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81 results on '"Borgarino, Mattia"'

1. Cryo-CMOS Multi-Frequency Modulator for 2-Qubit Controller.

Author

Badiali, Alessandro and Borgarino, Mattia

Subjects
QUBITS, CRYOELECTRONICS, QUANTUM computing, ELECTRONIC modulators, ON-chip charge pumps
Abstract

This paper addresses the design of a CMOS modulator to control two quantum bits. The proposed architecture offers several advantages that are addressed and discussed in this paper. The proposed architecture is investigated through both mathematical modeling and Verilog simulations. Moreover, the circuit was designed using the cryogenic Design Kit of the 130 nm SiGe BiCMOS technology of the IHP foundry. The observed agreement between the modeling, Verilog, and transistor-level simulations proves the physical feasibility of the proposed architecture. [ABSTRACT FROM AUTHOR]

Published
2024
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3. Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs

Author

Zagni, Nicolo, Verzellesi, Giovanni, Bertacchini, Alessandro, Borgarino, Mattia, Iucolano, Ferdinando, and Chini, Alessandro

Abstract

Dynamic on-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}{)}$ affects the stability of p-GaN power HEMTs. In Schottky-gate HEMTs, dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ is associated to either electron trapping at device surface or dynamic effects occurring in the buffer. However, in p-GaN HEMTs the floating p-GaN region can have an additional role on dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ , due to removal/injection of holes from/into the barrier with relatively long time constants, which can be erroneously interpreted as a reliability issue. In this letter, we present a model to explain the dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ due to surface-related effects in p-GaN power HEMTs. The model, called ‘hole virtual gate’, attributes the experimentally observed ${R}_{ \mathrm{\scriptscriptstyle ON}}$ instability due to negative/positive gate bias stress (NGS/PGS) to the charging/discharging of surface traps in the AlGaN barrier by the removal/injection of holes through the gate metal/p-GaN Schottky junction. We verify the validity of the model by means of calibrated numerical simulations, that correlate the activation energy ${E}_{\text {A}}~\approx ~0.4$ eV of both ${R}_{ \mathrm{\scriptscriptstyle ON}}$ increase/decrease during NGS/PGS to the thermal ionization energy of traps in the barrier.

Published
2024
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11. An empirical bipolar device nonlinear noise modeling approach for large-signal microwave circuit analysis

Author

Traverso, Pier Andrea, Florian, Corrado, Borgarino, Mattia, and Filicori, Fabio

Subjects
Noise -- Research, Microwave circuits -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

An empirical bipolar transistor nonlinear noise model for the large-signal (LS) noise analysis of microwave circuits is described. The model is derived according to the charge-controlled nonlinear noise behavioral modeling approach, and includes non-linearly controlled equivalent noise (EN) generators describing the low-frequency (LF) noise up-conversion encountered in LS RF operation. LS-modulated shot-noise sources and parametric LF noise in parasitic resistors are also taken into account for improved model accuracy. Details for the implementation of the proposed cyclostationary EN generators in the framework of a computer-aided design tool are presented. As an application example, a simplified version of the proposed nonlinear noise model for two GaInP--GaAs HBTs has been formulated and empirically characterized on the basis of both bias-dependent LF noise and phase-noise measurements. Measured and simulated noise performance of a monolithic voltage-controlled oscillator over a set of different operating conditions is shown for the validation of the proposed approach. Index Terms--Cyclostationary noise, low-frequency (LF) noise, low phase noise (LPN), noise up-conversion, nonlinear noise model.

Published
2006

12. Microwave large-signal effects on the low-frequency noise characteristics of GaInP/GaAs HBTs

Author

Borgarino, Mattia, Florian, Corrado, Traverso, Pier Andrea, and Filicori, Fabio

Subjects
Gallium arsenide semiconductors -- Design and construction, Bipolar transistors -- Design and construction, Electromagnetic noise -- Measurement, Microwave circuits -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

The effects of a microwave tone on the low-frequency noise properties of GaInP/GaAs heterojunction bipolar transistors are investigated both experimentally and through simulations, to ascertain which modulation strategy should be adopted for the low-frequency noise sources when they should face large signal conditions, as in the cases of oscillators and mixers. Experiments revealed that the application of a microwave tone on the base terminal reduces the magnitude of the base current and collector current fluctuation spectra.

Published
2006

13. The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs

Author

Borgarino, Mattia, Fausto, Fantini, Bary, Laurent;, Graffeuil, Jacques, Vescovi, Davide, Menozzi, Roberto, Monroy, A.; Laurens, M., and Plana, Robert

Subjects
Transistors -- Electric properties, Circuit design -- Testing, Noise generators (Electronics) -- Evaluation, Noise generators (Electronics) -- Electric properties, Circuit designer, Integrated circuit design, Business, Electronics, Electronics and electrical industries
Abstract

An original technique, based on a full noise characterization, to discriminate the low-frequency noise sources in modern sub-micron bipolar devices, is presented. It is demonstrated that the correlation resistance can reveal the presence of excess noise sources located in the extrinsic base region of the transistor.

Published
2002

14. Transimpedance amplifier-based full low-frequency noise characterization setup for si/SiGe HBTs

Author

Bary, Laurent, Borgarino, Mattia, Plana, Robert, Parra, Thierry, Kovacic, Stephen J., Lafontaine, Hugues, and Graffeuil, Jacques

Subjects
Bipolar transistors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

An experimental design for the direct full low-frequency noise characterization of Si/SiGe heterojunction bipolar transistors is presented. This design is based on current/voltage conversion through transimpedance amplifiers.

Published
2001

15. Reliability testing of InP HEMT's using electrical stress methods

Author

Zanden, Koen van der, Schreurs, Dominique M. M.-P., Menozzi, Roberto, and Borgarino, Mattia

Subjects
High-electron-mobility transistors -- Testing, Field-effect transistors -- Testing, Accelerated life testing -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

Three different electrical stress tests on InP-based high-electron mobility transistors (HEMTs) and their implications concerning reliability are discussed. Hot electron stress, RF overdrive stress and transmission line pulse measurements are investigated to fill a gap in this research area. Until now, reliability assessment of HEMTs has been mainly conducted using high-temperature accelerated stress experiments, while the field of purely electrical stressing has been relatively ignored.

Published
1999

16. Influence of surface recombination on the burn-in effect in microwave GaIn/GaAs HBT's

Author

Borgarino, Mattia, Plana, Robert, Delage, Sylvain Laurent, Fantini, Fausto, and Graffeuil, Jacques

Subjects
Bipolar transistors -- Research, Integrated circuits -- Passivation, Business, Electronics, Electronics and electrical industries
Abstract

The burn-in effect in microwave GaInP/GaAs heterojunction bipolar transistors for various dc current stresses is studied. Results show that the burn-in effect is caused by reduced surface recombination at the extrinsic base surface around the emitter parameter. Defects at the passivation/semiconductor interface are also associated with the recombination centers and that these centers are passivated by hydrogen atoms released from C-H complexes under stress. In addition, it is shown the reliability and electronic performance of ledge passivation technology is better compared to SiN passivation technology.

Published
1999

17. Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMTs

Author

Borgarino, Mattia, Menozzi, Roberto, Baeyens, Yves, Cova, Paolo, and Fantini, Fausto

Subjects
High-electron-mobility transistors -- Research, Gallium arsenide semiconductors -- Research, Electronics -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A large number of interesting applications have been discovered for three-terminal, gallium arsenide-based pseudo-morphic high electron mobility transistors or PHEMTs. Certain PHEMT devices designed for millimeter-wave, low-noise applications are tested for hot electron degradation, which is demonstrated in the hot electron stress on both the dc and rf characteristics.

Published
1998

20. Convertisseur de fréquences BiCMOS en bande K basé sur un mélange passif à faibles pertes

Author

Magnani, Alessandro, Epert, Thomas, Viallon, Christophe, Borgarino, Mattia, Parra, Thierry, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Università degli Studi di Modena e Reggio Emilia (UNIMORE), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia (UNIMORE)

Subjects
BiCMOS, mélangeur passif, Générateur d'impulsion, bande K, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

National audience; Ce papier présente la conception d'un convertisseur de fréquences doublement équilibré en bande K pour une conversion de 21GHz vers 1GHz. Pour piloter efficacement le mélangeur résistif constitué de 4 transistors nMOS " froids ", le signal d'oscillateur local (OL) est mis en forme par deux générateurs d'impulsion fonctionnant à 17,8GHz. Ce principe conduit à de faibles pertes de conversion, estimées à -2,1dB pour le mélangeur depuis des mesures indiquant un gain de conversion de 13,2dB pour le convertisseur complet. Ces résultats sont en accord avec les simulations électriques. Ce convertisseur a été réalisé avec la technologie BiCMOS SiGe 0,13 μm proposée par IBM.

Published
2013

25. Ku-Band PLL functional blocks

Author

Ducati, Fabio, Chiesi, Fabio, Dermit, Davide, Manni, G., Lucchi, P., Abdeljelil, F. B., Sala, F., Borgarino, Mattia, Jacquemod, G., Tatinian, W., Laboratoire d'Electronique, Antennes et Télécommunications (LEAT), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
PFD, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Ku-Band, CMOS, VCO, frequency divider, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2008

26. Ku-Band receiver functional blocks

Author

Ducati, Fabio, Chiesi, Fabio, Corciulo, N., Borgarino, Mattia, and Jacquemod, G.

Subjects
LNA, CMOS, Ku-band, mixer
Published
2008

40. Reliability of Gaas-based HBTs

Author

Fantini, Fausto, Borgarino, Mattia, Cattani, L., and Menozzi, R.

Subjects
reliability, GaAs, heterojunction bipolar transistor
Published
1998

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