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1. AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor...

Author

Hoke, W.E., Lyman, P.S., Mosca, J. J., McTaggart, R. A., Lemonias, P. J., Beaudoin, R. M., Torabi, A., Bonner, W. A., Lent, B., Chou, L.-J., and Hsieh, K. C.

Subjects
DOPED semiconductor superlattices, MOLECULAR beam epitaxy, ELECTRON mobility
Abstract

Reports on the growing of double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor on InGaAs substrates using molecular beam epitaxy. Use of strain compensated, AlGaInAs/GaAs superlattice for improved resistivity and breakdown; Obtaining of electrical and optical properties; Growing of PHEMT structures to reduce strain.

Published
1997
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