Effect of Temperature on Electrical Behavior of 4H-SiC and 6H-SiC Double-Gate (DG) MOSFETs in 130nm Technology.

The effects of temperature on the electrical properties of double gate DG-MOSFETs transistors in 4H-SiC and 6H-SiC technologies have been investigated and compared with single gate SG-MOSFET transistor using 130nm technology and BSIM3v3 model. In which the equivalent electronic circuits have been used for the two models (Series and Parallel) of the DG-MOSFET transistor. The current-voltage-temperature (I-V-T), transconductance-temperature (gm-T) and On/Off current ratio-temperature (ION/IOFF-T) characteristics have shown that the DG-MOSFETs are strongly affected by the temperature variation, especially the SG-MOSFET and DG-MOSFETs in 6H-SiC, as well as the DG-MOSFET transistor (Parallel model) in different semiconductor technologies is very sensitive to temperature variation compared to other transistors. The results obtained allowed the ability to predict the thermal behaviour of these transistors, and how effective are these devices in the very high temperature applications in a range from -200°C to 650°C. In addition, these transistors operate under low voltage and low power. [ABSTRACT FROM AUTHOR]