1. SiC Vertical JFET Pure Diode-Less Inverter Leg
- Author
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Sebastien Oge, Fabien Dubois, Florent Morel, Xavier Fonteneau, Dominique Bergogne, Hervé Morel, Remy Ouaida, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Thales Microelectronics, and entreprise
- Subjects
Materials science ,Silicon Carbide ,business.industry ,020208 electrical & electronic engineering ,05 social sciences ,[SPI.NRJ]Engineering Sciences [physics]/Electric power ,Electrical engineering ,Vertical JFET ,JFET ,02 engineering and technology ,Thermal conduction ,Threshold voltage ,chemistry.chemical_compound ,Safe operation ,chemistry ,Diode Less ,0202 electrical engineering, electronic engineering, information engineering ,Silicon carbide ,Inverter ,0501 psychology and cognitive sciences ,Inverter Leg ,business ,050107 human factors ,Voltage ,Diode - Abstract
International audience; The aim of this paper is to investigate the ability of a vertical structure JFET to operate in an inverter leg without any internal or external diode. The JFET is characterized to show the reverse conduction capability while the gate-to-source voltage is lower than the threshold voltage. An inverter leg is tested at 540 V /5 A and 50 kHz. A specific test board is implemented to assess a safe operation over a period of time.
- Published
- 2013
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