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The size of the bandgap in a photonic crystal ring is typically intuitively considered to monotonically grow as the modulation amplitude of the grating increases, causing increasingly large frequency splittings between the 'dielectric' and 'air' bands. In contrast, here we report that as the modulation amplitude in a photonic crystal ring increases, the bandgap does not simply increase monotonically. Instead, after the initial increase, the bandgap closes and then reopens again with the dielectric band and the air bands flipped in energy. The air and dielectric band edges are degenerate at the bandgap closing point. We demonstrate this behavior experimentally in silicon nitride photonic crystal microrings, where we show that the bandgap is closed to within the linewidth of the optical cavity mode, whose quality factor remains unperturbed with a value $\approx$ 1$\times$10$^6$ (i.e., linewidth of 2 pm). Moreover, through finite-element simulations, we show that such bandgap closing and band flipping phenomena exist in a variety of photonic crystal rings with varying units cell geometries and cladding layers. At the bandgap closing point, the two standing wave modes with a degenerate frequency are particularly promising for single-frequency lasing applications. Along this line, we propose a compact self-injection locking scheme that integrates many core functionalities in one photonic crystal ring. Additionally, the single-frequency lasing might be applicable to DFB lasers to increase their manufacturing yield., Comment: 7 pages, 4 figures

Frequency engineering of whispering-gallery resonances is essential in microcavity nonlinear optics. The key is to control the frequencies of the cavity modes involved in the underlying nonlinear optical process to satisfy its energy conservation criterion. Compared to the conventional method that tailors dispersion by the cross-sectional geometry, thereby impacting all cavity mode frequencies, grating-assisted microring cavities, often termed as photonic crystal microrings, provide more enabling capabilities through mode-selective frequency control. For example, a simple single period grating added to a microring has been used for single-frequency engineering in Kerr optical parametric oscillation (OPO) and frequency combs. Recently, this approach has been extended to multi-frequency engineering by using multi-period grating functions, but at the cost of increasingly complex grating profiles that require challenging fabrication. Here, we demonstrate a simple approach, which we term as shifted grating multiple mode splitting (SGMMS), where spatial displacement of a single period grating imprinted on the inner boundary of the microring creates a rotational asymmetry that frequency splits multiple adjacent cavity modes. This approach is easy to implement and presents no additional fabrication challenges than an un-shifted grating, and yet is very powerful in providing multi-frequency engineering functionality for nonlinear optics. We showcase an example where SGMMS enables OPO generation across a wide range of pump wavelengths in a normal-dispersion device that otherwise would not support OPO.

Single epitaxial quantum dots (QDs) embedded in nanophotonic geometries are a leading technology for quantum light generation. However, efficiently coupling their emission into a single mode fiber or Gaussian beam often remains challenging. Here, we use direct laser writing (DLW) to address this challenge by fabricating 1 $\mu$m diameter polymer nanowires (PNWs) in-contact-with and perpendicular-to a QD-containing GaAs layer. QD emission is coupled to the PNW's HE$_{11}$ waveguide mode, enhancing collection efficiency into a single-mode fiber. PNW fabrication does not alter the QD device layer, making PNWs well-suited for augmenting preexisting in-plane geometries. We study standalone PNWs and PNWs in conjunction with metallic nanoring devices that have been previously established for increasing extraction of QD emission. We report methods that mitigate standing wave reflections and heat, caused by GaAs's absorption/reflection of the lithography beam, which otherwise prevent PNW fabrication. We observe a factor of $(3.0 \pm 0.7)\times$ improvement in a nanoring system with a PNW compared to the same system without a PNW, in line with numerical results, highlighting the PNW's ability to waveguide QD emission and increase collection efficiency simultaneously. These results demonstrate new DLW functionality in service of quantum emitter photonics that maintains compatibility with existing top-down fabrication approaches., Comment: Comments welcomed

Micro-/nanocavities that combine high quality factor ($Q$) and small mode volume ($V$) have been used to enhance light-matter interactions for cavity quantum electrodynamics (cQED). Whispering gallery mode (WGM) geometries such as microdisks and microrings support high-$Q$ and are design- and fabrication-friendly, but $V$ is often limited to tens of cubic wavelengths to avoid WGM radiation. The stronger modal confinement provided by either one-dimensional or two-dimensional photonic crystal defect geometries can yield sub-cubic-wavelength $V$, yet the requirements on precise design and dimensional control are typically much more stringent to ensure high-$Q$. Given their complementary features, there has been sustained interest in geometries that combine the advantages of WGM and photonic crystal cavities. Recently, a `microgear' photonic crystal ring (MPhCR) has shown promise in enabling additional defect localization ($>$ 10$\times$ reduction of $V$) of a WGM, while maintaining high-$Q$ ($\approx10^6$) and other WGM characteristics in ease of coupling and design. However, the unit cell geometry used is unlike traditional PhC cavities, and etched surfaces may be too close to embedded quantum nodes (quantum dots, atomic defect spins, etc.) for cQED applications. Here, we report two novel PhCR designs with `rod' and `slit' unit cells, whose geometries are more traditional and suitable for solid-state cQED. Both rod and slit PhCRs have high-$Q$ ($>10^6$) with WGM coupling properties preserved. A further $\approx$~10$\times$ reduction of $V$ by defect localization is observed in rod PhCRs. Moreover, both fundamental and 2nd-order PhC modes co-exist in slit PhCRs with high $Q$s and good coupling. Our work showcases that high-$Q/V$ PhCRs are in general straightforward to design and fabricate and are a promising platform to explore for cQED., Comment: 7 pages, 4 figures

Continuous wave optical parametric oscillation (OPO) provides a flexible approach for accessing mid-infrared wavelengths between 2 $\mu$m to 5 $\mu$m, but has not yet been integrated into silicon nanophotonics. Typically, Kerr OPO uses a single transverse mode family for pump, signal, and idler modes, and relies on a delicate balance to achieve normal (but close-to-zero) dispersion near the pump and the requisite higher-order dispersion needed for phase- and frequency-matching. Within integrated photonics platforms, this approach results in two major problems. First, the dispersion is very sensitive to geometry, so that small fabrication errors can have a large impact. Second, the device is susceptible to competing nonlinear processes near the pump. In this letter, we propose a flexible solution to infrared OPO that addresses these two problems, by using a silicon nitride photonic crystal microring (PhCR). The frequency shifts created by the PhCR bandgap enable OPO that would otherwise be forbidden. We report an intrinsic optical quality factor up to (1.2 $\pm$ 0.1)$\times$10$^6$ in the 2 $\mu$m band, and use a PhCR ring to demonstrate an OPO with threshold power of (90 $\pm$ 20) mW dropped into the cavity, with the pump wavelength at 1998~nm, and the signal and idler wavelengths at 1937 nm and 2063 nm, respectively. We further discuss how to extend OPO spectral coverage in the mid-infrared. These results establish the PhCR OPO as a promising route for integrated laser sources in the infrared., Comment: 4 pages, 3 figures

Single solid-state quantum emitters offer considerable potential for the implementation of sources of indistinguishable single-photons, which are central to many photonic quantum information systems. Nanophotonic geometry optimization with multiple performance metrics is imperative to convert a bare quantum emitter into a single-photon source that approaches the necessary levels of purity, indistinguishability, and brightness for quantum photonics. We present an inverse design methodology that simultaneously targets two important figures-of-merit for high-performance quantum light sources: the Purcell radiative rate enhancement and the coupling efficiency into a desired light collection channel. We explicitly address geometry-dependent power emission, a critical but often overlooked aspect of gradient-based optimization of quantum emitter single-photon sources. We illustrate the efficacy of our method through the design of a single-photon source based on a quantum emitter in a GaAs nanophotonic structure that provides a Purcell factor $F_p=21$ with a 94% waveguide coupling efficiency, while respecting a geometric constraint to minimize emitter decoherence by etched sidewalls. Our results indicate that multi-objective inverse design can yield competitive performance with more favorable trade-offs than conventional approaches based on pre-established waveguide or cavity geometries., Comment: 9 pages, 3 figures

Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes, with dimensions up to about 260$\mu$m x 80$\mu$m, containing InAs quantum dots, onto a gold substrate. We show that the presence of a back reflector combined with the etching of micro-pillars significantly increases the extraction efficiency of quantum light, reaching photon fluxes, from a single quantum dot line, exceeding 8 x 10$^5$ photons per second, which is four times higher than the highest count rates measured, on the same chip, from emitters outside the pillars. Given the versatility and the ease of the process, this technique opens the path to the realisation of hybrid quantum and nano-photonic devices that can combine virtually any material that can be undercut to realise free-standing membranes that are then transferred onto any host substrate, without specific compatibility issues and/or requirements.

A central requirement for photonic quantum information processing systems lies in the combination of nonclassical light sources and low-loss, phase-stable optical modes. While substantial progress has been made separately towards ultra-low loss, $\leq1$ dB/m, chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report a significant advance towards this goal, in the hybrid integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic integrated circuit. We demonstrate triggered and pure single-photon emission directly into a Si$_3$N$_4$ photonic circuit with $\approx1$ dB/m propagation loss at a wavelength of $\approx920$ nm. These losses are more than two orders of magnitude lower than reported to date for any photonic circuit with on-chip quantum emitter sources, and $>50$ % lower than for any prior foundry-compatible integrated quantum photonic circuit, to the best of our knowledge. Using these circuits we report the observation of resonance fluorescence in the strong drive regime, a milestone towards integrated coherent control of quantum emitters. These results constitute an important step forward towards the creation of scaled chip-integrated photonic quantum information systems.

To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communication applications. In addition, fundamental studies of the radiative behavior of quantum emitters, including studies of coherence and blinking, benefit from such improved photon collection. Quantum dots grown via Stranski-Krastanov technique have shown to be good candidates for bright, coherent, indistinguishable quantum light emission. However, one of the challenges associated with these quantum light sources arises from the fact that the emission wavelengths can vary from one emitter to the other. To this end, broadband light extractors that do not rely on high-quality factor optical cavities would be desirable, so that no tuning between the quantum dot emission wavelength and the resonator used to increase the light extraction is needed. Here, we show that metallic nano-rings combined with gold back reflectors increase the collection efficiency of single photons and we study the statistics of this effect when quantum dots are spatially randomly distributed within the nano-rings. We show an average increase in the brightness of about a factor 7.5, when comparing emitters within and outside the nano-rings in devices with a gold back reflector, we measure count rates exceeding 7 x 10^6 photons per second and single photon purities as high as 85% +/- 1%. These results are important steps towards the realisation of scalable, broadband, easy to fabricate sources of quantum light for quantum communication applications., Comment: 5 pages, 4 figures

Traceability to the International System of Units (SI) is fundamental to measurement accuracy and reliability. In this study, we demonstrate subnanometer traceability of localization microscopy, establishing a metrological foundation for the maturation and application of super-resolution methods. To do so, we create a master standard by measuring the positions of submicrometer apertures in an array by traceable atomic-force microscopy. We perform correlative measurements of this master standard by optical microscopy, calibrating scale factor and correcting aberration effects. We introduce the concept of a localization uncertainty field due to optical localization errors and scale factor uncertainty, with regions of position traceability to within a 68 % coverage interval of +/- 1 nm. These results enable localization metrology with high throughput, which we apply to measure working standards that we fabricate by electron-beam lithography, validating the accuracy of mean pitch and closing the loop for disseminating and integrating reference arrays. We then apply our novel methods to calibrate an optical microscope with a sample cryostat, accounting for thermal contraction by use of a submicrometer pillar array in silicon as a reference material and elucidating complex distortion. This new calibration enables the accurate integration of quantum emitters and photonic structures with high yield, as we demonstrate theoretically through simulations of the dependence of the Purcell factor of radiative enhancement on registration errors across a wide field. Our study illuminates the challenges and opportunities of achieving traceable localization for comparison of position data across lithography and microscopy systems, from ambient to cryogenic temperatures.

Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There is strong evidence that these integrated technologies will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying laser and optical quantum technologies, with the required functionality and performance, can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration and a dramatic reduction in optical losses have enabled benchtop experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. The reduction in size, weight, power, and improvement in stability that will be enabled by QPICs will play a key role in increasing the degree of complexity and scale in quantum demonstrations. In the next decade, with sustained research, development, and investment in the quantum photonic ecosystem (i.e. PIC-based platforms, devices and circuits, fabrication and integration processes, packaging, and testing and benchmarking), we will witness the transition from single- and few-function prototypes to the large-scale integration of multi-functional and reconfigurable QPICs that will define how information is processed, stored, transmitted, and utilized for quantum computing, communications, metrology, and sensing. This roadmap highlights the current progress in the field of integrated quantum photonics, future challenges, and advances in science and technology needed to meet these challenges., Comment: Submitted to the Journal of Physics: Photonics

We demonstrate stable microresonator Kerr soliton frequency combs in a III-V platform (AlGaAs on SiO$_2$) through quenching of thermorefractive effects by cryogenic cooling to temperatures between 4~K and 20~K. This cooling reduces the resonator's thermorefractive coefficient, whose room-temperature value is an order of magnitude larger than that of other microcomb platforms like Si$_3$N$_4$, SiO$_2$, and AlN, by more than two orders of magnitude, and makes soliton states adiabatically accessible. Realizing such phase-stable soliton operation is critical for applications that fully exploit the ultra-high effective nonlinearity and high optical quality factors exhibited by this platform.

Semiconductor quantum dots embedded in micro-pillar cavities are excellent emitters of single photons when pumped resonantly. Often, the same spatial mode is used to both resonantly excite a quantum dot and to collect the emitted single photons, requiring cross-polarization to reduce the uncoupled scattered laser light. This inherently reduces the source brightness to 50 %. Critically, for some quantum applications the total efficiency from generation to detection must be over 50 %. Here, we demonstrate a resonant-excitation approach to creating single photons that is free of any cross-polarization, and in fact any filtering whatsoever. It potentially increases single-photon rates and collection efficiencies, and simplifies operation. This integrated device allows us to resonantly excite single quantum-dot states in several cavities in the plane of the device using connected waveguides, while the cavity-enhanced single-photon fluorescence is directed vertical (off-chip) in a Gaussian mode. We expect this design to be a prototype for larger chip-scale quantum photonics., Comment: 6 pages, 5 figures

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Towards this, we use low-temperature $\textit{in situ}$ electron-beam lithography to deterministically produce hybrid GaAs/Si$_3$N$_4$ photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si$_3$N$_4$ waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of post-selected indistinguishable photons. This indicates a promising path towards significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

Nanobeam optomechanical crystals, in which localized GHz frequency mechanical modes are coupled to wavelength-scale optical modes, are being employed in a variety of experiments across different material platforms. Here, we demonstrate the electrostatic tuning and stabilization of such devices, by integrating a Si$_3$N$_4$ slot-mode optomechanical crystal cavity with a nanoelectromechanical systems (NEMS) element, which controls the displacement of an additional "tuning" beam within the optical near-field of the optomechanical cavity. Under DC operation, tuning of the optical cavity wavelength across several optical linewidths with little degradation of the optical quality factor ($Q\approx10^5$) is observed. The AC response of the tuning mechanism is measured, revealing actuator resonance frequencies in the 10 MHz to 20 MHz range, consistent with the predictions from simulations. Feedback control of the optical mode resonance frequency is demonstrated, and alternative actuator geometries are presented.

The inherent crystal anisotropy of hexagonal boron nitride (hBN) sustains naturally hyperbolic phonon polaritons, i.e. polaritons that can propagate with very large wavevectors within the material volume, thereby enabling optical confinement to exceedingly small dimensions. Indeed, previous research has shown that nanometer-scale truncated nanocone hBN cavities, with deep subwavelength dimensions, support three-dimensionally confined optical modes in the mid-infrared. Due to optical selection rules, only a few of many such modes predicted theoretically have been observed experimentally via far-field reflection and scattering-type scanning near-field optical microscopy. The Photothermal induced resonance (PTIR) technique probes optical and vibrational resonances overcoming weak far-field emission by leveraging an atomic force microscope (AFM) probe to transduce local sample expansion due to light absorption. Here we show that PTIR enables the direct observation of previously unobserved, dark hyperbolic modes of hBN nanostructures. Leveraging these optical modes could yield a new degree of control over the electromagnetic near-field concentration, polarization and angular momentum in nanophotonic applications., Comment: 14 pages with references, 4 figures

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth., Comment: 11 pages, 8 figures

Monolayers of transition metal dichalcogenide materials emerged as a new material class to study excitonic effects in solid state, since they benefit from enormous coulomb correlations between electrons and holes. Especially in WSe2, sharp emission features have been observed at cryogenic temperatures, which act as single photon sources . Tight exciton localization has been assumed to induce an anharmonic excitation spectrum, however, the evidence of the hypothesis, namely the demonstration of a localized biexciton, is elusive. Here, we unambiguously demonstrate the existence of a localized biexciton in a monolayer of WSe2, which triggers an emission cascade of single photons. The biexciton is identified by its time-resolved photoluminescence, superlinearity and distinct polarization in micro-photoluminescence experiments. We evidence the cascaded nature of the emission process in a cross-correlation experiment, which yields a strong bunching behavior. Our work paves the way to a new generation of quantum optics experiments with two-dimensional semiconductors., Comment: 13 pages, 3 Figures

Deterministic techniques enabling the implementation and engineering of bright and coherent solid-state quantum light sources are key for the reliable realization of a next generation of quantum devices. Such a technology, at best, should allow one to significantly scale up the number of implemented devices within a given processing time. In this work, we discuss a possible technology platform for such a scaling procedure, relying on the application of nanoscale quantum dot imaging to the pillar microcavity architecture, which promises to combine very high photon extraction efficiency and indistinguishability. We discuss the alignment technology in detail, and present the optical characterization of a selected device which features a strongly Purcell-enhanced emission output. This device, which yields an extraction efficiency of $\eta=(49\pm4)~\%$, facilitates the emission of photons with $(94\pm2.7)~\%$ indistinguishability., Comment: 8 pages, 5 figures. arXiv admin note: text overlap with arXiv:1512.07453

Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing down to the quantum level. We combine these two in an integration platform that will enable a new class of scalable, efficient and versatile integrated quantum photonic devices

Acoustic wave devices provide a promising chip-scale platform for efficiently coupling radio frequency (RF) and optical fields. Here, we use an integrated piezo-optomechanical circuit platform that exploits both the piezoelectric and photoelastic coupling mechanisms to link 2.4 GHz RF waves to 194 THz (1550 nm) optical waves, through coupling to propagating and localized 2.4 GHz acoustic waves. We demonstrate acousto-optic modulation, resonant in both the optical and mechanical domains, in which waveforms encoded on the RF carrier are mapped to the optical field. We also show opto-acoustic modulation, in which the application of optical pulses gates the transmission of propagating acoustic waves. The time-domain characteristics of this system under both pulsed RF and pulsed optical excitation are considered in the context of the different physical pathways involved in driving the acoustic waves, and modeled through the coupled mode equations of cavity optomechanics., Comment: 8 pages, 6 figures

Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics, biosensing, microfludics, and cavity optomechanics. Their performance depends critically on the exact distribution of optical energy, confined and shaped by the nanoscale device geometry. Near-field optical probes can image this distribution, but the physical probe necessarily perturbs the near field, which is particularly problematic for sensitive high quality factor resonances. We present a new approach to mapping nanophotonic modes that uses a controllably small and local optomechanical perturbation introduced by a focused lithium ion beam. An ion beam (radius about 50 nm) induces a picometer-scale dynamic deformation of the resonator surface, which we detect through a shift in the optical resonance wavelength. We map five modes of a silicon microdisk resonator (Q > 20,000) with both high spatial and spectral resolution. Our technique also enables in-situ observation of ion implantation damage and relaxation dynamics in a silicon lattice., Comment: published online in Nature Photonics

We present a platform based upon silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Utilizing tensile stress and lithographic patterning of a silicon nitride nanomembrane we are able to reliably realize planar capacitors with vacuum gap sizes down to $s \approx 80$nm. In combination with spiral inductor coils of micron pitch, this yields microwave ($\approx 8$GHz) resonant circuits of high impedance ($Z_{0} \approx 3.4$k$\Omega$) suitable for efficient electromechanical coupling to nanoscale acoustic structures. We measure an electromechanical vacuum coupling rate of $g_{0}/2\pi = 41.5$~Hz to the low frequency ($4.48$MHz) global beam motion of a patterned phononic crystal nanobeam, and through parametric microwave driving reach a backaction cooled mechanical mode occupancy as low as $n_{m} = 0.58$., Comment: 21 pages, 9 figures

Optical frequency conversion has applications ranging from tunable light sources to telecommunications-band interfaces for quantum information science. Here, we demonstrate efficient, low-noise frequency conversion on a nanophotonic chip through four-wave-mixing Bragg scattering in compact (footprint < 0.5 x 10^-4 cm^2) Si3N4 microring resonators. We investigate three frequency conversion configurations: (1) spectral translation over a few nanometers within the 980 nm band, (2) upconversion from 1550 nm to 980 nm, and (3) downconversion from 980 nm to 1550 nm. With conversion efficiencies ranging from 25 % for the first process to > 60 % for the last two processes, a signal conversion bandwidth > 1 GHz, < 60 mW of continuous-wave pump power needed, and background noise levels between a few fW and a few pW, these devices are suitable for quantum frequency conversion of single photon states from InAs quantum dots. Simulations based on coupled mode equations and the Lugiato-Lefever equation are used to model device performance, and show quantitative agreement with measurements.

We demonstrate slot-mode optomechanical crystals, a class of device in which photonic and phononic crystal nanobeam resonators separated by a narrow slot are coupled through optomechanical interactions. In these geometries, nanobeam pairs are patterned so that a mechanical breathing mode is confined at the center of one beam, and a high quality factor (Qo>10^5) optical mode is confined in the slot between the beams. Here, we produce slot-mode devices in a stoichiometric Si3N4 platform, with optical modes in the 980 nm band, coupled to breathing mechanical modes at 3.4 GHz, 1.8 GHz, and 400 MHz. We exploit the high Si3N4 tensile stress to achieve slot widths down to 24 nm, which leads to enhanced optomechanical coupling, sufficient for the observation of optomechanical self-oscillations at all studied frequencies. We utilize the slot mode concept to develop multimode optomechanical systems with triple-beam geometries, in which two optical modes are coupled to a single mechanical mode, and two mechanical modes are coupled to a single optical mode. This concept allows great flexibility in the design of multimode chip-scale optomechanical systems with large optomechanical coupling at a wide range of mechanical frequencies.

The interaction of optical and mechanical modes in nanoscale optomechanical systems has been widely studied for applications ranging from sensing to quantum information science. Here, we develop a platform for cavity optomechanical circuits in which localized and interacting 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipulation of the localized mechanical mode either with a radio frequency field through the piezo-electric effect, or optically through the strong photoelastic effect. We use this to demonstrate a novel acoustic wave interference effect, analogous to coherent population trapping in atomic systems, in which the coherent mechanical motion induced by the electrical drive can be completely cancelled out by the optically-driven motion. The ability to manipulate cavity optomechanical systems with equal facility through either photonic or phononic channels enables new device and system architectures for signal transduction between the optical, electrical, and mechanical domains.

Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average position uncertainty < 30 nm (< 10 nm when using a solid immersion lens), which represents an enabling technology for the creation of optimized single quantum dot devices. To that end, we create quantum dot single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton probability (g(2)(0) <1 %), and a significant Purcell enhancement factor (~ 3).

The development of Si$_3$N$_4$ nanobeam optomechanical crystals is reviewed. These structures consist of a 350 nm thick, 700 nm wide doubly-clamped Si$_3$N$_4$ nanobeam that is periodically patterned with an array of air holes to which a defect region is introduced. The periodic patterning simultaneously creates a photonic bandgap for 980 nm band photons and a phononic bandgap for 4 GHz phonons, with the defect region serving to co-localize optical and mechanical modes within their respective bandgaps. These optical and mechanical modes interact dispersively with a coupling rate $g_{0}/2\pi\approx$100 kHz, which describes the shift in cavity mode optical frequency due to the zero-point motion of the mechanical mode. Optical sidebands generated by interaction with the mechanical mode lie outside of the optical cavity linewidth, enabling possible use of this system in applications requiring sideband-resolved operation. Along with a review of the basic device design, fabrication, and measurement procedures, we present new results on improved optical quality factors (up to $4\times10^5$) through optimized lithography, measurements of devices after HF acid surface treatment, and temperature dependent measurements of mechanical damping between 6~K and 300~K. A frequency-mechanical quality factor product $\left(f{\times}Q_m\right)$ as high as $\approx2.6\times10^{13}$ Hz is measured., Comment: Fixed typo in abstract

This chapter describes the basic design, simulation, and fabrication for fully Si integrated, waveguide coupled, optomechanical force and displacement sensors. The approach of full Si integration of all stationary nanophotonic components with mechanically separated movable components creates the opportunity to independently engineer these two parts for a variety of MEMS and NEMS sensing applications that require high precision, high bandwidth, and small footprint. Further integration of actuators for static and dynamic actuation is also possible., Comment: 17 pages, 6 figures. This manuscript will appear as a chapter in the book "Nanocantilever Beams: Modeling, Fabrication and Applications."

We demonstrate sideband-resolved Si$_3$N$_4$ optomechanical crystals supporting $10^5$ quality factor optical modes at 980 nm, coupled to $\approx4$ GHz frequency mechanical modes with quality factors of $\approx3000$. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature and in atmosphere with intracavity photon numbers of the order of $10^4$.

We use photon correlation measurements to study blinking in single, epitaxially-grown self-assembled InAs quantum dots situated in circular Bragg grating and microdisk cavities. The normalized second-order correlation function g(2)(\tau) is studied across eleven orders of magnitude in time, and shows signatures of blinking over timescales ranging from tens of nanoseconds to tens of milliseconds. The g(2)(\tau) data is fit to a multi-level system rate equation model that includes multiple non-radiating (dark) states, from which radiative quantum yields significantly less than 1 are obtained. This behavior is observed even in situations for which a direct histogramming analysis of the emission time-trace data produces inconclusive results.

We describe a chip-scale, telecommunications-band frequency conversion interface designed for low-noise operation at wavelengths desirable for common single photon emitters. Four-wave mixing Bragg scattering in silicon nitride waveguides is used to demonstrate frequency upconversion and downconversion between the 980 nm and 1550 nm wavelength regions, with signal-to-background levels >10 and conversion efficiency of approximately -60 dB at low continuous wave input pump powers (<50 mW). Finite element simulations and the split-step Fourier method indicate that increased input powers of approximately 10 W (produced by amplified nanosecond pulses, for example) will result in a conversion efficiency >25 % in existing geometries. Finally, we present waveguide designs that can be used to connect shorter wavelength (637 nm to 852 nm) quantum emitters with 1550 nm., Comment: Final published version; some modifications in text and figures with respect to original

We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor (Q) of 10^6, and radial breathing mechanical modes with a Q=10^4 and a resonance frequency of 625 MHz, so that the system is in the resolved sideband regime. Placing a strong optical control field on the red (blue) detuned sideband of the optical mode produces coherent interference with a resonant probe beam, inducing a transparency (absorption) window for the probe. This is observed for multiple optical modes of the device, all of which couple to the same mechanical mode, and which can be widely separated in wavelength due to the large bandgap of Si3N4. These properties are exploited to demonstrate frequency upconversion and downconversion of optical signals between the 1300 nm and 980 nm bands with a frequency span of 69.4 THz., Comment: Final published version; significant re-organization of text and figures with respect to original version

We present a design methodology and analysis of a cavity optomechanical system in which a localized GHz frequency mechanical mode of a nanobeam resonator is evanescently coupled to a high quality factor (Q>10^6) optical mode of a separate nanobeam optical cavity. Using separate nanobeams provides flexibility, enabling the independent design and optimization of the optics and mechanics of the system. In addition, the small gap (approx. 25 nm) between the two resonators gives rise to a slot mode effect that enables a large zero-point optomechanical coupling strength to be achieved, with g/2pi > 300 kHz in a Si3N4 system at 980 nm and g/2pi approx. 900 kHz in a Si system at 1550 nm. The fact that large coupling strengths to GHz mechanical oscillators can be achieved in SiN is important, as this material has a broad optical transparency window, which allows operation throughout the visible and near-infrared. As an application of this platform, we consider wide-band optical frequency conversion between 1300 nm and 980 nm, using two optical nanobeam cavities coupled on either side to the breathing mode of a mechanical nanobeam resonator.

Low-noise, tunable wavelength-conversion through non-degenerate four-wave mixing Bragg scattering in SiNx waveguides is experimentally demonstrated. Finite element method simulations of waveguide dispersion are used with the split-step Fourier method to predict device performance, and indicate a strong dependence of the conversion efficiency on phase matching, which is controlled by the waveguide geometry. Two 1550 nm wavelength band pulsed pumps are used to achieve tunable conversion of a 980 nm signal over a range of 5 nm with a peak conversion efficiency of \approx 5 %. The demonstrated Bragg scattering process is suitable for frequency conversion of quantum states of light., Comment: 4 pages, two columns, 3 figures

We demonstrate heralded single photon generation in a CMOS-compatible silicon nanophotonic device. The strong modal confinement and slow group velocity provided by a coupled resonator optical waveguide (CROW) produced a large four-wave-mixing nonlinearity coefficient gamma_eff ~4100 W^-1 m^-1 at telecommunications wavelengths. Spontaneous four-wave-mixing using a degenerate pump beam at 1549.6 nm created photon pairs at 1529.5 nm and 1570.5 nm with a coincidence-to-accidental ratio exceeding 20. A photon correlation measurement of the signal (1529.5 nm) photons heralded by the detection of the idler (1570.5 nm) photons showed antibunching with g^(2)(0) = 0.19 \pm 0.03. The demonstration of a single photon source within a silicon platform holds promise for future integrated quantum photonic circuits.

Bright single photon emission from single quantum dots in suspended circular Bragg grating microcavities is demonstrated. This geometry has been designed to achieve efficient (> 50 %) single photon extraction into a near-Gaussian shaped far-field pattern, modest (~10x) Purcell enhancement of the radiative rate, and a spectral bandwidth of a few nanometers. Measurements of fabricated devices show progress towards these goals, with collection efficiencies as high as ~10% demonstrated with moderate spectral bandwidth and rate enhancement. Photon correlation measurements are performed under above-bandgap excitation (pump wavelength = 780 nm to 820 nm) and confirm the single photon character of the collected emission. While the measured sources are all antibunched and dominantly composed of single photons, the multi-photon probability varies significantly. Devices exhibiting tradeoffs between collection efficiency, Purcell enhancement, and multi-photon probability are explored and the results are interpreted with the help of finite-difference time-domain simulations. Below-bandgap excitation resonant with higher states of the quantum dot and/or cavity (pump wavelength = 860 nm to 900 nm) shows a near-complete suppression of multi-photon events and may circumvent some of the aforementioned tradeoffs., Comment: 11 pages, 12 figures

Hybrid quantum information devices that combine disparate physical systems interacting through photons offer the promise of combining low-loss telecommunications wavelength transmission with high fidelity visible wavelength storage and manipulation. The realization of such systems requires control over the waveform of single photons to achieve spectral and temporal matching. Here, we experimentally demonstrate the simultaneous wavelength translation and amplitude modulation of single photons generated by a quantum dot emitting near 1300 nm with an exponentially-decaying waveform (lifetime $\approx$1.5 ns). Quasi-phase-matched sum-frequency generation with a pulsed 1550 nm laser creates single photons at 710 nm with a controlled amplitude modulation at 350 ps timescales., Comment: 5 pages, 4 figures

Sensitive transduction of the motion of a microscale cantilever is central to many applications in mass, force, magnetic resonance, and displacement sensing. Reducing cantilever size to nanoscale dimensions can improve the bandwidth and sensitivity of techniques like atomic force microscopy, but current optical transduction methods suffer when the cantilever is small compared to the achievable spot size. Here, we demonstrate sensitive optical transduction in a monolithic cavity-optomechanical system in which a sub-picogram silicon cantilever with a sharp probe tip is separated from a microdisk optical resonator by a nanoscale gap. High quality factor (Q ~ 10^5) microdisk optical modes transduce the cantilever's MHz frequency thermally-driven vibrations with a displacement sensitivity of ~ 4.4x10^-16 m\sqrt[2]{Hz} and bandwidth > 1 GHz, and a dynamic range > 10^6 is estimated for a 1 s measurement. Optically-induced stiffening due to the strong optomechanical interaction is observed, and engineering of probe dynamics through cantilever design and electrostatic actuation is illustrated.

We theoretically investigate the interaction of a single quantum dipole with the modes of a fiber-coupled semiconductor waveguide. Through a combination of tight modal confinement and phase-matched evanescent coupling, we predict that approximately 70 % of the dipole's emission can be collected into a single mode optical fiber. Calculations further show that the dipole strongly modifies resonant light transmission through the system, with over an order of magnitude change possible for an appropriate choice of fiber-waveguide coupler geometry.

A technique based on using optical fiber taper waveguides for probing single emitters embedded in thin dielectric membranes is assessed through numerical simulations. For an appropriate membrane geometry, photoluminescence collection efficiencies in excess of 10 % are predicted, exceeding the efficiency of standard free-space collection by an order of magnitude. Our results indicate that these fiber taper waveguides offer excellent prospects for performing efficient spectroscopy of single emitters embedded in thin films, such as a single self-assembled quantum dot in a semiconductor membrane., Comment: Final published version Optics Express Vol. 17, p. 10542 (2009)