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This paper discusses the optimization of series resistance of nonplanar metal-insulator-metal capacitor, i.e., an original 3-D capacitor with a capacitance density of 35 nF/mm², used in very large scale integration. A fully analytical and physically based model of its series resistance versus material and geometrical parameters has been developed, in excellent agreement with both 3-D numerical simulations and experiments. Based on the modeling results, possible design strategies of series-resistance reduction are suggested; showing a reduction of the series resistance by approximately a factor of four, without any degradation of the capacitance density. [ABSTRACT FROM AUTHOR]

Comprehensive 3-D simulations have been carried out and compared with experimental data highlighting the dominant sources of statistical variability in 32-nm high-\kappa/\metal gate MOSFET technology. The statistical variability sources include random discrete dopants, line edge roughness, and metal gate granularity. Their relative importance is highlighted in the numerical simulations. Excellent agreement is achieved between the simulated and measured standard deviation of the threshold voltage. [ABSTRACT FROM PUBLISHER]