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In this work, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) which can switch the polarity without program gate (PG). In FeRFETs, the non-volatile and reconfigurable electrostatic doping by ferroelectric enables the type conversion without PG. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (> 1×1021 cm-3), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field (EC) is important to maximize the performance of FeRFETs.

Purpose This paper aims to propose a method for manufacturing multi-material monolithic structures with flexible materials to construct the elastic body by using a dual-nozzle three-dimensional printer to develop a piezoelectric (PZT)-driven micropositioning stage with three degrees of freedom (3-DOF) and flexure hinges. Design/methodology/approach Polylactic acid (PLA) and nylon were used for the lever structure’s frame and flexure hinge, respectively. Additionally, the stage consisted of three PZT actuators for fine movement in the nanometer scale in 3-DOF (x, y and θ-directions). For the design of the stage, the kinematic analysis model and the finite element method (FEM) analysis was undertaken for comparing between PLA with nylon (multi-material), PLA (single material) and aluminum (conventional-material). In addition, two verification experiments were implemented for the fabricated prototype stage. First, to evaluate various assessments (lever ratio, hysteresis, coupling error and resolution), a measurement is carried out using the three capacitive sensors. Then, a two-camera-vision measurement experiment was performed to verify the displacement and lever ratio over the full-scale working range of the fabricated positioning stage, and the results from the experimentation and the FEM analysis were compared. Findings The authors confirmed enhancements in the properties of the lever structure frame, which requires stiffness and of the hinge, which requires flexibility for elastic deformation. Comparing FEM analysis and experimental results, although the performance as shown by experimental results was lower: the maximum difference being 3.4% within the end-point working range; this difference was sufficient to be a plausible alternative for the aluminum-based stage. Originality/value Multi-material monolithic-structure fabrication has an effective advantage in improving the performance of the stage, by using a combination of materials capable of reinforcing the desired characteristics in the necessary parts. It was verified that the fabricated stage can substitute the aluminum-based stage and can achieve a higher performance than single-material stages. Thus, precise-positioning stages can be manufactured in many kinds of structures with various properties and contribute to weight reduction and low costs for application equipment.

Fourier model–based multi-probe-error-separation is an error separation method that is useful for precise measurement of the rotation error motion of spindles or roundness profile of rotating machine parts. However, it is not yet widely used, because it suffers from the critical problem of harmonic distortion. This study explores the phenomenon of harmonic distortion in detail and analytically clarifies the principles behind its occurrence. The position at which harmonic distortion occurs can be calculated exactly and easily using principles related not only to probe arrangement angles, but also to measurement conditions such as data length and undulation range of interest. Based on these principles, we propose multi-probe system design guidelines for the effective selection of probe arrangement angles and avoidance of harmonic distortion. The reliability and usability of the proposed design method are verified by simulation tests; stable multi-probe-error-separation can easily be achieved using the proposed design technique. We conduct experimental tests using a special measuring system based on four probes composed of two different probe arrangement sets and verify that this multi-probe-error-separation method can acquire rotation error motion or roundness profile precisely without harmonic distortion.

In this study, a real-time measurement system to easily apply multi-probe error separation method for error motion measurement of a shaft was designed and developed. An arrangement condition of sensing probes for accurate multi-probe error separation method was examined and verified by a simulation test. By following the examined arrangement condition for multi-probe method, a measurement system to measure radial and tilt error motions of a shaft was designed and developed. The efficiency of the multi-probe method with the examined arrangement condition was checked by comparing the error motion results for a rotary stage with the error motions in the specifications of the guarantee. It is expected to apply this system to a real-time monitoring system of failure diagnosis for rotating shafts in ships and plants.

Tiled display systems are widely utilized for digital signage application exceeding the size of a single flat-panel display. Smoothly varying spatial non-uniformity in luminance and color may cause visible difference in the boundary of two adjacent sub-displays. It is necessary to suppress such visible artifacts. Tiled display systems can be installed under various illumination environments and require routine color calibration to compensate for temporal change in display characteristics. This paper presents a simple and cost-effective color calibration method for tiled display systems. Consumer-level digital camera is utilized as a measuring device after the proposed vignetting correction was applied. Experimental results indicate that the proposed color calibration method for tiled display system is quite effective in suppressing the visible artifacts across two adjacent sub-displays.

This work investigates the areal effect, a smoothing of the surface areal topography in measurements from optical instruments that arises from the use of discrete pixels. Two-dimensional and three-dimensional models for the process of acquiring areal topography data were developed and applied to three-dimensional reference surface textures of various traditional machined surfaces that were measured by an atomic force microscope. Sets of reference surface areal data were stitched by a three-dimensional stitching method prior to their use in simulations. Roughness parameters and cumulative power spectra of areal topography of the specimen surfaces measured by coherence scanning interferometry were calculated and compared to the results from the simulated profiles. The results from the simulated data profiles showed good agreement with profiles measured by a coherence scanning interferometry microscope. Finally, the relationship between the pixel size of the optical instruments and the resulting reliability of the high-frequency components of the acquired surface profiles was investigated with spectral analysis. Selection criteria for the magnification of the objective lens are proposed, which allow determination of the appropriate sensor spatial resolution for measurements based on the surface texture characteristics of the specimen.

In this paper, six-degree-of-freedom (DoF). Displacement measurement technique using a compact stereo-vision system is proposed. The measuring system consists of a camera, an optical prism, two plane mirrors, and a planar marker on a target. The target was attached on an object so that its six-DoF displacement can be calculated using a proposed coordinates estimating algorithm and stereo images of the marker. A prototype was designed and fabricated for performance test. From the test results, it can be confirmed that the proposed measuring technique can be applied to monitoring and control of various manipulators.

A 3D stitching algorithm was developed to measure wide-range data without reducing lateral resolution. This algorithm can correct X- and Y-axis rotational errors and Z-axis translational errors, as well as minimize the propagation of stitching error using an overall squared stitching method. Furthermore, the coordinate relation of adjacent areas is clearly defined to facilitate proper implementation of the algorithm. The developed algorithm has been applied with simulated and actual measured data to verify that it can stitch various types of data. The stitching accuracy on the common stitching area was evaluated using the Monte-Carlo method as the noise level increased to determine the criteria on measuring conditions. The stitching error was validated to be very small and to occur at the sub-nanometer level.

In this research, a five-degree of freedom (5-d.o.f.) stitching method is proposed which is implemented by calculating the 5-d.o.f. relative position and orientation between small areas of 3D profile data acquired with high resolution. The relative position and orientation is calculated from the data of the overlap area for adjacent measured areas by using the least squares method and the cross correlation function. Furthermore, a data synchronizing algorithm is also proposed for the case in which a specimen is measured by different instruments. To verify practical application of the stitching method and the synchronizing algorithm, a multi-probe optical measuring instrument was developed.

We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) field effect transistors (FETs) using mobile protons that are generated by very short time (within 2 minutes) hydrogen neutral beam (H-NB) treatment at room temperature (25 °C). Some researches try to hydrogen insertion process via long time (40 minutes) high-pressure hydrogen annealing (HPHA) at high temperature (400 °C) that also need several steps such as poly silicon deposition, HPHA process, and poly silicon etching process. However our hydrogen insertion process does not need any other additional process but only H-NB process during normal thin film transistor fabrication. Also the whole memory fabrication process kept under 50 °C (except SiO2deposition process; 300 °C). These nc-Si devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We think that the memory characteristics are attributed to the movement of protons between the Si(gate)/SiO2(gate insulator) interface and the SiO2/nc-Si thin film (active layer) interface by the applied gate electric field. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials, and probability of next generation flexible memorable electronics.

In this paper, to release this induced errors and improve the accuracy of the measured data, a new spatial synchronization method is proposed to spatially synchronize the three-dimensional surface data sets obtained by variety surface topography measuring instruments. The proposed spatial synchronization method minimizes the geometrical error components using the data interpolation, the least squares method, and the two-dimensional cross correlation function. For verification of the method, it was applied to the measured data sets measured with a chromatic confocal microscopy, a laser scanning confocal microscopy, and an ellipsometer. Based on the experimental results, the accuracy or the proposed method is analyzed and evaluated.

An atmosphere highly diluted with hydrogen is essential to increase the crystal fraction during formation of hydrogenated nano-crystalline (nc) or micro-crystalline (μc) silicon thin films via chemical vapor deposition (CVD). This hydrogen-rich process, however, hinders the ability for the material to find adequate use in micro-electronic devices due to contamination that results in oxygen-related problems such as donor-like doping, defect creation, or passivation. The use of neutral beam assisted chemical vapor deposition (NBaCVD), with a low hydrogen ratio (R = H2/SiH4) of 4, successfully deposits a highly-crystallized nc-silicon (HC nc-Si) thin film (TF) at near room temperature (

The neutral beam assisted chemical vapor deposition (NBaCVD) system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particle beam. During the deposition process, energetic hydrogen (H) neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (Xc) up to 85%) and dopant activation (~1X1020 #/cm3, ~30 cm2/Vs) with low H ratio at near room temperature on the substrate. The increase of H neutral beam flux induces transition of crystal orientation from [111] to [311] at constant Xc and changes the carrier transport path from “grain boundary path” to “grain-to-grain percolation path” and enhances bulk mobility of the Si thin film. The various analysis data of the thin films (XRD, Raman, temperature dependent conductivity, Hall measurement) represent the evidence of very high doping efficiency at near room temperature, obvious nano-crystalline embedded polymorphous phase, and mixed transport (band and percolation) characteristics.

A 20 mm diameter of small 5-D.O.F. force sensor has been developed for applications in MR-field Optical intensity modulation was adopted for transducing to miniaturize the sensor structure. For its accurate sensing of 5-D.O.F. force/moment, the elastic detecting module was designed to respond independently to each force or moment component. And for small size, two optical transducing modules of 2-D.O.F. and 3-D.O.F. were designed and integrated with the detecting module where optical fibers were arranged in parallel to make the sensor small. It is confirmed by calibration test that the detecting modules deforms linearly and independently to the input force. The results of evaluating test show that the range and resolution of forces are ±4 N and 0.94~7.1 mN and the range and resolution of moments are ±120 N ·mm and 0.023~0.034 N·mm.

In this paper, the distortion effect in measured profiles caused by stylus tip radius size of stylus-typed surface profilometer was analyzed in terms of 2D and 3D. On the basis of our analysis results, we propose selection criteria for the stylus tip radius to improve the reliability of measurement results. For this purpose, a simulation algorithm has been devised and implemented for 2D and 3D measurement simulations, and the 3-dimensional surface texture used in simulation was obtained using an Atomic Force Microscope (AFM) on an actual machined surface to improve the reliability of simulation results. The simulation results are compared with the measured results from the same specimen using a roughness tester, and the validity of analysis via the simulation proposed in this study is confirmed. Cumulative power spectral analysis was performed for the 2D and 3D simulated profiles obtained from simulation. On the basis of the analysis results, an effective frequency components field using a stylus type profilometer is clarified, and the selection criteria of the stylus tip radius for measurement is proposed considering the surface texture characteristics of the specimen. The purpose of this paper is to provide a basis of a simple and effective method which could be an alternative of some engineering standard that specifies selection of stylus tip radius for the measurement using only nominal Rq for machined surface.

This paper presents a low temperature fabrication of amorphous IGZO TFTs (a-IGZO TFTs) via high density CVD and superimposed rf/dc magnetron sputtering below 150 °C Low temperature processed SiO x films were been prepared in high density plasma chemical vapor deposition with inductively-coupled plasma (ICP) source and their electrical properties of these films have been investigated as a function of an ICP power and an O 2 flow rate. Also, we found that a-IGZO semiconductor could be affected by a dc self-bias of a target surface using a superimposed rf/dc magnetron sputtering. Increasing a dc self-bias, higher post-annealing temperature is needed to achieve their electrical characteristics of a-IGZO TFTs. For a low-temperature and high performance a-IGZO TFTs, therefore, it is necessarily considered that a-IGZO semiconductors could be damaged due to accelerated negative oxygen ions during conventional magnetron sputtering.

Using the neutral-beam-assisted chemical vapor deposition (NBaCVD) system [5–12] , an alternative technique that can control the oxygen doping in a silicon-based thin film has been developed. This brand-new technique has the ability to controlling of optical band gaps by micro-control the oxygen dopant concentrates in the nc-Si thin films. This control of the oxygen doping results in self-biasing on the internal antenna of an inductively coupled plasma (ICP) source; it also results in the hydrogen neutral beam (NB) energy being adjusted by the reflector bias. The oxygen atoms are supplied from the sputtering of an internal ICP antenna covered by a quartz tube and are eliminated by the energetic hydrogen NB in the NBaCVD system, rather than by a mass-flow-controller (MFC) used in conventional CVD. These results are observed via Fourier Transform Infrared Spectroscopy, X-ray Photoelectron Spectroscopy, Secondary Ion Mass Spectroscopy and UV–visible data. The result of this experiment allows the fabrication of multi-junction solar cells with gradually varying optical band gaps.

A force/torque sensor using carbon fiber plate was designed and developed to make the sensor be able to measure a wide range of multi degree of force and torque. Using carbon fiber plate of 0.3 mm thickness, the sensor was designed and developed, which has a µN level order of resolution and about 0.01 N ~ 390 N of wide measurement range. The elastic deformation part has a tripod plate structure and strain gauges are attached on the part to detect the force/torque. The coefficient of determination for the sensor is over 0.955 by the calibration experiment so that the linearity of the sensor is confirmed to be good. Also, experiments on applying 0.005 ~ 40 kg (0.05 ~ 390 N) to each axis were implemented and the sensor is proved to be safe under a high load. Finally, to verify the function calculating the direction of load vector, the directions of various load vectors which have the same magnitude but different directions and the directions of the calculated load vectors are compared and analyzed to accord well.

The advantages of the YBCO thin film wire, which is creating expectations as a next-generation superconducting current-limiting element, are its high index value, current density, and convenience when its capacity is increased by increasing its length. In particular, the stabilization layer of the YBCO thin film wire, which determines its abnormal current protection and excitation characteristics, can diversify its applications to superconducting power devices, depending on the specific resistance of the material of its stabilization layer. Thus, an analysis of the excitation characteristics of the YBCO thin film wire according to the material of its stabilization layer and the existence of the stabilization layer is a very important study subject. Accordingly, this study was conducted to evaluate the capabilities of the YBCO thin film wire as a current-limiting element using a YBCO thin film wire with no stabilization layer. For this purpose, the voltage–current characteristics of the YBCO thin film wire immediately after the quenching, according to the size and time of the fault current applied from the voltage source, were analyzed. Additionally, the wire’s resistance-increasing tendency and its tendency to return to its superconducting state immediately after the quenching were examined. The results of this study present the evaluation data for the verification of the phase transition characteristics of the YBCO thin film wire with no stabilization layer and its potential as a superconducting element for the superconducting current limiter.

The effects of argon neutral beam (NB) energy on amorphous carbon (a-C) films were investigated, the a-C films were deposited by a neutral particle beam assisted sputtering (NBAS) system. The energy of the neutral particle beam can be directly controlled by a reflector bias voltage as a unique operating parameter of the system. The results from the analysis by Raman spectra, Fourier transform infrared (FT-IR), UV–visible spectroscopy and electrical conductivity indicate the properties of the amorphous carbon films can be manipulated by simply adjusting the NB energy (or reflector bias voltage) without changing any other process parameters. By increasing the reflector bias voltage, the amount of cross-linked sp 2 clusters as well as the sp 3 bonding in the a-C film coating from the NBAS system can be increased effectively and the composition of carbon thin films can be changed from a nano-crystalline graphite phase to an amorphous carbon phase. In addition, the deposition rate increases with reflector bias voltage due to additional sputtering at the carbon reflector without any variation of physical and electrical properties of the a-C film.

A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer & chemical annealing, and (2) heavier NPB (such as Ar) induces damage & amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, , , , and , to produce Si-N and N-H bond in a-SiNx:H film growth. , , and flow rate fixed at 100, 10, and 10 sccm, flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we makes MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current .

The recent increase in power demand has been pressuring industries to continuously extend or expand power sources and transmission and transformer systems. On the other hand, the equivalent impedance of power systems is decreasing. Accordingly, the fault current magnitude in power systems is increasing. Because of such developments, and the rising need to counter this trend, current-limiting technology has been getting much attention as it can efficiently limit the short-circuit faults and improve power system reliability. For this purpose, studies are being carried out on the superconducting fault current limiter (SFCL). In particular, studies on SFCL where normal-conducting devices are combined, instead of the resistor-type SFCL that depends only on the superconductor, are being continued. The development of the element that is suitable for the superconducting fault current limiter combined with the normal-conducting device is also underway. In this study, YBCO thin-film wires that have and do not have a stainless steel stabilizer layer, which is recently studied as the superconducting current-limiting element, were used as superconducting elements of the flux-lock and transformer-shape SFCL consisting of normal-conducting core and coil. The effect of the difference between the resistance values of the two elements on the current-limiting performance of the flux-lock and trans former-shape current limiter was evaluated. For this purpose, the resistance values trend of the two superconducting elements was examined. The initial operational characteristics were compared in terms of quenching time (Iini, IImi, and Tr) and stability (Vmax).

The analysis of the steady and transient states is very important for the application of the superconducting wire to electric devices. Through many studies, the detailed evaluation technology for BSCCO wire, referred to as “the first-generation superconducting wire,” has been established to some extent. Meanwhile, the detailed analysis of the steady and transient states of YBCO thin-film wire, the second-generation wire that is increasingly being applied to more electric devices, is insufficient. Accordingly, in this study, the quench behavior at a below-critical temperature was evaluated, especially in the flux flow state, using two types of commercial YBCO thin-film wires, to determine the electric devices to which the wire can be applied, and to define its operating conditions. For this, YBCO thin-film wires with copper and stainless-steel stabilizer layers, which were manufactured considering the specific resistance and conductivity of the stabilizer layer, were prepared. The critical currents of the two wires were 85 A and 70 A, respectively, but their critical temperatures were identical at 90 K. The resistance values of both wires increased over time, within the range above the critical temperature, but they were different within the range below the critical temperature, according to the stabilizer layer. This can be an index that clearly represents the conducting and current-limiting characteristics of YBCO thin-film wire. Therefore, in this study, the two wires' current division characteristics were examined within the temperature range of 77 K (at which the liquid nitrogen starts to boil) to 90 K (the critical temperature) to determine which of the two wires was the conduction wire and which was the current-limiting wire. In addition, the conduction region was defined based on the trend of increase resistance below and above the critical temperature.

This study examined the mechanism of performance degradation induced by the plasma sputtering process for the formation of the ITO top anode in inverted top-emitting organic light-emitting diodes (ITOLEDs) with WO3 thin film as the hole injection layer (HIL) and the buffer layer. The degradation is mainly caused by the changes in the physical properties of the WO3 thin film as well as the damages of organic layers, which are caused by the bombardment of energetic particles induced by the plasma sputtering process. The number of oxygen vacancies in the WO3 thin film is increased with the increase of the bombardment energy of energetic particles such as Ar ions, resulting in the decrease in the work function and optical band gap and the dramatic increase in conductivity. Above all, the increase in the energy potential difference between WO3 HIL and NPB HTL, which was attributed to the reduced work function of the WO3 HIL, reduces the efficiency of carrier injection and dominantly affects the device performance. These results show that the plasma damage effect, induced by the sputtering process for ITO deposition, could not be effectively removed, even when the metal oxide thin film is used as the buffer layer in ITOLEDs.

The ongoing Superconducting Fault Current Limiter(SFCL) development mainly has focused on the application of commercializaton and power system through combining with normal-conducting device, moving away from current-limiting method, which is solely dependant on the existing superconductor. Compared to the structural development above, on the other hand, the research on applying superconducting current-limiting element to SFCL, the heart of SFCL, still has a lot left to do, apart form traditional resistive type SFCL. In this study, we looked into the current limiting characteristic of SFCL using core and coil. YBCO coated conductor with stainless steel stabilizer layer was verified by the excellent of current-limiting element of the resistive type SFCL that has a high Jc and index as well as being superior in mechanical property. Also, we study temperature characteristics and resistance characteristics, max voltage, response time and current-limiting ability that can be an indicator as current-limiting element while applying to superconducting current-limiting element caused by variation of winding direction, winding ratio of SFCL using core and coil.

The YBCO thin-film wire has a high index value and a fast phase transition speed when a fault current is applied to it. Its critical properties are also superior to those of the existing Bi–Sr–Ca–O wire. Moreover, it can choose its stabilizing layers and control the magnitude of the resistance it generates in with the specific-resistance of the stabilizing layers. Thus, many researchers are studying the application of the Y–Ba–Cu–O(YBCO) thin-film wire to superconducting power machines. Being particularly studied are the properties of the YBCO thin-film wire as a current-limiting element material. In this study, to evaluate the basic properties of superconducting current-limiting elements that contain insulating layers, test samples were manufactured using the YBCO thin-film wire according to the absence and presence as well as the thickness of the insulating layers. Then a fault current was applied to the test samples to examine their quenching resistance trends and operational properties according to the fault angles. Towards those ends, a current was applied to various YBCO thin-film wires with different stabilizing layers to test their properties, and the YBCO thin-film wire that exhibited superior current-limiting performance was selected. Also, a fault current was applied to the selected YBCO thin-film wire with insulating layers to test their properties. Using the test results, the resistance occurrence trends were examined at the critical temperature of 90 K, the perfect quenching temperature of 250 K, and the middle temperature of 180 K. Also, to increase the current limiters’ capacity, the element’s operational properties, such as its maximum voltage, maximum current, initial limited current, and response time were observed at 90 K, 180 K, and 250 K according to the fault angles.

Compared with the first-generation BSCCO wire, the YBCO thin-film wire boasts low material costs and high J c and superior magnetic-field properties, among other strengths. Meanwhile, the previous BSCCO wire material for superconducting cables has been researched on considerably with regard to its post-wire quenching characteristics during the application of an alternating over-current. In this regard, the promising YBCO thin-film wire has yet to be further researched on. Moreover, still lacking is research on the YBCO thin-film wire with insulating layers, which is essential in the manufacture of superconducting cables, along with the testing of the application of an alternating over-current to the wire. In this study, YBCO thin-film wires with copper-stabilizing layers were used in testing alternating over-current application according to the presence or absence of insulating layers and to the thickness of such layers, to examine the post-quenching wire resistance increase and quenching trends. The YBCO thin-film wire with copper-stabilizing layers has a critical temperature of 90 K and a critical current of 85 A rms . Moreover, its current application cycle is 5.5 cycles, and its applied currents are 354, 517, 712, and 915 A peak . These figures enabled the YBCO thin-film wires with copper-stabilizing layers to reach 90, 180, 250, and 300 K, respectively, in this study. These temperatures serve as a relative reference to examine the post-quenching wire properties following the application of an alternating over-current.

The improved flux-lock type superconducting fault current limiter (SFCL) is composed of a series transformer and superconducting unit of the yttrium-barium-copper-oxide (YBCO) coated conductor. In this paper, we investigated current limiting characteristics through winding direction of coil 2 and variable number of coil 1 and coil 2 in improved flux-lock type SFCL. The better fault current characteristics and the burden of YBCO coated conductor can be confirmed from the experimental result in the higher turn ratio of coil 1 and coil 2 in the additive conditions. In case of subtractive condition, we can confirm a similar result in the same case of experimental conditions. but the burden of YBCO coated conductor has been increased from an increase in winding numbers of coil 2.

The most important thing in developing a superconducting fault current limiter (SFCL) is to find the maximum operating condition for each current-limiting element to increase its SFCL capacity. The maximum operating condition can be defined using Vmax, Tr, Imax and Iq, which are detected after the quenching of the SFCL. In this study, YBCO coated conductor whose characteristics were proved as the superconducting fault current limiting element was used to test the operating characteristics of the unit current limiting element and to find the maximum operating condition using Vmax, Tr, Imax and Iq, which are detected after the quenching against the fault current according to the fault angle. YBCO coated conductors used in the test are one wire with stainless-steel stabilizing layer and one wire with no stabilizing layer. Critical current value is 70 Arms and the critical temperature is 90 K. The YBCO coated conductor with non stabilizing layer had a critical current of 80 Arms and a critical temperature of 90 K. Therefore, the two YBCO coated conductors in this study had different critical currents and an identical critical current of 90 K.

YBCO coated conductor is named by second generation superconductor tapes. It is different with first generation superconductor tapes. YBCO coated conductor`s specific difference with Bi-2223/Ag tape is more strong mechanical durability. This is important role to apply to superconducting machines. For mechanical transforming of YBCO coated conductors, we are using the well designed former. The merit of transformation is several. First, we vary the superconducting characteristics according to mechanical stress. Second, we reduce the volume of superconductor, so we achieve reducing the volume of superconducting machines. On this study, we experiment the transporting current characteristics of one types YBCO coated conductor. YBCO coated conductor with Ie of 70 A and voltage grade of 0.6 V/cm were connected to spiral former to conduct current application test.

The YBCO coated conductor is an important element that forms the superconducting power equipment. The first advantage of applying YBCO coated conductor to superconducting power equipment is that it can effectively addresses the normal and fault currents using less quantity of wire than when using Bi tape due to its high critical current density. Second, it can limit the fault current fast because its index value is high. so that the resistance can be produced fast when it is applied to the superconducting current limiting element. Third, the type of stabilization layer that surrounds the YBCO superconductor is selectable and the magnitude of the resistance that is produced from quenching can be adjusted. This study researched into the manufacture of current-limiting element of using YBCO coated conductor, into the characteristics of current limiter that considered by combining the manufactured element with the resistive-type superconducting fault current limiter.

We investigate the comparison of fault current characteristics between the separates three-phase flux-lock type superconducting fault current limiter(SFCL) and integrated three-phase flux-lock type superconducting fault current limiter(SFCL). The single-phase flux-lock type SFCL consists of two coils. The primary coil is wound in parallel to the secondary coil on an iron core and superconducting elements are connected to secondary coil in series. Superconducting elements are used by the YBCO coated conductor. The separated three-phase flux-lock type SFCL consists of single-phase flux-phase type SFCL in each phase. But the integrated three-phase flux-lock type SFCL consists of three-phase flux-reactors wound on an iron core. Flux-reactor consists of the same turn`s ratio between coil 1 and coil 2 for each single phase. To compare the current limiting characteristics of the separated three-phase flux-lock type SFCL and integrated three-phase flux-lock type SFCL, the short circuit experiments are carried out fault condition such as the single line-to-ground fault. The experimental result shows that fault current limiting characteristic of the separated three-phase flux-lock type SFCL was better than integrated three-phase flux-lock type SFCL. And the integrated three-phase flux-lock type SFCL has an effect on sound phase.

The separated three-phase flux-coupling type superconducting fault current limiter(SFCL) is composed of a series transformer and superconducting unit of the YBCO coated conductor. The primary and secondary coils in the transformer were wound in series each other through an iron core and the YBCO coated conductor was connected with secondary coil in parallel. In this paper, we investigated the current limiting characteristics through winding number of coil 2 and winding direction in the flux-coupling type SFCL. Through the analysis, it was shown that additive polarity condition and lower winding number of coil 2 have advantaged from the point of view of fault current limiting and burned of YBCO coated conductor.

We investigated the fault current characteristics of the separates three-phase flux-lock type superconducting fault current limiter(SFCL) according to the variation of inductances. The single-phase flux-lock type SFCL consists of two coils. The primary coil is wound in parallel to the secondary coil on an iron core. And superconductor is series connected on secondary coil. Superconductor is using the YBCO coated conductor. The separated three-phase flux-lock type SFCL consists of single-phase flux-phase type SFCL in each phase. To analyze the current limiting characteristics of a three-phase flux-lock type SFCL, the short circuit experiments were carried out fault such as the triple line-to-ground fault. The experimental result shows that fault current limiting characteristics of additive polarity winding was better than subtractive polarity winding and when the inductances of coil 2 was lower, resistances of YBCO CC was more generated.

The essential characteristic of ubiquitous is context-awareness, and that means ubiquitous computing can automatically process the data that change according to space and time, without users` intervention. However, in circumstance of context awareness, since location information is able to be collected without users` clear approval, users cannot control their location information completely. These problems can cause privacy issue when users access their location information. Therefore, it is important to construct the location information system, which decides to release the information considering privacy under the condition such as location, users` situation, and people who demand information. Therefore, in order to intercept an outflow information and provide securely location-based information, this paper suggests a new system based CS-RBAC with the existing LBS, which responds sensitively as customer`s situation. Moreover, it accommodates a merit of PCP reflecting user`s preference constructively. Also, through privacy weight, it makes information not only decide to providing information, but endow `grade`. By this method, users` data can be protected safely with foundation of `Role` in context-aware circumstance.

The NBaCVD system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particles. During the deposition process, energetic H-neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (Xc) ~85%) and dopant activation (~1*1020 #/cm3, ~30 cm2/Vs) with low H ratio at near room temperature on the substrate. Also the increase of H enhance transport path (mobility incensement) which is deduced from transition of crystal orientation from [111] to [311] at constant Xc. The various analysis data of the thin films (CAFM, GIWAXS) represent the evidence of obvious flat-type nc embedded pm phase, and grain dominant charge transport characteristics.

The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffer from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process. In this study, we have studied the gate bias instability and their density of states (DOSs) of a-IGZO TFTs as depending on the bombardment of NOIs during conventional magnetron sputtering. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the instability of a-IGZO TFTs by this new deposition method. 1. M.G. Kim, M.G. Kanatzidis, A. Facchetti, and T.J. Marks, Nat. Mater. 10, 382 (2011). 2. K.K. Banger, Y. Yamashita, K. Mori, R.L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, Nat. Mater. 10, 45 (2011). 3. M.D.H. Chowdhury, P. Migliorato, and J. Jang, Appl. Phys. Lett. 98, 153511 (2011). 4. X. Xiao, W. Deng, S. Chi, Y. Shao, X. He, L. Wang, and S. Zhang, IEEE Trans. Electron Devices 60, 4159 (2013). 5. D.H. Kim, J.N. Jang, S.B. Yoon, and MunPyo Hong, Appl. Phys. Express 7, 031401 (2014).

Solar cells with multi-junction structures employing various band gap layers are nowadays issue to achieve higher efficiency. We have prepared neutral beam assisted CVD (NBaCVD) deposited a-Si:H which has different oxygen contents as reflector bias and termination capacitor. The oxygen supplied by sputtering of quartz tube(shied for internal ICP antenna) as control of self bias. To control self sputtering of quartz we attached optimized valued capacitor between ends of antenna and ground. As increase of reflector bias directly related the energy of hydrogen, which is reflected from reflector, is increase then the oxygen contents reduced and transform the film structure as amorphous to nano-crystalline. The FTIR, XPS, optical band gap show the changes of oxygen and a-Si:H state as effect of energetic hydrogen reaction with oxygen and Si x -H y bond.

To apply the superconducting wire to power machines, it is necessary to conduct research on the characteristics of wire phase changes in connection with insulating layers. In this study, according to the presence or absence of insulating layers in the wire, and to the thickness of such layers, the wire's resistance increase trends and the characteristics of its recovery from quenching were examined by current-applied cycle at the temperatures of 90 K, 180 K and 250 K. Towards this end, YBCO thin-film wires that have the same critical temperatures and that have copper and stainless-steel stabilizing layers were prepared. One level and three and five levels of superior-performance polyimide pressure-sensitive adhesive tape was attached to the wires at a very low temperature. The eight prepared test samples were wound around the linear frames, then the wire's voltage and current created owing to the phase change characteristics were measured at each prescribed temperature, using the four-point probe method. Further, near the examination temperatures of 90 K, 180 K and 250 K the wire's resistance and recovery characteristics were examined by cycle.

C4.5 is a classification algorithm, an improved version of ID3. C4.5 is fast and deduces good result by constructing a decision tree on the problem of classification. Therefore C4.5 plays an important role in the field of classifier learning systems. This paper proposes two methods based on the decision tree for solving a classification problem. We construct the decision tree by using the measure of C4.5. First, an extended data expression of the existing C4.5 is described. Second, UChoo, a method of generating a rule from the previously made decision tree of C4.5 by using the extended data expression, is described. The rules expressed in the newly proposed method have almost the same information content as the original data set. This is quite an important result, as the size of the instance set will become usually large as the ubiquitous computation environment develops. It is not possible to keep all the individual instance data in memory. Instead, using the proposed method, large amount of data reduction can be done without losing information content.

We have investigated the effect of hydrogen neutral beam(H-NB) on the nano-crystalline silicon (nc-Si) thin films using the neutral beam assisted chemical vapor deposition (NBaCVD) system. In traditional hydrogenated silicon deposition, the gas mixture ratio of hydrogen and silane (SiH4) controls the phase of the thin films, including that from hydrogenated amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si). However, poor migration of deposition precursor and the absence of nucleation sites cause silicon background to be amorphous in the early stage of growth. Conversely, The NBaCVD technology controls the energy of neutral particles (mainly hydrogen atoms) in the range of 0-300 eV to enhance the crystallinity during thin film deposition at low temperature (2 Halogen Lamp) condition, while the field effect mobility was up to 3.2 cm2/Vs: threshold voltage shift was smaller than 1 V after 104sec under the PBIS conditions.