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With PASP Plus as its primary payload, the APEX satellite was launched by a standard Pegasus rocket released from a NASA B-52 aircraft on 3 August 1994. A 70 deg inclination, 363 km X 2550 km orbit was achieved, allowing both investigation of space plasma effects on high-voltage operation in the perigee region and investigation of space radiation effects on array power output from passage through the inner radiation belt in the apogee region. Data gathering by PASP Plus was begun on 7 Aug 94 and ended on 11 Aug 95. In one year, PASP Plus collected an order of magnitude more data on environmental interactions on solar arrays than all previous space-borne photovoltaic experiments combined. The test arrays flown and the interactions-measuring and space-environment sensors of PASP Plus are described. The results of measurements of leakage current under test-array positive biasing and arc rates under negative biasing as a function of bias voltage, plasma density, array orientation, and other conditions are presented. The results of measurements of test-array power-output degradation caused by space radiation are also examined.

The first two of a planned series of international workshops concerning space solar cell calibration and measurement techniques have been held within the past year. The need for these workshops arose from the increasing complexity of space solar cells coupled with the growing international nature of the market for space cells and arrays. The workshops, jointly sponsored by NASDA, ESA and NASA, have the objective of obtaining international agreement on standardized values for the AM0 spectrum and constant, recommendations for laboratory measurement practices and the establishment of a set of protocols for making interlaboratory comparison measurements. The results of the first two workshops, held in Waikiki, Hawaii, USA in 1994 and Madrid, Spain in 1995, are presented.

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.

Heteroepitaxial (InP/GaAs) and homo-epitaxial (InP/InP) cells were irradiated by 1-MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of open-circuit voltage.

Isochronal and isothermal annealing tests were performed on GaAs concentrator cells which were irradiated with electrons of various energies to fluences up to 1 x 10(exp 16) e/sq cm. The results include: (1) For cells irradiated with electrons from 0.7 to 2.3 MeV, recovery decreases with increasing electron energy. (2) As determined by the un-annealed fractions, isothermal and isochronal annealing produce the same recovery. Also, cells irradiated to 3 x 10(exp 15) or 1 x 10(exp 16) e/sq cm recover to similar un-annealed fractions. (3) Some significant annealing is being seen at 150 C although very long times are required.

Mission performance, mass, initial power, and cost are determined for solar electric propulsion vehicles across a range of payload masses, reference powers, and mission trajectories. Thick radiation shielding is added to arrays using indium phosphide or III-V multijunction solar cells to reduce the damage incurred through the radiation belts. Special assessments of power management and distribution systems, atmospheric drag, and energy storage are made. It is determined that atmospheric drag is of no great concern and that the energy storage used in countering drag is unnecessary. A scheme to package the arrays, masts, and ion thrusters into a single fairing is presented.

A concept is presented for an aerospace concentrator module with lightweight domed lenses and 30 percent AM0 efficient GaAs/GaSb tandem solar cell circuits. The performance of transparent GaAs cells is reviewed. NASA's high-altitude jet flight calibration data for recent GaSb cells assembled with bulk GaAs filters are reported, along with subsequent Boeing and NASA measurements of GaSb I-V performance at various light levels and temperatures. The expected performance of a basic two-terminal tandem concentrator circuit with three-to-one voltage matching is discussed. All of the necessary components being developed to assemble complete flight test coupons are shown. Straightforward interconnect and assembly techniques yield voltage matched circuits with near-optimum performance over a wide temperature range.

Thin-film AlGaAs-GaAs double-heterostructure concentrator cells were fabricated which exhibit total-area conversion efficiencies as high as 23.5 percent AM0 at 100 suns, 25 C. This is one of the best space concentrators measured to date at NASA and is designed for a thin-film cell without a prismatic coverglass. This solar cell structure consists of a GaAs/AlGaAs film less than 5 micron thick mounted to a glass cover/superstrate, with coplanar back-side contacts. The coverglass is not prismatic. The CLEFT process, a method for mechanically separating epitaxial layers from their substrate, is used to process these cells into thin films. The advantages of single-crystal GaAs are thereby retained, while reducing weight and cutting cost by allowing for substrate reuse. Thin-film cells also have better thermal management capabilities and can be stacked for use in tandem structures. Cell fabrication and performance are described, and directions for further improvements are identified.

The thermal annealing of GaAs concentrator cells after electron irradiation is reported. Results are given for cells annealed at 150, 200, and 250 C. Isochronal annealing was done for 20 min intervals up to 350 C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3 x 10 to the 15th or 1 x 10 to the 16th e/sq cm recover to similar unannealed fractions. Significant annealing is seen starting at 150 C, although very long times are required.

The effect of series and voltage-matched configurations on the performance of multijunction solar cells in a radiation environment was investigated. It was found that the configuration of the multijunction solar cell can have a significant impact on its radiation tolerence characteristics.

Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1-MeV electrons and 37-MeV protons. These cells are candidates for individual cells in a cascade structure. Data are presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AM0. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series-connected and separately connected structures are investigated.

Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area.

Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 1 MeV electrons at fluences up to 1 x 10 to the 15th electrons per square cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentrations were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4 mm diameter illuminated area.

Thin silicon cells with BSR's were irradiated with 1 MeV electrons on either the front or back side of the cell. There were two types of cells, a 10 ohm-cm with a BSF and a 0.15 ohm-cm without a BSF. Data on the electrical performance and reflectance are given for various fluence levels of 1 MeV electrons for both type cells and 10 MeV protons for the 10 ohm-cm cell.

Current-voltage curves were calculated for each cell in a cascade structure using a solar cell diode equation and superposition. Terms for the light generated current, diffusion current, space charge recombination current and series and shunt resistance are included. Individual current voltage curves are added in series with ohmic resistance losses for the cell interconnects to obtain the cascade cell performance. Temperature was varied with concentration, using several models, and ranged from 55 C at one Sun to between 80 and 200 C at 100 Suns. A variety of series resistance and internal resistances were used. Coefficients of the diffusion and recombination terms are strongly temperature dependent. The study indicates that maximum efficiency (30%) occurs in the 50 to 100X Sun concentration range, provided series resistance is below 0.015 ohm-sq cm and cell temperature is 80 C at 100 Suns.

The effect of having a slightly indirect top cell in a three junction cascade monolithic stack is calculated. The minority carrier continuity equations are utilized to calculate individual junction performance. Absorption coefficient curves for general III-V compounds are calculated for a variety of direct and indirect gap materials. The results indicate that for a small excursion into the indirect region, (about 0.1 eV), the loss of efficiency is acceptably small (less than 2.5 percent) and considerably less than attempting to make the top junction a smaller direct bandgap.

The optimum range of concentration in space for III-V cascade cells has been calculated using a realistic solar cell diode equation. Temperature was varied with concentration using several models and ranged from 55 deg at one sun to between 80 deg and 200 deg C at 100 suns. A variety of series resistance and internal resistances were used. Coefficients of the diffusion and recombination terms are strongly temperature dependent. The study indicates that the maximum efficiency of 30 percent occurs in the 50 to 100 X sun concentration range provided series resistance is below 0.015 ohm sq cm and cell temperature is about 80 C at 100 suns.

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

The measurement of the electrical performance characteristics of individual solar cells is discussed. One of the reasons is determination of the output power, measurement of the effect of various degradation mechanisms, and separation of cells by current and voltage for eventual use in series and parallel combinations. Major problem areas in making accurate performance measurements are the determination of the irradiance level during measurement, the measurement and control of cell junction temperature, and the contacting of the separate current and potential leads to the cell under test. Solar cells respond to only part of the solar spectrum, irradiance measurement made with blackbody detectors lead to spectral mismatch errors. The use of reference cells with a spectral response similar to that of the test cell reduces this error. Reference cells are calibrated at standard atmospheric conditions with all cells calibrated at the same conditions.

For abstract, see N77-26619.

For abstract, see N77-26620.

Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.

For abstract, see N77-26626.

The electrical characteristics of a high-power, long-lived, free-burning dc argon arc are presented. Empirical formulas relating voltage to current, electrode separation, and operating pressure are given for two types of cathodes: a typical point tip cathode and a cathode with a 1.27-cm-(0.5-in.-) diameter crater in the tip. Power was varied from 90 to 563 kW. A discussion of the cathode with the crater tip is given.

The spectral reflectance properties of electroplated and chemically converted zinc were measured for both chromate and chloride conversion coatings. The reflectance properties were measured for various times of conversion and for conversion at various chromate concentrations. The values of absorptance, alpha, integrated over the solar spectrum, and of infrared emittance, epsilon, integrated over black body radiation at 250 F were then calculated from the measured reflectance values. The interdependent variations of alpha and epsilon were plotted. The results indicate that the optimum combination of the highest absorptance in the solar spectrum and the lowest emittance in the infrared of the converted electroplated zinc is produced by chromate conversion at 1/2 concentration of the standard NEOSTAR chromate black solution for 0.50 minute or by chloride conversion for 0.50 minute.

The spectral reflectance properties of a commercially prepared black chrome over dull nickel, both plated on steel, for various plating times of the black chrome were measured. The plating current was 180 amperes per square foot. Values of absorptance integrated over the solar spectrum, and of infrared emittance integrated over black-body radiation at 250 F were obtained. It is shown that plating between one and two minutes produces the optimum combination of highest heat absorbed and lowest heat lost by radiation.

The present work describes briefly the design, construction, and operation of a low cost air mass 2 solar simulator, and then presents the performance characteristics of a modified version in terms of total irradiance, uniformity of irradiance, spectral distribution, and beam subtense angle. The simulator consists of an array of 143 tungsten halogen lamps and a corresponding array of 143 Fresnel lenses parallel and in front of the lenses, so that a 1.2 m by 1.2 m area is irradiated with uniform collimated irradiance. The performance of this 143-lamp version is compared with that of the 12-lamp prototype. It was found that the larger design required a lower lamp voltage for an equivalent average total irradiance in the test plane. However, distribution of total irradiance was not as good for the large simulator.

Tungsten halogen projection lamps have integral ellipsoidal reflector, and hexagonal shaped plastic Fresnel lenses. Reflector is dichroic coated to reduce infrared content of reflected radiation. Array of lamps and lenses produces uniform collimated beam having near AM2 spectrum and intensity that can be used for testing flat plate solar collectors.

A low cost air mass 2 solar simulator for testing flat-plate solar collectors was developed and operated at Lewis. Total cost was less than $10,800/sq m ($1000/sq ft). It consists of an array of 143 tungsten-halogen 300-watt lamps, each having integral dichroic coated reflectors. A second array of 143 respective hexagonal-shaped plastic Fresnel lenses are located approximately 1 focal length from the lamps. The simulator will produce a uniform collimated beam covering an area of 1.2 by 1.2m(4 by 4 ft). Design features, construction details, and component costs are given, as well as measured results on a 12-lamp prototype.

The feasibility of global calibration of terrestrial reference cells is discussed. A simple, accurate 'secondary' calibration technique based on ratios of test to reference cell currents measured in natural sunlight is described. Different techniques for monitoring incident irradiance during solar cell performance measurements are also examined and assessed, including the techniques of black-body detectors, calibrated reference cells, and the convolution of spectral response with solar irradiance.

Revised measurement and calibration procedures are available. ERDA workshop utilized experience gained in solar cell research to define and explore additional measurement needs of photovoltaic community. Interim measurement procedures previously established were revised and published in manual in addition to other procedures.

Current-voltage measurements have been made on terrestrial solar cell modules of the DOE/JPL Low Cost Silicon Solar Array procurement. Data on short circuit current, open circuit voltage, and maximum power for the four types of modules are presented in normalized form, showing distribution of the measured values. Standard deviations from the mean values are also given. Tests of the statistical significance of the data are discussed.

The effects of outdoor exposure were determined by comparing standard I-V data obtained for the as-received modules with similar data obtained after removal from the field and cleaning with detergent solution. All modules measured in this way exhibited nonrecoverable degradation in P sub maximum varying from 4 to 7 percent. One module exposed for 41 days exhibited partial cell discoloration, loss of front surface metallization over the discolored portion, and a decrease in P sub maximum of 7 percent, tentatively attributed to cell damage. Measurements before and after cleaning showed a recoverable degradation due to dirt accumulation. This recoverable loss in power was 11 percent after 245 days in the field for one brand of module, 6 percent after 48 days for another brand, and 4 1/2 percent for the third brand.

The effects of changing atmospheric parameters on the performance of a typical silicon solar cell were calculated. The precipitable water vapor content, airmass and turbidity were varied over wide ranges and the normal terrestrial distribution of spectral irradiance was studied. The cell short-circuit current was then computed for each spectral irradiance distribution using the cell spectral response. Data are presented in the form of calibration number (cell current/incident irradiance) vs. water vapor content or turbidity.

Effect of measurement error in spectral distribution of solar simulators

The spectral reflectance properties of black nickel electroplated over stainless steel and of black copper produced by oxidation of copper sheet were measured for various plating times of black nickel and for various lengths of time of oxidation of the copper sheet, and compared to black chrome over nickel and to converted zinc. It was determined that there was an optimum time for both plating of black nickel and for the oxidation of copper black. At this time the solar selective properties show high absorptance in the solar spectrum and low emittance in the infrared. The conditions are compared for production of optimum optical properties for black nickel, black copper, black chrome, and two black zinc conversions which at the same conditions had absorptances of 0.84, 0.90, 0.95, 0.84, and 0.92, respectively, and emittances of 0.18, 0.08, 0.09, 0.10, and 0.08, respectively.

Hemispherical total emittance and solar absorptance characteristics of thermal control coating systems in space nuclear power plant development

Thermal radiation parameter measurements of coating materials, using steady state heat balance method

Hemispherical total emittance and normal solar absorptance of selected materials at temperature range 280 to 600 degrees K - thermal radiation parameters