105 results on '"Cai, Xiaowu"'
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2. A precision current sensing circuit with chopper amplifier of symmetric topology
3. SOI radiation-hardened 300 V half-bridge date driver IC design with high dv/dt noise immunity
4. An on-chip integrated current sensor with high precision and large current range for smart power ICs
5. Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio
6. A high reliability under-voltage lock out circuit for power driver IC
7. Design of compact-diode-SCR with low-trigger voltage for full-chip ESD protection
8. A simplified over-temperature protection structure for smart power ICs
9. A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs
10. Single-event burnout of LDMOS with polygon P+ structure
11. Design of a NMOS-triggered SCR for dual-direction low-voltage ESD protection
12. A Radiation-hardened Over-temperature Protection Circuit Using a Dynamic Comparison Technique
13. An Integrated Capacitor-Less LDO with Transient and Stability Enhancement
14. Novel application of CoAl-layered double hydroxide/reduced graphene oxide nanocomposite as a highly efficient cathode additive for nickel-based secondary batteries
15. CoAl-layered double hydroxide nanosheets-coated spherical nickel hydroxide cathode materials with enhanced high-rate and cycling performance for alkaline nickel-based secondary batteries
16. ZnAl-layered double hydroxide nanosheets-coated ZnO@C microspheres with improved cycling performance as advanced anode materials for zinc-based rechargeable batteries
17. Sublimed sulfur powders as novel effective anode additives to enhance the high-rate capabilities of iron anodes for advanced iron-based secondary batteries
18. Evolution of spent LiFePO4 powders into LiFePO4/C/FeS composites: A facile and smart approach to make sustainable anodes for alkaline Ni-Fe secondary batteries
19. Synergistic Effect of Negative Bias Instability and Total Ionizing Dose on SiC MOSFETs
20. A wide input range, external capacitor-less LDO with fast transient response
21. Fully Integrated 1.8 V Output 300 mA Load LDO with Fast Transient Response
22. A Radiation-Hardened Overtemperature Protection Circuit Using a Dynamic Comparison Technique
23. Market microstructure of the London Stock Exchange
24. Investigation on performance degradation mechanism of GaN p–i–n diode under proton irradiation
25. TID Effect of MOSFETs in SOI BCD Process and its Hardening Technique
26. SOI radiation-hardened 300 V half-bridge date driver IC design with high dv/dt noise immunity
27. An on-chip integrated current sensor with high precision and large current range for smart power ICs
28. Large piezoelectric response in a family of metal-free perovskite ferroelectric compounds from first-principles calculations
29. Fast-transient Capacitor-Less LDO in 0.18µm SOI Technology
30. A wide input range, external capacitor-less LDO with fast transient response
31. Novel Current-limiting and Short-circuit Protection Technology for Low-side Power Switch
32. A current reference with wide temperature operation range and low temperature drift
33. The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
34. Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device.
35. Evolution and mechanism of P-GaN films under proton irradiation and its influence on electronic device
36. A low leakage current Tunneling-FET based on SOI
37. Enhancing the High-Temperature and High-Rate Properties of Nickel Hydroxide Electrode for Nickel-Based Secondary Batteries by Using Nanoscale Ca(OH)2 and γ-CoOOH
38. Noise Immunity Improvement in High Voltage Gate Driver IC
39. Design of Power Clamp Circuit with Diode String and Feedback Enhanced Triggering in advanced SOI BCD Process
40. A low leakage current Tunneling-FET based on SOI
41. A novel area efficient ESD power clamp with feedback technology
42. Analysis of the area efficient transmission gate power clamp in 65nm CMOS process
43. Single-event burnout hardening of planar power MOSFET with partially widened trench source
44. Investigation of high voltage SCR-LDMOS ESD device for 150V SOI BCD process
45. Stabilization criterion of fractional-order PDμcontrollers for interval fractional-order plants with one fractional-order term
46. Analysis on vulnerability of power grid based on electrical betweenness with information entropy
47. Stabilization criterion of fractional-order PDμ controllers for interval fractional-order plants with one fractional-order term
48. Enhancing the High-Temperature and High-Rate Properties of Nickel Hydroxide Electrode for Nickel-Based Secondary Batteries by Using Nanoscale Ca(OH)2 and ?-CoOOH
49. Investigation of ESD second breakdown TCAD simulation
50. Analysis on vulnerability of power grid based on electrical betweenness with information entropy
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