Search

Your search keyword '"Bedarev, D. A."' showing total 32 results
Start Over Author "Bedarev, D. A."
32 results on '"Bedarev, D. A."'

13. Formation of GaAsN nanoinsertions in a GaN matrix

Author

Tsatsul’nikov, A. F., primary, Krestnikov, I. L., additional, Lundin, W. V., additional, Sakharov, A. V., additional, Bedarev, D. A., additional, Usikov, A. S., additional, Ber, B. Ya., additional, Tret’yakov, V. V., additional, Alferov, Zh. I., additional, Ledentsov, N. N., additional, Hoffmann, A., additional, Bimberg, D., additional, Riemann, T., additional, Christen, J., additional, Musikhin, Yu. G., additional, Soshnikov, I. P., additional, Litvinov, D., additional, Rosenauer, A., additional, Gerthsen, D., additional, and Plaut, A., additional

Published
2001
Full Text
View/download PDF

18. Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition

Author

Krestnikov, I. L., Ledentsov, N. N., Mikhail Maximov, Bimberg, D., Bedarev, D. A., Kochnev, I. V., Lantratov, V. M., Cherkashin, N. A., Musikhin, Yu G., Alferov, Zh I., Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2000

19. Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures

Author

Musikhin, Yu. G., primary, Gerthsen, D., additional, Bedarev, D. A., additional, Bert, N. A., additional, Lundin, W. V., additional, Tsatsul’nikov, A. F., additional, Sakharov, A. V., additional, Usikov, A. S., additional, Alferov, Zh. I., additional, Krestnikov, I. L., additional, Ledentsov, N. N., additional, Hoffmann, A., additional, and Bimberg, D., additional

Published
2002
Full Text
View/download PDF

22. 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Author

Mikhrin, S S, primary, Zhukov, A E, additional, Kovsh, A R, additional, Maleev, N A, additional, Ustinov, V M, additional, Shernyakov, Yu M, additional, Soshnikov, I P, additional, Livshits, D A, additional, Tarasov, I S, additional, Bedarev, D A, additional, Volovik, B V, additional, Maximov, M V, additional, Tsatsul'nikov, A F, additional, Ledentsov, N N, additional, Kop'ev, P S, additional, Bimberg, D, additional, and Alferov, Zh I, additional

Published
2000
Full Text
View/download PDF

23. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

Author

Maximov, M. V., primary, Tsatsul’nikov, A. F., additional, Volovik, B. V., additional, Bedarev, D. A., additional, Egorov, A. Yu., additional, Zhukov, A. E., additional, Kovsh, A. R., additional, Bert, N. A., additional, Ustinov, V. M., additional, Kop’ev, P. S., additional, Alferov, Zh. I., additional, Ledentsov, N. N., additional, Bimberg, D., additional, Soshnikov, I. P., additional, and Werner, P., additional

Published
1999
Full Text
View/download PDF

24. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

Author

Zhukov, A. E., primary, Kovsh, A. R., additional, Maleev, N. A., additional, Mikhrin, S. S., additional, Ustinov, V. M., additional, Tsatsul’nikov, A. F., additional, Maximov, M. V., additional, Volovik, B. V., additional, Bedarev, D. A., additional, Shernyakov, Yu. M., additional, Kop’ev, P. S., additional, Alferov, Zh. I., additional, Ledentsov, N. N., additional, and Bimberg, D., additional

Published
1999
Full Text
View/download PDF

25. Reconstruction of the catalytic cracking installation at Ryazan Oil Refining Company.

Author

Lugovskoi, A. I., Solovkin, V. G., Kapustin, V. M., Bedarev, D. V., Ermakov, V. P., and Gazizova, E. I.

Subjects
CATALYTIC cracking, PETROLEUM refinery design & construction, BUSINESS planning, PETROLEUM refining
Abstract

The article offers information on the construction of catalytic cracking installation at Ryazan Oil Refining Co. in Russia. According to the article, Kedr-89 Co. manages the specification design of the plant, hydraulic calculations as well as documentation of the manufacturing procedure. In addition, the article notes that the process of the reconstruction was based on Russian standards. It also cites the design of the reconstruction procedure as well as the benefits gained by the company.

Published
2009
Full Text
View/download PDF

26. Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures.

Author

Blokhin, S. A., Smirnov, A. N., Sakharov, A. V., Gladyshev, A. G., Kryzhanovskaya, N. V., Maleev, N. A., Zhukov, A. E., Semenova, E. S., Bedarev, D. A., Nikitina, E. V., Kulagina, M. M., Maksimov, M. V., Ledentsov, N. N., and Ustinov, V. M.

Subjects
SEMICONDUCTORS, OXIDATION, RAMAN effect, SPECTRUM analysis, OPTOELECTRONIC devices, LASERS
Abstract

Raman scattering spectroscopy is used to study the process of selective oxidation of Al0.97Ga0.03As layers. Stresses arising in GaAs/(AlGa)xOy layers as a result of selective oxidation under different conditions are determined. The effects of local heating of the samples with laser radiation during measurements of the Raman signals, photoresist hardening resulting from the oxidation, and overoxidation are analyzed. The instrumentation and method of selective oxidation are optimized; as a result, arrays of vertical-cavity surface-emitting lasers are fabricated. The active region of these lasers is based on two InGaAs quantum wells with top oxidized and bottom semiconductor distributed Bragg reflectors. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]

Published
2005
Full Text
View/download PDF

27. Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.

Author

Maleev, N. A., Zhukov, A. E., Kovsh, A. R., Mikhrin, S. S., Ustinov, V. M., Bedarev, D. A., Volovik, B. V., Krestnikov, I. L., Kayander, I. N., Odnoblyudov, V. A., Suvorova, A. A., Tsatsul’nikov, A. F., Shernyakov, Yu. M., Ledentsov, N. N., Kop’ev, P. S., Alferov, Zh. I., and Bimberg, D.

Subjects
GALLIUM arsenide semiconductors, QUANTUM dots, HETEROSTRUCTURES
Abstract

A method is proposed for growing stacked InAs/InGaAs self-organized quantum dots on GaAs substrates. The technique allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 µm wavelength region. The influence of growth conditions on structural and optical characteristics was studied. The proposed structures show promise in developing vertical-cavity surface-emitting devices. [ABSTRACT FROM AUTHOR]

Published
2000
Full Text
View/download PDF

30. InGaAs Nanodomains Formed insitu on the Surface of (Al,Ga)As.

Author

Krestnikov, I. L., Cherkashin, N. A., Sizov, D. S., Bedarev, D. A., Kochnev, I. V., Lantratov, V. M., and Ledentsov, N. N.

Subjects
INTERMETALLIC compounds, CHEMICAL vapor deposition
Abstract

A new method for obtaining InGaAs nanodomains on the surface of GaAs or (Al,Ga)As is suggested. At the first stage, an InGaAs layer with a thickness above the critical value for dislocation formation is deposited onto the substrate surface by metalorganic CVD. Then the InGaAs film is coated with a thin AlAs layer and annealed at an elevated temperature. The "repulsion" of AlAs from plastically relaxed regions near dislocations and the high temperature stability of AlAs result in that evaporation is restricted to the regions containing defects. The self-organization effects favor the formation of an ordered array of coherent nanodomains that can be used for obtaining buried low-dimensional nanostructures and/or nanoheteroepitaxial inclusions. [ABSTRACT FROM AUTHOR]

Published
2001
Full Text
View/download PDF

31. Stresses in selectively oxidized GaAs/(AlGa)xOy structures

Author

Blokhin, S. A., Smirnov, A. N., Sakharov, A. V., Andrey Gladyshev, Kryzhanovskaya, N. V., Maleev, N. A., Zhukov, A. E., Semenova, E. S., Bedarev, D. A., Nikitina, E. V., Kulagina, M. M., Maksimov, M. V., Ledentsov, N. N., and Ustinov, V. M.

Catalog

Books, media, physical & digital resources
See catalog results