1. Initial stage of nitridation on Si(100) surface using low-energy nitrogen ion implantation
- Author
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Ki-Jeong Kim, Chan-Cuk Hwang, Chulho Jeon, Kyuwook Ihm, Tai-Hee Kang, and Bongsoo Kim
- Subjects
Materials science ,Annealing (metallurgy) ,Photoemission spectroscopy ,Analytical chemistry ,Surfaces and Interfaces ,Nitride ,Condensed Matter Physics ,Surface energy ,Surfaces, Coatings and Films ,chemistry.chemical_compound ,Ion implantation ,Silicon nitride ,chemistry ,Electron diffraction ,X-ray photoelectron spectroscopy ,Materials Chemistry - Abstract
The initial stage of the thermal nitridation on Si (1 0 0)-2 × 1 surface with the low-energy nitrogen ion (200 eV) implantation was studied by photoemission spectroscopy (PES). The formation of nitride was shown the different characteristics depending on the annealing temperature. The disordered surface at room temperature was changed to 2 × 1 periodicity with the low-energy electron diffraction (LEED) as increasing the nitridation temperature. By decomposition of Si 2p spectrum, we can identify the three subnitrides (Si1+, Si2+, and Si3+). By changing the take-off angle of the Si 2p, we can increase surface sensitivity and estimate that Si1+, Si2+ and Si3+ are the interface states.
- Published
- 2006