30 results on '"Clavel, Michael B."'
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2. Metal work function engineering on epitaxial (100)Ge and (110)Ge metal-oxide-semiconductor devices
3. High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States
4. Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures.
5. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors
6. High carrier lifetimes in epitaxial germanium–tin/Al(In)As heterostructures with variable tin compositions
7. Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure
8. Device Characterization of a Sulfur-Implanted p$^{++}$/p GaSb Photovoltaic Camel Diode
9. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors.
10. Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry
11. TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
12. Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy.
13. AIP Advances
14. TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
15. In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process
16. Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials
17. Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal–Oxide–Semiconductor Devices on AlAs/GaAs
18. Device Characterization of a Sulfur-Implanted p<inline-formula><tex-math notation="LaTeX">$^{++}$</tex-math></inline-formula>/p GaSb Photovoltaic Camel Diode
19. Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy
20. Band Offset Enhancement of a-Al2O3/Tensile-Ge for High Mobility Nanoscale pMOS Devices
21. An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultralow-Voltage Applications
22. Laser and transistor material on Si substrate
23. Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials.
24. Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy
25. Pushing the limits of silicon transistors
26. Performance Evaluation of Novel Strain-Engineered Ge-InGaAs Heterojunction Tunnel Field-Effect Transistors
27. Laser and transistor material on Si substrate
28. Pushing the limits of silicon transistors
29. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In x Al 1- x As Stressors.
30. In Situ SiO 2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO x Atomic Layer Deposition Process.
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