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Presents a study that described a model for the behavior of leakage current in the semi-insulating substrate of a gallium arsenide device based on the impact of ionization of deep-level traps. Features of the deep impact ionization model; Analysis of the S-type negative differential conductivity behavior; Examination of the behavior of leakage current in photoexcitable deep traps.

Presents a study which examined the effect of illumination on the tunneling conductance of high-electron-mobility structures. Calculation of the effect of steady illumination on the internal barriers that control access to the conduction channels for electrons passing between source and drain; Calculation of the tunneling conductances at the supply/cap and supply/buffer interfaces; Effects of illumination on the current distribution between parallel channels.

Details a study which described how to incorporate the effects of photoexcitable deep donors into a one-dimensional calculation of the band structure of a unipolar heterostructure in steady illumination. Salient features obtained for three levels of illumination; Effect of absorption coefficient on electron distribution; Dependence of electron distribution on illumination.

Presents information on a study which discussed several features of the direct current properties of illuminated, n-type gallium (Ga) arsenide/aluminum[subx] Ga[sub1-x]arsenide heterostructures that normally are neglected when modeling the parallel conduction. Description of the sample preparation; Calculation outline; Discussion on temperature-dependent parameters.

Part I. Presents a study which measured the Hall carrier concentration n[sub H] and the Hall mobility μ [sub H] (T) for some n-type, silicon-doped gallium arsenic/aluminum [sub x] gallium [sub 1-x] arsenic heterostructures for different levels of continuous illumination by a red light emitting diode. Experimental details; Results and discussion; Field dependence.

Reports an experiment on resonant interband tunneling diodes (RIT) and the measured room temperature peak-to-valley current ratio. Background on RIT; Information on the resonance of interband tunneling; Way in which the room temperature peak-to-valley ratio was obtained.

We demonstrate that deviations from 1/ f noise behavior found in submicron silicon metal-oxide-semiconductor field-effect transistors operating at room temperature are the direct result of the decomposition of the 1/ f spectrum into its constituent Lorentzian components. In the time domain, these devices produce random telegraph signals due to localized and discrete modulations of the channel resistance caused by individual carrier trapping events. [ABSTRACT FROM AUTHOR]

Heterostructure p-n junction tunnel diodes with high peak to valley ratios (12: 1) at room temperature are demonstrated. The variation of peak and valley currents in diodes with different tunnel barriers is described, and the mechanisms responsible for the valley current and its temperature dependence are proposed. Ways to improve the peak to valley ratio and reduce junction capacitance are discussed. [ABSTRACT FROM AUTHOR]

Low-frequency current noise that has a f-3/2 power law noise spectrum is observed in GaAs field-effect devices. We show that this is due to modulation by a thermally activated and bias-independent voltage noise in the gate. We identify this noise with generation recombination associated with the semi-insulating substrate supporting these devices. Lowering the activation energy of these traps by the drain bias causes instability in this noise process, leading to low-frequency oscillations that have previously been identified with high field domains in the substrate material. [ABSTRACT FROM AUTHOR]