorphous phase. [•] Crystalline-to-amorphous-to-crystalline (C–A–C) transition was observed in Cr2Ti. [•] Dominant factors for C–A–C transition were discussed on the basis of phase diagram. [ABSTRACT FROM AUTHOR]

Conductive niobium carbide (NbC) nanowires with diameters of 1–3 nm were synthesized within the inner space of carbon nanotubes (CNTs) by exposing the CNTs to niobium (V) chloride vapor through hydrogen reduction. The NbC nanowires were found to have a NaCl-type crystal structure by transmission electron microscopy and transmission electron diffractometry. Results from electronic transport measurements imply that the electrical conductivity of the synthesized product was improved compared with that of empty CNTs. [ABSTRACT FROM AUTHOR]