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198 results on '"Balboni, R"'

1. Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography

Author

Mafakheri, E., Tavabi, A. H., Lu, P. -H., Balboni, R., Venturi, F., Menozzi, C., Gazzadi, G. C., Frabboni, S., Sit, A., Dunin-Borkowski, R. E., Karimi, E., and Grillo, V.

Subjects
Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Free electron beams that carry high values of orbital angular momentum (OAM) possess large magnetic moments along the propagation direction. This makes them an ideal probe for measuring the electronic and magnetic properties of materials, and for fundamental experiments in magnetism. However, their generation requires the use of complex diffractive elements, which usually take the form of nano-fabricated holograms. Here, we show how the limitations of focused ion beam milling in the fabrication of such holograms can be overcome by using electron beam lithography. We demonstrate experimentally the realization of an electron vortex beam with the largest OAM value that has yet been reported (L = 1000h\bar), paving the way for even more demanding demonstrations and applications of electron beam shaping.

Published
2016
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7. Strain Analysis in Submicron Electron Devices by Convergent Beam Electron Diffraction

Author

Armigliato, A., Balboni, R., Frabboni, S., Benedetti, A., Cullis, A. G., Beig, R., editor, Englert, B. -G., editor, Frisch, U., editor, Hänggi, P., editor, Hepp, K., editor, Hillebrandt, W., editor, Imboden, D., editor, Jaffe, R. L., editor, Lipowsky, R., editor, v. Löhneysen, H., editor, Ojima, I., editor, Sornette, D., editor, Theisen, S., editor, Weise, W., editor, Wess, J., editor, Zittartz, J., editor, Watanabe, Yoshio, editor, Salviati, Giancarlo, editor, Heun, Stefan, editor, and Yamamoto, Naoki, editor

Published
2002
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14. Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon

Author

Bisero, D., Corni, F., Frabboni, S., Tonini, R., Ottaviani, G., and Balboni, R.

Subjects
Ion implantation -- Research, Substitution reactions -- Research, Silicon crystals -- Research, Physics
Abstract

A study was conducted to examine growth kinetics associated with the displacement field of hydrogen implanted single crystalling silicon. Displaced atoms were annealed at 350 degrees C and determined by a channeling method. Results indicated that the displacement field is thermally activated by an activation energy of 0.50 plus or minus 0.05 eV. Findings also suggested that the limiting process could be correlated with the release of hydrogen atoms bound to defects.

Published
1998

23. Observation of nanoscale magnetic fields using twisted electron beams

Author

Grillo V., Harvey T.R., Venturi F., Pierce J.S., Balboni R., Bouchard F., Gazzadi G.C., Frabboni S., Tavabi A.H., Li Z.-A., Dunin-Borkowski R.E., Boyd R.W., McMorran B.J., and Karimi E.

Subjects
ORBITAL ANGULAR-MOMENTUM, VORTEX BEAMS, MONOPOLES, TOMOGRAPHY, GENERATION, MICROSCOPY, SCALE, LIGHT
Abstract

Electron waves give an unprecedented enhancement to the field of microscopy by providing higher resolving power compared to their optical counterpart. Further information about a specimen, such as electric and magnetic features, can be revealed in electron microscopy because electrons possess both a magnetic moment and charge. In-plane magnetic structures in materials can be studied experimentally using the effect of the Lorentz force. On the other hand, full mapping of the magnetic field has hitherto remained challenging. Here we measure a nanoscale out-of-plane magnetic field by interfering a highly twisted electron vortex beam with a reference wave. We implement a recently developed holographic technique to manipulate the electron wavefunction, which gives free electrons an additional unbounded quantized magnetic moment along their propagation direction. Our finding demonstrates that full reconstruction of all three components of nanoscale magnetic fields is possible without tilting the specimen.

Published
2017
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24. Li+ions diffusion coefficient in V2O5:MoO3Sol-Gel films

Author

Cholant, C. M., primary, Azevedo, C. F., additional, Caldeira, I., additional, Balboni, R. D. C., additional, Moura, E. A., additional, Westphal, T. M., additional, Pawlicka, A., additional, Berton, M. A. C., additional, Gomez, J. A., additional, and Avellaneda, C. O., additional

Published
2017
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25. Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography

Author

Mafakheri, E., primary, Tavabi, A. H., additional, Lu, P.-H., additional, Balboni, R., additional, Venturi, F., additional, Menozzi, C., additional, Gazzadi, G. C., additional, Frabboni, S., additional, Sit, A., additional, Dunin-Borkowski, R. E., additional, Karimi, E., additional, and Grillo, V., additional

Published
2017
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26. Electrochemical, UV-Vis, and microscopical characteristics of sol-gel CeO2:V2O5 thin film.

Author

Balboni, R. D. C., Lemos, R. M. J., Moura, E. A., Cholant, C. M., Azevedo, C. F., Caldeira, I. M., Gündel, A., Flores, W. H., Pawlicka, A., and Avellaneda, C. O.

Subjects
THIN films, METALLIC oxides, SPECTROMETRY, SOLID state electronics, OXIDES
Abstract

Cerium dioxide (CeO2) and cerium dioxide doped with vanadium pentoxide (CeO2:V2O5) were synthesized from sol-gel precursors and deposited by spin coating on a conductive glass substrate (FTO). The films with different concentration of dopant and number of deposited layers were studied throughout cyclic voltammetry (CV), chronoamperometry/chronocoulometry, atomic force microscopy (AFM), scanning electron microscopy (SEM), and UV-Vis spectroscopy. The best value of charge density of 18.9 mC cm−2 was obtained for CeO2 doped with 15 mol% of V2O5 film. The chemical diffusion coefficient of lithium ions into CeO2 was 1.73 × 10−12 and CeO2:V2O5 15 mol% 6.75 × 10−13 cm2 s−1. This film presented 79% of transparency in UV-Vis and 5% color change under ± 1.3 V of applied potentials. Structural analyses revealed its homogeneous surface and the root mean-squared roughness (RMS) value of 9.42 nm. Based on the obtained results, CeO2 doped with 15 mol% V2O5 film is a promising thin coating for the use in electrochromic devices as a passive counter-electrode. [ABSTRACT FROM AUTHOR]

Published
2018
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29. Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx

Author

Frabboni S, Grillo V, Gazzadi GC, Balboni R, Trotta R, Polimeni A, Capizzi M, Martelli F, Rubini S, Guzzinati G, and Glas F

Subjects
Condensed Matter::Materials Science, STRAIN-MEASUREMENT, RESOLUTION, CBED PATTERNS, MICROSCOPY, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, PARAMETERS
Abstract

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.

Published
2012
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33. Growth and Characterization of Si Nanodot Multilayers in SiC Matrix

Author

Summonte, C., Mirabella, S., Balboni, R., Desalvo, A., Crupi, I., Simone, F., and Terrasi, Antonio

Subjects
Advanced Photovoltaics, New Types of Cells and Modules
Abstract

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 730-733, Preliminary experimental results on the fabrication and characterization of Si nanodot multilayers embedded in SiC matrix are presented. Nanometric Si crystals are obtained by thermal annealing of hydrogenated SiCx/SiC multilayers deposited by PECVD onto (001) Si and fused quartz substrates. The samples have been investigated by Transmission Electron Microscopy, Scanning Electron Microscopy, X-ray diffraction, IR optical absorption and UV-VIS-near IR transmittance. Although Si nano-dots formation requires high temperature thermal annealing, we show as the initial low temperature thermal annealing for H out-diffusion is a critical step of the fabrication process.

Published
2008
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38. Li ions diffusion coefficient in V 2 O 5 :MoO 3 Sol-Gel films.

Author

Cholant, C. M., Caldeira, I., Balboni, R. D. C., Westphal, T. M., Avellaneda, C. O., Azevedo, C. F., Moura, E. A., Pawlicka, A., Berton, M. A. C., and Gomez, J. A.

Subjects
LITHIUM ions, VANADIUM pentoxide, THIN films, SOL-gel materials, DIFFUSION coefficients, CYCLIC voltammetry
Abstract

Present work shows results of Li+ions insertion and extraction from vanadium pentoxide doped with 5 mol% of molybdenum trioxide (V2O5:MoO3) thin films. The characterizations were performed by cyclic voltammetry (CV), potentiostatic intermittent titration technique (PITT), and electrochemical impedance spectroscopy (EIS). The obtained results revealed Li+diffusional behavior for anodic and cathodic processes, and it was found that Li+diffusion coefficient (D) values obtained from CV, PITT, and EIS varied from 10−10to 10−12cm2s−1. Finally, a diffusion of Li+process was modeled by solving Fick equation with constant D in plane sheet geometry. [ABSTRACT FROM PUBLISHER]

Published
2017
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44. SEMEIOTICA MEDICA DELL'ABUSO SESSUALE NEI BAMBINI PREPUBERI: REQUISITI E RACCOMANDAZIONI

Author

Aprile, Anna, Balboni, R., Baldini, G., Bellora, M. G., Baronciani, D., Borrelli, F., Bova, M. A., Bruni, M., Cattaneo, C., Certosino, M. R., Fadda, N., Furani, S., Dei, M., DI TOMMASO, M., Gabutti, D., Gentilomo, A., Giolito, M. R., Kusterman, A., Loroni, L., Mazzei, A., Motta, T., Negro, F., Offidani, C., Ragazzon, F., Ruspa, M., and Vero, I. G.

Published
2003

45. Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

Author

Senez, V., Armigliato, A., De Wolf, I., Carnevale, G., Balboni, R., Frabboni, S., Benedetti, A., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Istituto per la Microelettronica e i Microsistemi [Bologna] (IMM), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), STMicroelectronics [Agrate Brianza] (ST-AGRATE), Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia (UNIMORE), and University of Sheffield [Sheffield]

Subjects
[SPI.MECA.MSMECA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Materials and structures in mechanics [physics.class-ph], [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design homemade tool, IMPACT, is upgraded and optimized to yield strain fields in deep submicron complementary metal–oxide–semiconductor devices. Residual strain in the silicon substrate is measured with micro-Raman spectroscopy (μ-RS) and/or convergent beam electron diffraction (CBED) for large (25 μm) and medium size (2 μm), while only CBED is used for deep submicron STI (0.22 μm). We propose a methodology combining CBED and technology computer aided design (TCAD) with μ-RS to assess the accuracy of the CBED measurements and TCAD calculations on the widest structures. The method is extended to measure (by CBED) and calculate (by TCAD) the strain tensor in the smallest structures, out of the reach of the μ-RS technique. The capability of determining, by both measurement and calculation, the strain field distribution in the active regions of deep submicron devices is demonstrated. In particular, it is found that for these structures an elastoplastic model for Si relaxation must be assumed.

Published
2003
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46. Techniques for mechanical strain analysis in submicron structures : TEM/CBED, micro-Raman spectroscopy, X-RAY micro-diffraction and modelling

Author

de Wolf, I., Senez, V., Balboni, R., Armigliato, A., Frabboni, S., Cedola, A., Lagomarsino, S., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2003

48. Mechanical properties of thin film materials for the 2D numerical analysis of deep submicron CMOS technologies

Author

Senez, V., Carlotti, G., De Wolf, I., Balboni, R., Benedetti, A., Piccolo, D., Mastracchio, G., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2001

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