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We report on three novel vertical-cavity laser (VCL) structures for 1.55-mu m operation. Two of the structures utilize an n-type GalnAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer fusion or metamorphic epitaxial growth. The third employs two wafer-fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p mirror. Ali three VCLs use strained GalnAsP quantum welts as active material and achieve continuous-wave (cw) operation at room temperature or above. The single fused VCL operates up to 17 and 101 degrees C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reverse-biased tunnel junction for current injection. This laser achieves record high output power (1 mW) at room temperature and operates cw up to 45 degrees C. The double fused VCLs with a 10x10-mu m(2) active area operate cw up to 30 degrees C with threshold current as low as 2.5 mA and series resistance of 30 Omega. The emission spectra exhibit a single lasing mode polarized with 30-dB extinction ratio and a spectral linewidth of 150 MHz., QC 20100525

We report the fabrication of InP/air-gap Fabry-Perot resonant cavities with an improved tunability characteristic achieved through the micromachining of more flexible suspended InP beams. The micromechanical structures are electrostatically actuated. A tuning range of 55 nm is demonstrated for an actuation voltage of 12 V. The low leakage current, of less than 10 µA for a bias of up to 30 V, provides a low actuation power. The tunable air-gap cavities are fabricated by selective wet etching of InGaAs sacrificial layers. An FeCl3 based etchant is used to completely remove the InGaAs material without affecting the thickness of the InP layer. The anisotropy of the etch rate of InGaAs was also investigated and exploited in the micromachining process., Addresses: Chitica N, Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden. Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden. Univ Uppsala, Dept Mat Sci, S-75121 Uppsala, Sweden.

We have realised an all-epitaxial 1.55 Όm vertical cavity laser by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32-period p-doped (C) AlGaAs/GaAs top mirror onto a half-cavity structure consisting of a 50-period n-doped (Si) GaInAsP/InP bottom mirror and a 9 quantum well GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed at temperatures up to 40°C and at pulse lengths of 10 Όs up to 5°C. The minimum threshold current density at room temperature is 1.8 kA/cm2 for a device diameter of 55 Όm. Compared to nonoxidised laser diodes, the threshold current is markedly decreased in oxidised laser diodes. © 1999 Publication Board, Japanese Journal of Applied Physics., References: Margalit, N.M., Babic, D.I., Streubel, K., Mirin, R.P., Naone, R.L., Bowers, J.E., Hu, E.L., (1996) Electron. Lett., 32, p. 1675; Ohiso, Y., Amano, C., Itoh, Y., Tateno, K., Tadokoro, T., Takenouchi, H., Kurokawa, T., (1996) Electron. Lett., 32, p. 1483; Uchiyama, S., Yokouchi, N., Ninomiya, T., (1997) IEEE Photon. Techn. Lett., 9, p. 141; Streubel, K., Rapp, S., André, J., Wallin, J., (1996) IEEE Photon. Techn. Lett., 8, p. 1121; Piprek, J., (1995) Proc. SPIE, 2399; Tadokoro, T., Okamoto, H., Kohama, Y., Kawakami, T., Kurokawa, T., (1992) IEEE Photon. Techn. Lett., 4, p. 409; Imajo, Y., Kasukawa, A., Kashwa, S., Okamoto, H., (1990) Jpn. J. Appl. Phys., 29, pp. L1130; Fischer, M.A., Huag, Y.-Z., Dann, A.J., Elton, D.J., Harlow, M.J., Perrin, S.D., Reed, J., Adams, M.J., (1995) IEEE Photon. Technol. Lett., 7, p. 608; Streubel, K., Wallin, J., Landgren, G., Öhlander, U., Lourduoss, S., Kjebon, O., (1994) J. Cryst. Growth, 143, p. 7; Rapp, S., Piprek, J., Streubel, K., André, J., Wallin, J., (1997) J. Quantum Electron., 33, p. 1839; Rapp, S., Streubel, K., Dhollande, C., André, J., Rodniuez Messmer, E., Lourdudoss, S., (1997) Opt. Soc. Am., Trends in Optics and Photonics Series (OSA TOPS), 15, pp. 99-103; Salomonsson, F., Streubel, K., Bentell, J., Hammar, M., Keiper, D., Westphalen, R., Piprek, J., Behrend, J., (1998) J. Appl. Phys., 83, p. 768 NR 20140805

We have investigated the properties of wafer-fused Si-doped isotype hetero-junctions between GaAs and InP. Current/voltage measurements were conducted to study the influence of the doping concentrations on each side of the interface on the electrical conductivity. An almost ohmic behavior with a very low series resistance was obtained for the highest examined doping level on the GaAs side, whereas the doping concentration on the InP side was found to be of little significance. Fusion at different temperatures showed that the conductivity degrades significantly below 500°C, although mechanically stable junctions were obtained also at temperatures as low as 305°C. Secondary ion mass spectroscopy measurements showed no redistribution of Si, but indicated the presence of small amounts of C and Fe impurities at the interface., References: Liau, Mull, D.E., (1990) Appl. Phys. Lett., 56, p. 737; Lo, (1991) Appl. Phys. Lett., 58, p. 1961; Black, A., Zhu, Z.-H., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 927; Margalit, N.M., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 359; Salomonsson, F., (1998) J. Appl. Phys., 83, p. 768; Hammar, M., Proceedings of the 10th International Conference on Indium Phosphide and Related Materials (IPRM) '98, p. 801. , May 11-15, Tsukuba, Japan; Wada, H., Ogawa, Y., Kamijoh, T., (1993) Appl. Phys. Lett., 62, p. 738; Dudley, J.J., (1994), PhD dissertation, University of California, Santa BarbaraFarrow, R.F.C., (1974) J. Phys. D: Appl Phys., p. 2436; Sagalowicz, L., (1997) Phil. Mag. Lett., 76, p. 445 NR 20140805

We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron. © 1999 Publication Board, Japanese Journal of Applied Physics., References: Black, A., Hawkins, A.R., Margalit, N.M., Babic, D.I., Holmes, A.L., Chang Jr., Y.-L., Abraham, P., Hu, E.L., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 927; Zhu, Z.-H., Ejeckham, F.E., Qian, Y., Zhang, J., Zhang, Z., Christenson, G.L., Lo, Y.H., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 943; Qian, Y., Ahu, Z.H., Lo, Y.H., Huffaker, D.L., Dcppe, D.G., Hou, H.Q., Hammons, E.B., Tu, Y.K., (1997) Appl. Phys. Lett., 71, p. 25; Rapp, S., Salomonsson, F., Streubel, K., Mogg, S., Wennekes, F., Bentell, J., Hammar, M., (1999) Jpn. J. Appl. Phys., 38 (1 B); Margalit, N.M., Piprek, J., Zhang, S., Babic, D.I., Streubel, K., Mirin, R.P., Wesselman, J.R., Hu, E.L., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 359; Salomonsson, F., Streubel, K., Bentell, J., Hammar, M., Keiper, D., Westphalen, R., Piprek, J., Behrend, J., (1998) J. Appl. Phys., 83, p. 768; Babic, D.I., (1995), Ph.D. dissertation, University of California, Santa BarbaranoteSagalowicz, L., Rudra, A., Syrbu, A., Behrend, J., Salomonsson, F., Streubel, K., Hammar, M., Bentell, J., (1997) Philos. Mag. Lett., 76, p. 445; Wennekes, F., (1997), Diploma Thesis, Royal Institute of TechnologyNolte, D.D., (1989) Appl. Phys. Lett., 54, p. 259; Wada, H., Ogawa, Y., Kamijoh, T., (1993) Appl. Phys. Lett., 62, p. 738; Okuno, Y., Uomi, K., Aoki, M., Tsuchiya, T., (1997) IEEE J. Quantum Electron, 33, p. 959; Dudley, J.J., (1994), Ph.D. dissertation, University of California, Santa BarbaraFarrow, R.F.C., (1974) J. Phys. D: Appl. Phys., p. 2436 NR 20140805

The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 Όm diameter device, the threshold current is 6mA and the input threshold power is 21mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively. © IEE 1999., References: Piprek, J., High-temperature lasing of long-wavelength VCSELs: Problems and prospects (1997) Proc. SPIE, 3003, pp. 182-193; Uchiyama, S., Yokouchi, Y., Ninomiya, T., Continuous-wave operation up to 36°C of 1.3-Όm GaInAsP-InP vertical cavity lasers (1997) IEEE Photonics Technol. Lett., 9 (2), pp. 141-142; Margalit, N.M., Piprek, J., Zhang, S., Babic, D.I., Streubel, K., Mirin, R.P., Wesselman, J.R., Hu, E.L., 64°C continuous wave operation of 1.5 Όm vertical-cavity laser (1997) IEEE J. Sci. Topics Quantum Electron., 3 (2), pp. 359-365; Jayaraman, V., Geske, J.C., MacDougal, M.H., Peters, F.H., Lowes, T.D., Char, T.T., Uniform threshold current, continuous-wave, singlemode 1300nm vertical cavity lasers from 0 to 70°C (1998) Electron. Lett., 34 (14), pp. 1405-1406; Ohiso, Y., Amano, C., Itoh, Y., Tateno, K., Tadokoro, Takenouchi, H., Kurokawa, T., 1.55 Όm vertical-cavity surface-emitting lasers with wafer fused InGaAsP/InP-GaAs/AlAs DBRs (1996) Electron. Lett., 32 (16), pp. 1483-1485; Qian, Y., Zhu, Z.H., Lo, Y.H., Hoffaker, D.L., Deppe, D.G., Ho, H.Q., Hammons, B.E., Tou, Y.K., Submilliamp 1.3Όm vertical-cavity lasers with threshold current density of < 500A/cm2 (1997) Electron. Lett., 33 (12), pp. 1052-1054; Salet, P., Gabriot, F., Pagnod-Rossaiux, P.H., Plais, A., Deroum, E., Pasquier, J., Jacquet, J., Room-temperature pulsed operation of 1.3Όm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors (1997) Electron. Lett., 33 (24), pp. 1408-1409; Imayo, Y., Kasukawa, A., Kashwa, S., Okatomo, H., GaInAsP/ InP semiconductor multilayer reflector grown by metalorganic vapor phase deposition and its application to surface emitting laser diode (1990) Jpn. J. Appl. Phys., 29, pp. L1130-L1132; Fisher, M.A., Huag, Y.-Z., Dann, A.J., Elton, D.J., Harlow, M.J., Perrin, S.D., Reed, J., Adams, M.J., Pulsed electrrical operation of 1.5Όm vertical-cavity surface emitting lasers (1995) IEEE Photonics Technol. Lett., 29, pp. 608-610; R

We report on three novel vertical cavity laser (VCL) structures for 1.55 Όm operation. Two of the VCL structures utilize an n-type GaInAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer-fusion or metamorphic epitaxial growth. The third VCL employs two wafer fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p-mirror. All three VCLs use strained GaInAsP quantum wells as active material and achieve continuous-wave (CW) operation at room-temperature or above. The single fused VCL operates up to 17 °C and 101 °C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reversed biased tunnel junction for current injection. This laser achieves record high output power (1mW) at room temperature and operates CW up to 45 °C. The double fused VCLs with a 10×10 Όm2 active area operate CW up to 30 °C with threshold current as low as 2.5 mA and series resistance of 30 Ohms. The emission spectra exhibit a single lasing mode polarized with 30 dB extinction ratio and a spectral linewidth of 150 MHz., Sponsors: SPIE NR 20140805

We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high-temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17 °C and 101 °C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible., Correspondence Address: Salomonsson, P.; Royal Inst of Technology, Kista, Sweden NR 20140805

We report on the electrical and compositional characterization of wafer fused isotype heterojunctions between Zn, C or Si doped GaAs and Zn or Si doped InP. The junctions were characterized with current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentration of oxygen, carbon and iron., Sponsors: IEEE NR 20140805

We have realised all epitaxial 1.55Όm vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40°C and at pulse lengths of 10Όs up to 5°C. The minimum threshold current density at room temperature is 1.8kA/cm2 for a device diameter of 55Όm. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly., Sponsors: IEEE NR 20140805