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X-ray, Raman scattering and infrared absorption studies of the microstructure and short-range order of hydrogenated amorphous silicon (a-Si:H) films grown by cathode heating method reveal dihydride (Si-H2) groups and not monohydride (Si-H) groups on the walls of microvoids. The high rf power application during the growth induces the growth of weak columnarlike structures. Comparison of the experimental results with light-soaked and initial photoresponses indicate the poor quality of microstructure and short-range order of the films.

Enhancing the rf power density facilitates the deposition of hydrogenated amorphous silicon films at increased growth rates, and gas phase polymerization in the plasma results in the formation of powder which is regulated. Cathode and anode are heated at the same time, and the temperature difference between the two is very less. Internal quantum efficiency calculations, infrared and optical vibrational spectroscopy, secondary photoconductivity and dark conductivity aid in examining the films.

The characteristics of the devices which are based on the hydrogenated amorphous silicon (a-Si:H) are affected by its structural properties. Secondary neutral mass spectroscopy, hydrogen evolution technique and photochemical deflection spectroscopy characterize the structural properties of the films. The results of the primary photocurrent data of a-Si:H Schottky barrier devices results are correlated to the obtained data. An optimum value exists between the rigidity of network and hydrogen content for the realization of the best film and device properties.

The microstructure and optoelectric properties of hydrogenerated amorphous silicon is affected by the substrate temperature, one of the different deposition parameters. The study involved the evaluation of a-Si:H materials deposited at high substrate temperatures. The electrical properties were studied with coplanar electrode structure as well as on schottky barrier devices. The results reveal that hydrogen motion has an active role in the annealing of light induced defects.

Investigates the degradation of tin-doped indium-oxide (ITO) thin films in glow-discharge plasmas of hydrogen and argon. Application of ITO; Details on the experiment; Discussion on the results.

Changes in the gap-state profile of phosphorus-doped hydrogenated amorphous silicon films subjected to light soaking and thermal quenching have been studied by isothermal capacitance transient spectroscopy. No suggestive changes due to thermal quenching are observed in the density-of-states distribution at least in the energy range 0.25–1.50 eV below the conduction-band edge (Ec). On the other hand, gap states are created in the range of 0.25–0.35 eV below Ec by light soaking, in addition to the conversion from deeper states located 1.0–1.2 below Ec to shallower states located 0.4–0.6 below Ec. These results suggest that the effects of light soaking and thermal quenching are apparently independent of each other. [ABSTRACT FROM AUTHOR]

We have determined the gap-state profiles of phosphorus-doped hydrogenated amorphous silicon before and after light soaking in a broader energy range [0.25–1.50 eV below the conduction-band edge (Ec) ] by using several variations of isothermal capacitance transient spectroscopy. It is found that gap states are created in the range of 0.25–0.35 eV below Ec, which are attributed to 31P-related hyperfine electron-spin-resonance centers. [ABSTRACT FROM AUTHOR]