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Recently, it was stipulated in a publication that a missing elementary active-device termed "trancitor" by its designer could be made and could greatly simplify electronic circuits. This elementary device has been presented as a CCVS (Current Control Voltage Source), unlike a bipolar transistor which is a CCCS (Current Control Current Source). In the present paper, the electrical behavior of the CCVS-type trancitor in Silicon (Si), Germanium (Ge), Gallium arsenide (GaAs), Silicon Carbide (3C-SiC and 6H-SiC), Indium Nitride (InN) and Indium Phosphide (InP) technologies have been studied. The input-output transfer characteristics (Ix-Vy) of the p-type and n-type CCVS trancitors have been investigated. In addition, the effect of doping concentration on the n-type CCVS trancitor in Si technology has been studied. This study is based on TCAD (Technology Computer Aided Design) simulation. The results show that the Hall voltage of the CCVS trancitor depends on the electrical properties of the semiconductor material, such as carrier mobility (µ), band gap (Eg) and hole/electron effective mass (m). Moreover, these trancitors are compatible with the model proposed for the first time. The CCVS trancitor proved its worth in semiconductor technologies as well as being a missing active device that satisfies Moore's law. [ABSTRACT FROM AUTHOR]

The effects of temperature on the electrical properties of double gate DG-MOSFETs transistors in 4H-SiC and 6H-SiC technologies have been investigated and compared with single gate SG-MOSFET transistor using 130nm technology and BSIM3v3 model. In which the equivalent electronic circuits have been used for the two models (Series and Parallel) of the DG-MOSFET transistor. The current-voltage-temperature (I-V-T), transconductance-temperature (gm-T) and On/Off current ratio-temperature (ION/IOFF-T) characteristics have shown that the DG-MOSFETs are strongly affected by the temperature variation, especially the SG-MOSFET and DG-MOSFETs in 6H-SiC, as well as the DG-MOSFET transistor (Parallel model) in different semiconductor technologies is very sensitive to temperature variation compared to other transistors. The results obtained allowed the ability to predict the thermal behaviour of these transistors, and how effective are these devices in the very high temperature applications in a range from -200°C to 650°C. In addition, these transistors operate under low voltage and low power. [ABSTRACT FROM AUTHOR]

In robotic applications, the correct execution of a task can be a challenge for robotics experts. Therefore, it is necessary to implement a robust control structure for trajectory tracking. This paper proposes a robust control design to track the trajectory of an industrial robot via a fractional order PID controller with the Computed Torque Control (CTC) technique based on the Grey Wolf Optimizer (GWO). To examine the proposed robust control, the Fanuc 710ic/70 robot manipulator model is used as a case study. To begin with, the dynamic formulation of the robot is described. Then, with respect to the control design, the CTC controller that helps overcome the nonlinearity problem of the system is designed to improve the tracking performance. It is proposed to combine the fractional order PID with the CTC technique. This hybridization increases the performance of the control strategy and overcomes external disturbances, sensor noise suppression and especially input control constraints. Typically, FOPID controller parameters are set without considering the constraints of the actuator control inputs. Therefore, it affects its performance over time. To solve this problem, the controller parameters are updated online and optimized according to the input constraints using the GWO technique. The effectiveness of the proposed control strategy is demonstrated by the simulation results in terms of stability, trajectory tracking and compliance with limited inputs. [ABSTRACT FROM AUTHOR]