1. Experimental study of grain boundary orientations in multi-crystalline silicon.
- Author
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Duffar, T., Nwosu, C. T., Asuo, I. M., Muzy, J., Chau, N. D. Q., Du Terrail-Couvat, Y., and Robaut, F.
- Subjects
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CRYSTAL grain boundaries , *ORIENTATION (Chemistry) , *NANOCRYSTALS , *SILICON , *ELECTRON backscattering , *SCANNING electron microscopy , *CRYSTAL growth - Abstract
Some peculiarities of straight and zig-zag grain boundaries in multi-crystalline Si ingots were analyzed by Scanning Electron Microscopy-Electron BackScatter Diffraction (SEM-EBSD) and Three Dimensional (3D) grain boundary reconstruction. In the cases where straight grain boundaries were perpendicular to facing {111} planes in the two neighboring grains, they were found parallel, within the measurement accuracy, to the bisector of the two facing {111} planes. This is in agreement with the theory predicting the existence of Facetted-Facetted grooves during the growth of multicrystalline Si. Another grain boundary was corresponding to the predicted Facetted-Rough groove. It was found that the zig-zag grain boundaries were successively composed of {111} twin planes and (...11)/(011) planes, so that the two grains are always in Σ3 relationship. The phenomenon leading to the formation mechanism for these boundaries remains a subject for research. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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