1. Study of low-frequency charge pumping on thin stacked dielectrics
- Author
-
Jimmie J. Wortman, Eric M. Vogel, Veena Misra, N. Yang, J. Ganem, Jay Hauser, Pascal Masson, and C.E. Weintraub
- Subjects
Materials science ,business.industry ,Transistor ,Analytical chemistry ,Physics::Optics ,Chemical vapor deposition ,Dielectric ,Substrate (electronics) ,Electronic, Optical and Magnetic Materials ,law.invention ,Condensed Matter::Materials Science ,Rapid thermal processing ,law ,MOSFET ,Optoelectronics ,Electrical and Electronic Engineering ,Electric current ,business ,Quantum tunnelling - Abstract
The application of low-frequency charge pumping to obtain near-interface, or bulk trap densities, on thin stacked gate dielectrics is studied. A review of the theory governing the low-frequency charge pumping technique, developed to extract bulk trap densities from metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated with thick SiO/sub 2/ dielectrics, is given. In this study, the technique is applied to a series of n-channel MOSFETs fabricated with stacked gate dielectrics. The dielectric stacks were comprised of rapid thermal oxide (RTO) interface layers and rapid thermal chemical vapor deposited (RTCVD) oxynitride layers, which incorporated varying concentrations of nitrogen. The effect of DC tunneling currents on the technique is studied, and a procedure to remove these components from the measured substrate current is outlined. Distortions in the experimentally measured charge pumping current plotted as a function of gate bias is modeled and found to be due to the contribution of bulk traps. Finally, the limitations of applying a model that was originally developed for thick SiO/sub 2/ dielectrics to thin stacked gate dielectrics are discussed.
- Published
- 2001
- Full Text
- View/download PDF