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Suspended specimens of 2D crystals and their heterostructures are required for a range of studies including transmission electron microscopy (TEM), optical transmission experiments, and nanomechanical testing. However, investigating the properties of laterally small 2D crystal specimens, including twisted bilayers and air-sensitive materials, has been held back by the difficulty of fabricating the necessary clean suspended samples. Here we present a scalable solution that allows clean free-standing specimens to be realized with 100% yield by dry-stamping atomically thin 2D stacks onto a specially developed adhesion-enhanced support grid. Using this new capability, we demonstrate atomic resolution imaging of defect structures in atomically thin CrBr 3 , a novel magnetic material that degrades in ambient conditions.

Van der Waals heterostructures form a unique class of layered artificial solids in which physical properties can be manipulated through controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic-resolution transmission electron microscopy to reveal the lattice reconstruction in twisted bilayers of the transition metal dichalcogenides, MoS 2 and WS 2 . For twisted 3R bilayers, a tessellated pattern of mirror-reflected triangular 3R domains emerges, separated by a network of partial dislocations for twist angles θ < 2°. The electronic properties of these 3R domains, featuring layer-polarized conduction-band states caused by lack of both inversion and mirror symmetry, appear to be qualitatively different from those of 2H transition metal dichalcogenides. For twisted 2H bilayers, stable 2H domains dominate, with nuclei of a second metastable phase. This appears as a kagome-like pattern at θ ≈ 2°, transitioning at θ → 0 to a hexagonal array of screw dislocations separating large-area 2H domains. Tunnelling measurements show that such reconstruction creates strong piezoelectric textures, opening a new avenue for engineering of 2D material properties.

As a two-dimensional semimetal, graphene offers clear advantages for plasmonic applications over conventional metals, such as stronger optical field confinement, in situ tunability, and relatively low intrinsic losses. However, the operational frequencies at which plasmons can be excited in graphene are limited by the Fermi energy E F , which in practice can be controlled electrostatically only up to a few tenths of an electronvolt. Higher Fermi energies open the door to novel plasmonic devices with unprecedented capabilities, particularly at mid-infrared and shorter-wave infrared frequencies. In addition, this grants us a better understanding of the interaction physics of intrinsic graphene phonons with graphene plasmons. Here, we present FeCl 3 -intercalated graphene as a new plasmonic material with high stability under environmental conditions and carrier concentrations corresponding to E F > 1 eV. Near-field imaging of this highly doped form of graphene allows us to characterize plasmons, including their corresponding lifetimes, over a broad frequency range. For bilayer graphene, in contrast to the monolayer system, a phonon-induced dipole moment results in increased plasmon damping around the intrinsic phonon frequency. Strong coupling between intrinsic graphene phonons and plasmons is found, supported by ab initio calculations of the coupling strength, which are in good agreement with the experimental data.

The efficiency of flexible photovoltaic and organic light emitting devices is heavily dependent on the availability of flexible and transparent conductors with at least a similar workfunction to that of Indium Tin Oxide. Here we present the first study of the work function of large area (up to 9 cm(2)) FeCl3 intercalated graphene grown by chemical vapour deposition on Nickel, and demonstrate values as large as 5.1 eV. Upon intercalation, a charge density per graphene layer of 5 ⋅ 10(13) ± 5 ⋅ 10(12) cm(-2) is attained, making this material an attractive platform for the study of plasmonic excitations in the infrared wavelength spectrum of interest to the telecommunication industry. Finally, we demonstrate the potential of this material for flexible electronics in a transparent circuit on a polyethylene naphthalate substrate.

Transparent and flexible electrodes are widely used on a variety of substrates such as plastics and glass. Yet, to date, transparent electrodes on a textile substrate have not been explored. The exceptional electrical, mechanical and optical properties of monolayer graphene make it highly attractive as a transparent electrode for applications in wearable electronics. Here, we report the transfer of monolayer graphene, grown by chemical vapor deposition on copper foil, to fibers commonly used by the textile industry. The graphene-coated fibers have a sheet resistance as low as ~1 kΩ per square, an equivalent value to the one obtained by the same transfer process onto a Si substrate, with a reduction of only 2.3 per cent in optical transparency while keeping high stability under mechanical stress. With this approach, we successfully achieved the first example of a textile electrode, flexible and truly embedded in a yarn.

We present the first systematic study of the stability of the structure and electrical properties of FeCl3 intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman spectroscopy conclusively demonstrate the unforseen stability of this transparent conductor to a relative humidity up to 100% at room temperature for 25 days, to a temperature up to 150°C in atmosphere and to a temperature as high as 620°C in vacuum, that is more than twice higher than the temperature at which the intercalation is conducted. The stability of FeCl3 intercalated few-layer graphene together with its unique values of low square resistance and high optical transparency, makes this material an attractive transparent conductor in future flexible electronic applications.

We show the successful intercalation of large area (1 cm(2)) epitaxial few-layer graphene grown on 4H-SiC with FeCl3. Upon intercalation the resistivity of this system drops from an average value of ∼200 Ω/sq to ∼16 Ω/sq at room temperature. The magneto-conductance shows a weak localization feature with a temperature dependence typical of graphene Dirac fermions demonstrating the decoupling into parallel hole gases of each carbon layer composing the FeCl3 intercalated structure. The phase coherence length (∼1.2 μm at 280 mK) decreases rapidly only for temperatures higher than the 2D magnetic ordering in the intercalant layer while it tends to saturate for temperatures lower than the antiferromagnetic ordering between the planes of FeCl3 molecules providing the first evidence for magnetic ordering in the extreme two-dimensional limit of graphene.

We investigate the optoelectronic properties of novel graphene/FeCl3-intercalated few-layer graphene (FeCl3-FLG, dubbed graphexeter) heterostructures using photovoltage spectroscopy. We observe a prominent photovoltage signal generated at the graphene/FeCl3-FLG and graphene/Au interfaces, whereas the photovoltage at the FeCl3-FLG/Au interface is negligible. The sign of the photovoltage changes upon sweeping the chemical potential of the pristine graphene through the charge neutrality point, and we show that this is due to the photothermoelectric effect. Our results are a first step toward all-graphene-based photodetectors and photovoltaics.

Transparent conductors based on few-layer graphene (FLG) intercalated with ferric chloride (FeCl(3)) have an outstandingly low sheet resistance and high optical transparency. FeCl(3)-FLGs outperform the current limit of transparent conductors such as indium tin oxide, carbon-nanotube films, and doped graphene materials. This makes FeCl(3)-FLG materials the best transparent conductor for optoelectronic devices., (Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

We demonstrate the possibility to selectively reduce insulating fluorinated graphene to conducting and semiconducting graphene by electron beam irradiation. Electron-irradiated fluorinated graphene microstructures show 7 orders of magnitude decrease in resistivity (from 1 TΩ to 100 kΩ), whereas nanostructures show a transport gap in the source-drain bias voltage. In this transport gap, electrons are localized, and charge transport is dominated by variable range hopping. Our findings demonstrate a step forward to all-graphene transparent and flexible electronics.