35 results on '"Chakraborty, Partha S."'
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2. Evaluating Developmental Heterogeneity in Transplanted Human Intestinal Organoids
3. 710: SEROTONIN RECEPTOR 4 (5-HT4R) REGULATES CONTRACTILITY IN TRANSPLANTED HUMAN INTESTINAL ORGANOIDS WITH AN ENTERIC NERVOUS SYSTEM
4. Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors
5. 18F-Fluoride PET/CT for detection of bone metastasis in patients with renal cell carcinoma: a pilot study
6. 588 EPITHELIAL BARRIER FUNCTION IN TRANSPLANTED HUMAN INTESTINAL ORGANOIDS IS IMPROVED BY ENTERIC NERVOUS SYSTEM BUT NOT EPITHELIAL DEVELOPMENTAL MATURITY
7. Shallow source/drain extensions for deep submicron MOSFETs using spin-on-dopants
8. Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
9. An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology
10. Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs
11. On the potential of using SiGe HBTs on SOI to support emerging applications up to 300°C
12. Bias- and Temperature-Dependent Accumulated Stress Modeling of Mixed-Mode Damage in SiGe HBTs
13. A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs
14. Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology
15. On the Transient Response of a Complementary (npn $+$ pnp) SiGe HBT BiCMOS Technology
16. On the cryogenic performance of ultra-low-loss, wideband SPDT RF switches designed in a 180 nm SOI-CMOS technology
17. On the reliability of SiGe HBT cascode driver amplifiers
18. Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches
19. A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K
20. Low-loss, wideband SPDT switches and switched-line phase shifter in 180-nm RF CMOS on SOI technology
21. TCAD modeling of accumulated damage during time-dependent mixed-mode stress
22. Total Ionizing Dose Response of Triple-Well FET-Based Wideband, High-Isolation RF Switches in a 130 nm SiGe BiCMOS Technology
23. X-ray radiation effects in multilayer epitaxial graphene
24. Predictive TCAD modeling of the scaling-induced, reverse-biased, emitter-base tunneling current in SiGe HBTs
25. Wide temperature range compact modeling of SiGe HBTs for space applications
26. Improved 2-D regional transit time analysis for optimized scaling of SiGe HBTs
27. An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds
28. An investigation of electro-thermal instabilities in 150 GHz SiGe HBTs fabricated on SOI
29. Mixed-mode stress degradation mechanisms in pnp SiGe HBTs
30. Cryogenic RF Small-Signal Modeling and Parameter Extraction of SiGe HBTs
31. Modeling mixed-mode DC and RF stress in SiGe HBT power amplifiers
32. On the Transient Response of a Complementary (npn + pnp) SiGe HBT BiCMOS Technology.
33. 18F-Fluoride PET/CT for detection of bone metastasis in patients with renal cell carcinoma.
34. A 0.8 THz fMAX SiGe HBT Operating at 4.3 K.
35. Metastatic involvement of level IIb nodal station in oral squamous cell carcinoma: A clinicopathological study.
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